Method of producing a walled emitter semiconductor device

Abstract

Abstract A method of producing a bipolar type semiconductor device including the steps of: forming an insulating layer, consisting of an oxide film of the semiconductor substrate or a separate layer on a silicon semiconductor substrate or layer having a first conductivity type; forming a polycrystalline semiconductor layer on the insulating layer; forming a mask layer on the polycrystalline semiconductor layer; forming a first base region on the semiconductor substrate or layer by introducing an impurity of a second conductivity type, through the polycrystalline semiconductor layer; removing the polycrystalline semiconductor layer under the mask layer; forming an aperture on the insulating layer with the remaining polycrystalline semiconductor layer, or its oxide film, used as a mask; a second base region, which is placed in contact with the first base region, by introducing a second conductivity type impurity into the semiconductor substrate or layer through the aperture; and forming a first conductivity type emitter region within the second base region through the aperture.

Inventors

• 👤 Hiroshi Goto

Bibliographic Details