Patent US4464415A successfully refreshed from Google Patents.
US4464415A
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Photoelectric conversion semiconductor manufacturing method
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1982-03-01
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Granted: 1984-08-07
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Expires: 2002-03-01
Abstract
Abstract A semi-amporphous, photoelectric conversion semiconductor manufacturing method in which substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas is introduced into the reaction chamber. An electromagnetic field is applied to the gas mixture to ionize it into a gas mixture plasma in the reaction chamber. The plasma is passed to the substrates where the semiconductor material doped with the neutralizer is deposited on each substrate. The semiconductor material deposited on each substrate becomes a semi-amporphous, photoelectric conversion semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than the temperature at which the semiconductor material on the substrate becomes crystallized.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:19
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F71/00; H10F71/10; H10F71/103; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
218 words
A photoelectric conversion semiconductor manufacturing method which employs a reaction chamber provided with a gas inlet, a gas ionizing region, a semiconductor depositing region and a gas outlet arranged in the foregoing order; comprising the steps of disposing a substrate in the semiconductor depositing region of the reaction chamber, and introducing a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas containing helium and/or neon into the gas ionizing region of the reaction chamber through the gas inlet thereof; applying, in the gas ionizing region of the reaction chamber, an ionizing, high-frequency electromagnetic field to the gas mixture to ionize it into a gas mixture plasma; passing the gas mixture plasma into the semiconductor depositing region of the reaction chamber; depositing the semiconductor material on the substrate from the gas mixture plasma passed into the semiconductor depositing region where the atmospheric pressure in the reactioan chamber is held below 1 atm and the temperature of the substrate is maintained lower than the crystallizing temperature of the deposited semiconductor material to thereby form a photoelectric conversion semiconductor which comprises a mixture of a microcrystalline semiconductor material and a non-crystalline semiconductor material and which is doped with the dangling bond neutralizer; and exhausting the unused gas through the gas outlet.
Claim 2
Dependent Claim
218 words
A photoelectric conversion semiconductor manufacturing method which employs a reaction chamber provided with a gas inlet, a gas ionizing region, a semiconductor depositing region and a gas outlet arranged in the foregoing order; comprising the steps of disposing a substrate in the semiconductor depositing region of the reaction chamber, and introducing a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas containing helium and/or neon into the gas ionizing region of the reaction chamber through the gas inlet thereof; applying, in the gas ionizing region of the reaction chamber, an ionizing, high-frequency electromagnetic field to the gas mixture to ionize it into a gas mixture plasma; passing the gas mixture plasma into the semiconductor depositing region of the reaction chamber; depositing the semiconductor material on the substrate from the gas mixture plasma passed into the semiconductor depositing region where the atmospheric pressure in the reactioan chamber is held below 1 atm and the temperature of the substrate is maintained lower than the crystallizing temperature of the deposited semiconductor material to thereby form a photoelectric conversion semiconductor which comprises a mixture of a microcrystalline semiconductor material and a non-crystalline semiconductor material and which is doped with the dangling bond neutralizer; and exhausting the unused gas through the gas outlet.
Claim 3
Dependent Claim
23 words
A photoelectric conversion semiconductor manufacturing method according to claim 1, wherein the temperature of the substrate is maintained at 700° C. or lower.
Claim 4
Dependent Claim
40 words
A photoelectric conversion semiconductor manufacturing method according to claim 1, wherein the gas mixture contains an impurity imparting N type conductivity to the photoelectric conversion semiconductor to thereby form the photoelectric conversion semiconductor as an N type, photoelectric conversion semiconductor.
Claim 5
Dependent Claim
41 words
A photoelectric conversion semiconductor manufacturing method according to claim 1, wherein the gas mixture contains an impurity imparting a P type conductivity to the photoelectric conversion semiconductor to thereby form the photoelectric conversion semiconductor as a P type, photoelectric conversion semiconductor.
Claim 6
Dependent Claim
43 words
A photoelectric conversion semiconductor manufacturing method according to claim 1, wherein the semiconductor material gas contained in the gas mixture consists principally of a silicon compound gas to thereby form the photoelectric conversion semiconductor as a photoelectric conversion semiconductor consisting principally of silicon.
Claim 7
Dependent Claim
222 words
A photoelectric conversion semiconductor manufacturing method which employs a reaction chamber provided with a gas inlet, a gas ionizing region, a semiconductor depositing region and a gas outlet arranged in the foregoing order; comprising the steps of disposing a substrate in the semiconductor depositing region of the reaction chamber, and intruducing a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas containing helium and/or neon into the gas ionizing region of the reaction chamber through the gas inlet thereof; applying, in the gas ionizing region of the reaction chamber, an ionizing, high-frequency electromagnetic field to the gas mixture to ionize it into a gas mixture plasma; passing the gas mixture plasma into the semiconductor depositing region of the reaction chamber; depositing the semiconductor material on the substrate from the gas mixture plasma passed into the semiconductor depositing region where the atmospheric pressure in the reaction chamber is held below 1 atm and the temperature of the substrate is maintained lower than the crystallizing temperature of the deposited semiconductor material to thereby form a photoelectric conversion semiconductor which comprises a mixture of a microcrystalline semiconductor material having a lattice strain and a non-crystalline semiconductor material and which is doped with the dangling bond neutralizer; and exhausting the unused gas through the gas outlet.
Claim 8
Dependent Claim
222 words
A photoelectric conversion semiconductor manufacturing method which employs a reaction chamber provided with a gas inlet, a gas ionizing region, a semiconductor depositing region and a gas outlet arranged in the foregoing order; comprising the steps of disposing a substrate in the semiconductor depositing region of the reaction chamber, and intruducing a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas containing helium and/or neon into the gas ionizing region of the reaction chamber through the gas inlet thereof; applying, in the gas ionizing region of the reaction chamber, an ionizing, high-frequency electromagnetic field to the gas mixture to ionize it into a gas mixture plasma; passing the gas mixture plasma into the semiconductor depositing region of the reaction chamber; depositing the semiconductor material on the substrate from the gas mixture plasma passed into the semiconductor depositing region where the atmospheric pressure in the reaction chamber is held below 1 atm and the temperature of the substrate is maintained lower than the crystallizing temperature of the deposited semiconductor material to thereby form a photoelectric conversion semiconductor which comprises a mixture of a microcrystalline semiconductor material having a lattice strain and a non-crystalline semiconductor material and which is doped with the dangling bond neutralizer; and exhausting the unused gas through the gas outlet.
Claim 9
Dependent Claim
210 words
A photoelectric conversion semiconductor manufacturing method which employs a reaction chamber provided with a gas inlet, a gas ionizing region, a semiconductor depositing region and a gas outlet arranged in the foregoing order; comprising the steps of disposing a substrate in the semiconductor depositing region of the reaction chamber, and introducing a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer into the gas ionizing region of the reaction chamber through the gas inlet thereof; applying, in the gas ionizing region of the reaction chamber, an ionizing, high-frequency electromagnetic field to the gas mixture to ionize it into a gas mixture plasma; passing the gas mixture plasma into the semiconductor depositing region of the reaction chamber; depositing the semiconductor material on the substrate from the gas mixture plasma passed into the semiconductor depositing region where the atmospheric pressure in the reaction chamber is held below 1 atm and the temperature of the substrate is maintained lower than the crystallizing temperature of the deposited semiconductor material to thereby form a photoelectric conversion semiconductor which comprises a mixture of a microcrystalline semiconductor material and a non-crystalline semiconductor material and which is doped with the dangling bond neutralizer; and exhausting the unused gas through the gas outlet.
Claim 10
Dependent Claim
210 words
A photoelectric conversion semiconductor manufacturing method which employs a reaction chamber provided with a gas inlet, a gas ionizing region, a semiconductor depositing region and a gas outlet arranged in the foregoing order; comprising the steps of disposing a substrate in the semiconductor depositing region of the reaction chamber, and introducing a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer into the gas ionizing region of the reaction chamber through the gas inlet thereof; applying, in the gas ionizing region of the reaction chamber, an ionizing, high-frequency electromagnetic field to the gas mixture to ionize it into a gas mixture plasma; passing the gas mixture plasma into the semiconductor depositing region of the reaction chamber; depositing the semiconductor material on the substrate from the gas mixture plasma passed into the semiconductor depositing region where the atmospheric pressure in the reaction chamber is held below 1 atm and the temperature of the substrate is maintained lower than the crystallizing temperature of the deposited semiconductor material to thereby form a photoelectric conversion semiconductor which comprises a mixture of a microcrystalline semiconductor material and a non-crystalline semiconductor material and which is doped with the dangling bond neutralizer; and exhausting the unused gas through the gas outlet.
Claim 11
Dependent Claim
19 words
A photoelectric conversion semiconductor manufacturing method as in claim 7 where said microcrystalline semiconductor material has a lattice strain.
References Cited (Backward Citations)
US4265991A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |