Abstract A method of providing recessed oxide isolation layers employs prior art techniques to the point at which a photoetched recess has exposed the semiconductor surface in which the recessed oxide isolation layer is to be grown. The semiconductor wafer is then subjected to a nitride layer formation procedure. The nitride layer formed extends into a photoetched recess and forms a nitride layer on the side surfaces of the recess. The newly deposited nitride layer is subjected to an etching process which etches vertically only, exposing the semiconductor surface in a pattern defined by the nitride coated recess. Since the recess walls are lined with a nitride layer, subsequent oxidation growth is restricted to the recess defined by the nitride coated walls. There is no intrusion of the recessed oxide isolation layer into adjacent active areas of the semiconductor material. Thus, the full active width of adjacent areas of the semiconductor is preserved and greater utilization of the available surface area achieved.
A semiconductor structure which permits the growth of at least one recessed oxide region while restricting undesired bird-beak extension growth of said recessed oxide region comprising: a substrate including a first major surface; an oxide layer on said substrate having at least one opening therein; a silicon nitride layer located on said oxide layer, said silicon nitride layer having a single upper surface uniformly spaced from said first major surface of said substrate and provided with a connecting substantially vertical sidewall portion in contact with said oxide layer surrounding said opening; and a recessed oxide region in said substrate, said recessed oxide region having a portion extending within and being bounded by said vertical sidewall portion of said silicon nitride layer.
Claim 2
Dependent Claim
121 words
A semiconductor structure which permits the growth of at least one recessed oxide region while restricting undesired bird-beak extension growth of said recessed oxide region comprising: a substrate including a first major surface; an oxide layer on said substrate having at least one opening therein; a silicon nitride layer located on said oxide layer, said silicon nitride layer having a single upper surface uniformly spaced from said first major surface of said substrate and provided with a connecting substantially vertical sidewall portion in contact with said oxide layer surrounding said opening; and a recessed oxide region in said substrate, said recessed oxide region having a portion extending within and being bounded by said vertical sidewall portion of said silicon nitride layer.