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US4464587A Expired / Lapsed US ⏱️ 0.0 years remaining

Complementary IGFET Schmitt trigger logic circuit having a variable bias voltage logic gate section

Assignee: Toshiba Corp
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Filing: 1981-08-24
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Granted: 1984-08-07
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Expires: 2001-08-24
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Abstract

Abstract A logic gate section of a Schmitt trigger circuit has first and second nodes to which variable bias voltages are applied. A first bias control IGFET is connected between the first node and a first potential terminal. A second bias control IGFET is connected between the first node and a second potential terminal. A third bias control IGFET is connected between the second node and the first potential terminal. A fourth bias control IGFET is connected between the second node and the second potential terminal. A control signal to the gates of the first and fourth bias control IGFET's is provided by the Schmitt trigger input signal and the control signal to each of the gates of the third and fourth bias control IGFET's is provided by the Schmitt trigger feedback connection of two series-connected inverters.

Inventors

  • 👤 Yasoji Suzuki
  • 👤 Kenji Matsuo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 01:03
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/353; H03K3/356; H03K3/3565

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 285 words
A logic circuit with a variable bias voltage logic gate section, said logic circuit comprising: an inverter which includes a first IGFET of a first conductivity type and a second IGFET of a second conductivity type each having a source, drain and gate, with said drains of said first and second IGFET's being coupled together to form an output terminal of said inverter and said gates of said first and second IGFET's being coupled together to form an input terminal of said inverter; an output terminal for said logic circuit; first and second load inverters connected in series between said output terminal of said inverter and said output terminal of said logic circuit; first and second power terminals; a first bias control IGFET of said first conductivity type which has a source-drain path connected between the source of said first IGFET and said first power terminal, and which has a gate connected to said input terminal of said inverter; a second bias control IGFET of said first conductivity type which has a source-drain path connected between said source of said first IGFET and said second power terminal, and which has a gate connected to the output of said second load inverter; a third bias control IGFET of said second conductivity type which has a source-drain path connected between the source of said second IGFET and said first power terminal, and which has a gate connected to said output of said second load inverter; and a fourth bias control IGFET of said second conductivity type which has a source-drain path connected between said source of said second IGFET and said second power terminal, and which has a gate connected to said input terminal of said inverter.
Claim 2
Dependent Claim 285 words
A logic circuit with a variable bias voltage logic gate section, said logic circuit comprising: an inverter which includes a first IGFET of a first conductivity type and a second IGFET of a second conductivity type each having a source, drain and gate, with said drains of said first and second IGFET's being coupled together to form an output terminal of said inverter and said gates of said first and second IGFET's being coupled together to form an input terminal of said inverter; an output terminal for said logic circuit; first and second load inverters connected in series between said output terminal of said inverter and said output terminal of said logic circuit; first and second power terminals; a first bias control IGFET of said first conductivity type which has a source-drain path connected between the source of said first IGFET and said first power terminal, and which has a gate connected to said input terminal of said inverter; a second bias control IGFET of said first conductivity type which has a source-drain path connected between said source of said first IGFET and said second power terminal, and which has a gate connected to the output of said second load inverter; a third bias control IGFET of said second conductivity type which has a source-drain path connected between the source of said second IGFET and said first power terminal, and which has a gate connected to said output of said second load inverter; and a fourth bias control IGFET of said second conductivity type which has a source-drain path connected between said source of said second IGFET and said second power terminal, and which has a gate connected to said input terminal of said inverter.

References Cited (Backward Citations)

US3524077A Cited
US3737673A Cited
US3769523A Cited
US3651342A Cited
US3873856A Cited
US3914702A Cited
US3904888A Cited
US3984703A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-08-07 1988-02-06 1988-08-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-08-07 1992-02-06 1992-08-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-08-07 1996-02-06 1996-08-07 $7700.00 Window Closed / Lapsed

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