US4465750A
Expired / Lapsed
US
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Photoconductive member with a -Si having two layer regions
Assignee: Canon Inc
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Filing: 1982-12-13
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Granted: 1984-08-14
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Expires: 2002-12-13
Abstract
Abstract A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region composed of SiaC1-a (0.4<a<1), [SibC1-b]cH1-c (0.5<b<1, 0.6</=c<1), [SidC1-d]eX1-e (0.47<d<1, 0.8</=e<1, X: halogen) or [SifC1-f]g(H+X)1-g (0.47<f<1, 0.8</=g<1, X: halogen].
Inventors
- 👤 Kyosuke Ogawa
- 👤 Shigeru Shirai
- 👤 Junichiro Kanbe
- 👤 Keishi Saitoh
- 👤 Yoichi Osato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:59
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
178 words
A photoconductive member which comprises a support for a photoconductive member and an amorphous layer overlying the support and comprising a first layer region and a second layer region, the first layer region being composed of an amorphous material containing silicon atoms as a matrix at least one of hydrogen atoms or halogen atoms, exhibiting photoconductivity, and containing a p-type impurity or an n-type impurity such that the impurity is distributed nonuniformly and continuously in the direction of the layer thickness and substantially uniformly in the direction substantially parallel to the layer surface, and the second layer region being composed of a member selected from the group consisting of an amorphous material of the formula, Si a C 1-a (0.4<a<1), an amorphous material of the formula, [Si b C 1-b ] c H 1-c (0.5<b<1, 0.6≦c<1), an amorphous material of the formula, [Si d C 1-d ] e X 1-e (0.47<d<1, 0.8≦e<1, X is a halogen atom), and an amorphous material of the formula, [Si f C 1-f ] g (H+X) 1-g (0.47<f<1,0.8≦g<1, X is a halogen atom).
Claim 2
Dependent Claim
178 words
A photoconductive member which comprises a support for a photoconductive member and an amorphous layer overlying the support and comprising a first layer region and a second layer region, the first layer region being composed of an amorphous material containing silicon atoms as a matrix at least one of hydrogen atoms or halogen atoms, exhibiting photoconductivity, and containing a p-type impurity or an n-type impurity such that the impurity is distributed nonuniformly and continuously in the direction of the layer thickness and substantially uniformly in the direction substantially parallel to the layer surface, and the second layer region being composed of a member selected from the group consisting of an amorphous material of the formula, Si a C 1-a (0.4<a<1), an amorphous material of the formula, [Si b C 1-b ] c H 1-c (0.5<b<1, 0.6≦c<1), an amorphous material of the formula, [Si d C 1-d ] e X 1-e (0.47<d<1, 0.8≦e<1, X is a halogen atom), and an amorphous material of the formula, [Si f C 1-f ] g (H+X) 1-g (0.47<f<1,0.8≦g<1, X is a halogen atom).
Claim 3
Dependent Claim
38 words
A photoconductive member according to claim 1 in which the impurity is distributed in the first layer region such that the content of the impurity continuously decreases from the support side to the side opposite to the support.
Claim 4
Dependent Claim
21 words
A photoconductive member according to claim 1 in which the impurity is distributed in a higher content at the support side.
Claim 5
Dependent Claim
27 words
A photoconductive member according to claim 1 in which the region of a high impurity content is present within a distance of 5 microns from the support.
Claim 6
Dependent Claim
17 words
A photoconductive member according to claim 1 in which the first layer region contains a p-type impurity.
Claim 7
Dependent Claim
24 words
A photoconductive member according to claim 5 in which the p-type impurity is an atom selected from the group III of the periodic table.
Claim 8
Dependent Claim
18 words
A photoconductive member according to claim 6 in whcih the atom is B, Al, Ga, In, or Tl.
Claim 9
Dependent Claim
17 words
A photoconductive member according to claim 1 in which the first layer region contains an n-type impurity.
Claim 10
Dependent Claim
24 words
A photoconductive member according to claim 8 in which the n-type impurity is an atom selected from the group V of the periodic table.
Claim 11
Dependent Claim
18 words
A photoconductive member according to claim 9 in which the atom is N, P, As, Sb or Bi.
Claim 12
Dependent Claim
27 words
A photoconductive member according to claim 5 in which the content of the p-type impurity in the first layer region is 3×10 4 atomic ppm or less.
Claim 13
Dependent Claim
27 words
A photoconductive member according to claim 8 in which the content of the n-type impurity in the first layer region is 5×10 3 atomic ppm or less.
Claim 14
Dependent Claim
16 words
A photoconductive member according to claim 1 in which the first layer region contains hydrogen atom.
Claim 15
Dependent Claim
23 words
A photoconductive member according to claim 13 in which the content of hydrogen atom in the first layer region is 1-40 atomic %.
Claim 16
Dependent Claim
16 words
A photoconductive member according to claim 1 in which the first layer region contains halogen atom.
Claim 17
Dependent Claim
23 words
A photoconductive member according to claim 15 in which the content of halogen atom in the first layer region is 1-40 atomic %.
Claim 18
Dependent Claim
19 words
A photoconductive member according to claim 1 in which the first layer region contains hydrogen atom and halogen atom.
Claim 19
Dependent Claim
26 words
A photoconductive member according to claim 17 in which the total content of hydrogen atom and halogen in the first layer region is 1-40 atomic %.
Claim 20
Dependent Claim
17 words
A photoconductive member according to claim 1 in which the second layer region is 0.01-10 microns thick.
Claim 21
Dependent Claim
16 words
A photoconductive member according to claim 1 in which the amorphous layer is 3-100 microns thick.
Claim 22
Dependent Claim
17 words
A photoconductive member according to claim 1, in which the support is in a belt like form.
Claim 23
Dependent Claim
16 words
A photoconductive member according to claim 1, in which the support is in a cylindrical form.
Claim 24
Dependent Claim
22 words
A photoconductive member according to claim 1, in which the support is a synthetic resin film provided with electroconductivity at the surface.
Claim 25
Dependent Claim
19 words
A photoconductive member according to claim 1, in which the layer thickness of the first layer region is 1-100μ.
Claim 26
Dependent Claim
25 words
A photoconductive member according to claim 1, in which the layer region containing the impurity occupies the whole layer region of the first layer region.
Claim 27
Dependent Claim
23 words
A photoconductive member according to claim 1, in which the layer region containing the impurity occupies a part of the first layer region.
Claim 28
Dependent Claim
30 words
A photoconductive member according to claim 1, in which the layer region containing the impurity is provided in the end portion of the first layer region on the support side.
Claim 29
Dependent Claim
41 words
A photoconductive member according to claim 1, in which the concentration distribution line of the impurity in the direction of layer thickness has a distribution region in which the concentration is continuously decreased from the support side toward the layer surface.
Claim 30
Dependent Claim
33 words
A photoconductive member according to claim 1, in which the layer region containing the impurity has a localized region containing the impurity at higher concentration in the end portion on the support side.
Claim 31
Dependent Claim
25 words
A photoconductive member according to clain 29, in which the maximum of concentration distribution of the impurity, C max is 50 atomic ppm or more.
Claim 32
Dependent Claim
25 words
A photoconductive member according to clain 29, in which the maximum of concentration distribution of the impurity, C max is 50 atomic ppm or more.
Claim 33
Dependent Claim
26 words
A photoconductive member according to claim 30, in which the maximum C max exist at a depth within 5μ of layer thickness from the support side.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-14 | 1988-02-13 | 1988-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-14 | 1992-02-13 | 1992-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-14 | 1996-02-13 | 1996-08-14 | $7700.00 | Window Closed / Lapsed |