Patent US4459855A successfully refreshed from Google Patents.
US4459855A
Expired / Lapsed
US
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Semiconductor pressure sensor
Assignee: Mitsubishi Electric Corp
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Filing: 1982-08-11
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Granted: 1984-07-17
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Expires: 2002-08-11
Abstract
Abstract An improved semiconductor pressure sensor of the silicon diaphragm type is disclosed. The sensor includes a pressure sensor device composed of a substrate of monocrystalline silicon, a diffused resistive layer formed on one surface of the substrate and a cavity formed in the other surface to create a thin-walled area that includes the diffused resistive layer with the cavity surrounded by a thick-walled leg portion. A hermetic sealable cap covers the one surface of the sensor device. A conductive diffused region from which an electrical signal can be picked up is provided in the leg portion electrically connected to the diffused resistive layer.
Inventors
- 👤 Kozo Yamagami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:36
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; H; H10; H10D; H10D48/00; H10D48/50
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
114 words
In a semiconductor pressure sensor comprising a substrate of monocrystalline silicon having a diffused resistive layer formed on one surface of the substrate and a cavity formed in the other surface of the substrate to form a thin-walled area that includes the diffused resistive layer and with the cavity surrounded by a thick-walled leg portion, and a hermetic sealable cap covering said one surface of the sensor device, the improvement wherein a diffused conductive region is provided in said leg portion and is connected electrically to said diffused resistive layer, said diffused conductive region extending from said one surface of the silicon substrate to an opposite surface at an end of said thick-walled leg.
Claim 2
Dependent Claim
114 words
In a semiconductor pressure sensor comprising a substrate of monocrystalline silicon having a diffused resistive layer formed on one surface of the substrate and a cavity formed in the other surface of the substrate to form a thin-walled area that includes the diffused resistive layer and with the cavity surrounded by a thick-walled leg portion, and a hermetic sealable cap covering said one surface of the sensor device, the improvement wherein a diffused conductive region is provided in said leg portion and is connected electrically to said diffused resistive layer, said diffused conductive region extending from said one surface of the silicon substrate to an opposite surface at an end of said thick-walled leg.
Claim 3
Dependent Claim
28 words
The semiconductor pressure sensor according to claim 1, wherein a plurality of diffused conductive regions, which are electrically isolated from one another, are provided in said thick-walled portion.
Claim 4
Dependent Claim
27 words
The semiconductor pressure sensor according to claim 3, further comprising a metallized electrode connected to each diffused conductive region disposed on said other surface of said substrate.
Claim 5
Dependent Claim
28 words
The semiconductor pressure sensor according to any one of claims 1, 2 or 3, wherein said one surface of said substrate is covered by a protective insulating film.
References Cited (Backward Citations)
US3210620A
Cited
US4023562A
Cited
US4202217A
Cited
US4291293A
Cited
US4222277A
Cited
US4332000A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-17 | 1988-01-16 | 1988-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-17 | 1992-01-16 | 1992-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-17 | 1996-01-16 | 1996-07-17 | $7700.00 | Window Closed / Lapsed |