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Patent US4458261A successfully refreshed from Google Patents.
US4458261A
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Insulated gate type transistors
Assignee: NTT Inc
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Filing: 1981-09-21
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Granted: 1984-07-03
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Expires: 2001-09-21
Abstract
Abstract An insulated gate type transistor has a nonsaturating current characteristic as well as a saturating current type characteristic. P + , N, N + or N + , P, P + regions are juxtaposed in the horizontal direction in a semiconductor layer formed on an insulating layer. A gate electrode is provided on a portion of the N or P region through a gate insulating film, and the thickness of the N or P region beneath the gate electrode is less than π/2 times of a Debye length inherent to the semiconductor constituting the active region.
Inventors
- 👤 Yasuhisa Omura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:51
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D12/00; H10D12/211
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
115 words
An insulated gate type transistor comprising: an insulating layer; an active region made of a first conductive type semiconductor formed on said insulating layer; a first region made of a high impurity concentration semiconductor having a first conductivity type and located adjacent to said active region; a second region made of a high impurity concentration semiconductor of a second conductivity type adjacent to said active region but apart from said first region; a gate insulating film formed on said active region; a gate electrode formed on said gate insulating and; a portion of said active region having a thickness less than π/2 times of a Debye length inherent to the semiconductor constituting said active region.
Claim 2
Dependent Claim
115 words
An insulated gate type transistor comprising: an insulating layer; an active region made of a first conductive type semiconductor formed on said insulating layer; a first region made of a high impurity concentration semiconductor having a first conductivity type and located adjacent to said active region; a second region made of a high impurity concentration semiconductor of a second conductivity type adjacent to said active region but apart from said first region; a gate insulating film formed on said active region; a gate electrode formed on said gate insulating and; a portion of said active region having a thickness less than π/2 times of a Debye length inherent to the semiconductor constituting said active region.
Claim 3
Dependent Claim
24 words
The transistor according to claim 1 wherein said first region acts as a cathode region and said second region acts as an anode region.
Claim 4
Dependent Claim
24 words
The transistor according to claim 1 wherein said first region acts as an anode region and said second region acts as a cathode region.
Claim 5
Dependent Claim
16 words
The transistor according to claim 1 wherein said active region is formed on said insulating layer.
Claim 6
Dependent Claim
16 words
The transistor according to claim 1 wherein said active region is embedded in said insulating layer.
Claim 7
Dependent Claim
16 words
The transistor according to claim 1 wherein said insulating layer is formed on a semiconductor substrate.
Claim 8
Dependent Claim
15 words
The transistor according to claim 1 wherein said insulating layer comprises a silicon oxide film.
Claim 9
Dependent Claim
14 words
The transistor according to claim 1 wherein said insulating layer is made of sapplire.
Claim 10
Dependent Claim
32 words
The transistor according to claim 1 wherein a portion of said active region other than portions thereof having a thickness less than π/2 times of the Debye length has a substantial thickness.
Claim 11
Dependent Claim
37 words
The transistor according to claim 2 wherein said cathode region has another cathode region at a portion in contact with said active region, said another cathode region being made of a semiconductor of the second conductivity type.
Claim 12
Dependent Claim
28 words
The transistor according to claim 1 wherein said active region, said first region and said second region formed on said insulating layer are made of a monocrystalline semiconductor.
Claim 13
Dependent Claim
139 words
An insulated gate type transistor comprising: an insulating layer; an active region formed on said insulating layer and is made of a semiconductor of a first conductivity type; a first region located adjacent to said active region and is made of a semiconductor having the first conductivity type and a high impurity concentration; a second region located adjacent to said active region but apart from said first region and is made of a second conductivity type semiconductor; a gate insulating film formed on said active region, and a gate electrode formed on said gate insulating film, thickness of a portion of said active region being less than π/2 times of a Debye length inherent to the semiconductor constituting said active region, wherein a plurality of said transistors being disposed three dimensionally on the opposite sides of an insulating layer.
Claim 14
Dependent Claim
139 words
An insulated gate type transistor comprising: an insulating layer; an active region formed on said insulating layer and is made of a semiconductor of a first conductivity type; a first region located adjacent to said active region and is made of a semiconductor having the first conductivity type and a high impurity concentration; a second region located adjacent to said active region but apart from said first region and is made of a second conductivity type semiconductor; a gate insulating film formed on said active region, and a gate electrode formed on said gate insulating film, thickness of a portion of said active region being less than π/2 times of a Debye length inherent to the semiconductor constituting said active region, wherein a plurality of said transistors being disposed three dimensionally on the opposite sides of an insulating layer.
Claim 15
Dependent Claim
24 words
The transistor according to claim 12 wherein said first region acts as a cathode region and said second region acts as an anode region.
Claim 16
Dependent Claim
24 words
The transistor according to claim 12 wherein said first region acts as an anode region and said second region acts as a cathode region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-03 | 1988-01-02 | 1988-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-03 | 1992-01-02 | 1992-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-03 | 1996-01-02 | 1996-07-03 | $7700.00 | Window Closed / Lapsed |