Aluminum deposition on semiconductor bodies

Claim 1

A process for the pyrolytic deposition of aluminum from tri-isobutyl aluminum (TIBA) on a hydrogen plasma activated surface of a semiconductor body, comprising the steps of: a. activating the surface of a semiconductor body in a hydrogen glow discharge in the presence of a transport metal; and b. pyrolytically depositing aluminum on said activated surface of said semiconductor body, said depositing step comprising: (i) bubbling a stream of dry, oxygen-free inert gas through a quantity of liquid TIBA so as to entrain a portion of TIBA vapor; (ii) maintaining the liquid TIBA and inert gas at a temperature between 80° and 90° C.; (iii) feeding the inert gas and entrained TIBA to a reaction chamber in which said activated surfaced semiconductor body is disposed; (iv) maintaining a temperature in said reaction chamber within the range between 250° to 270° C. to cause the pyrolytic deposition of aluminum onto said activated surface of said semiconductor body; and (v) supplying periodic pulses of dry, oxygen free inert gas without entrained TIBA to the reaction chamber during deposition whereby a substantially uniform TIBA concentration is maintained within said chamber.