Patent US4461825A successfully refreshed from Google Patents.
US4461825A
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Method for forming resist pattern
Assignee: Toshiba Corp
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Filing: 1983-09-26
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Granted: 1984-07-24
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Expires: 2003-09-26
Abstract
Abstract An improved method of forming a photoresist pattern in the photoengraving process. In the photoengraving process, after forming a photoresist layer, a non-photosensitive organic layer containing cyclized polyisoprene rubber as the major constituent is formed thereover. The organic layer is covered with a mask. The photoresist layer is selectively exposed to light through the organic layer. After developing and removing the organic layer, or together with the organic layer, the photoresist layer is developed.
Inventors
- 👤 Tiharu Kato
- 👤 Hatsuo Nakamura
- 👤 Shigeo Koguchi
- 👤 Toshio Yonezawa
- 👤 Toshihiro Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:43
CPC Classifications
H; H10; H10P; H10P95/00; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/092; Y; Y10; Y10S; Y10S430/00; Y10S430/162
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
111 words
A method of forming a photoresist pattern on a semiconductor substrate in a photo-engraving process, which comprises the steps of: forming a positive photoresist layer on one major surface of the semiconductor substrate; forming, on said photoresist layer, a non-photosensitive organic layer containing cyclized polyisoprene rubber as a major constituent, said cyclized polyisoprene having a degree of unsaturation of about 5.5 to about 7.5 mmol/g; selectively exposing said photoresist layer through said organic layer through a photomask placed in contact with said organic layer; developing said non-photosensitive organic layer with a first developer containing a surface-active agent to remove said organic layer; and developing said photoresist layer with a second developer.
Claim 2
Independent Claim
111 words
A method of forming a photoresist pattern on a semiconductor substrate in a photo-engraving process, which comprises the steps of: forming a positive photoresist layer on one major surface of the semiconductor substrate; forming, on said photoresist layer, a non-photosensitive organic layer containing cyclized polyisoprene rubber as a major constituent, said cyclized polyisoprene having a degree of unsaturation of about 5.5 to about 7.5 mmol/g; selectively exposing said photoresist layer through said organic layer through a photomask placed in contact with said organic layer; developing said non-photosensitive organic layer with a first developer containing a surface-active agent to remove said organic layer; and developing said photoresist layer with a second developer.
Claim 3
Dependent Claim
13 words
The method according to claim 1 wherein said surface-active agent is alkylbenzene sulfonate.
Claim 4
Dependent Claim
16 words
The method according to claim 2 wherein the amount of alkylbenzene sulfonate present is approximately 1%.
Claim 5
Dependent Claim
14 words
The method according to claim 1, wherein the degree of unsaturation is 6.0±0.5 mmol/g.
Claim 6
Dependent Claim
28 words
The method according to claim 1, wherein said organic layer containing cyclized polyisoprene rubber as the major constituent has a thickness of not less than about 0.8 μm.
Claim 7
Dependent Claim
19 words
The method according to claim 1, wherein said cyclized polyisoprene rubber has a molecular weight of 50,000 to 200,000.
Claim 8
Dependent Claim
18 words
The method according to claim 1, wherein said positive resist layer is a phenol novolak-type positive resist layer.
Claim 9
Dependent Claim
45 words
The method according to claim 1, wherein said step of forming, on said photoresist layer, said organic layer containing cyclized polyisoprene rubber as the major constituent comprises coating said photoresist layer with a cyclized polyisoprene rubber solution and drying the coated layer of the solution.
Claim 10
Dependent Claim
48 words
The method according to claim 8, wherein the solvent of said cyclized polyisoprene solution is (a) an aromatic compounds selected from the group consisting of xylene, toluene, benzene, monochlorobenzene, dichlorobenzene, and bromobenzene; (b) an alicyclic compounds selected from the group consisting of methylcyclohexane and kerosene; or (c) trichloroethylene.
Claim 11
Dependent Claim
24 words
The method according to claim 1, wherein said organic layer containing cyclized polyisoprene rubber as the major constituent essentially consists of cyclized polyisoprene rubber.
Claim 12
Dependent Claim
30 words
The method according to claim 8, wherein said organic layer containing cyclized polyisoprene rubber as the major constituent consists of cyclized polyisoprene rubber and the solvent of cyclized polyisoprene rubber.
Claim 13
Dependent Claim
44 words
The method according to claim 1, wherein said first developer is (a) an aromatic compounds selected from the group consisting of xylene, toluene, benzene, monochlorobenzene, dichlorobenzene, and bromobenzene; (b) an alicyclic compounds selected from the group consisting of methylcyclohexane and kerosene; or (c) trichloroethylene.
Claim 14
Dependent Claim
16 words
The method according to claim 1, wherein said surface-active agent is; an anionic surface active agent.
Claim 15
Dependent Claim
16 words
The method according to claim 1, wherein said surface-active agent is a non-ionic surface active agent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-24 | 1988-01-23 | 1988-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-24 | 1992-01-23 | 1992-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-24 | 1996-01-23 | 1996-07-24 | $7700.00 | Window Closed / Lapsed |