US4457949A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a photoelectric conversion layer
Assignee: Hitachi Ltd
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Filing: 1982-06-15
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Granted: 1984-07-03
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Expires: 2002-06-15
Abstract
Abstract A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200 DEG C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200 DEG C.-400 DEG C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200 DEG C.-240 DEG C., and in case of using holes as major carriers, preferably it is set in a range of 270 DEG C.-400 DEG C.
Inventors
- 👤 Yukio Takasaki
- 👤 Yasuharu Shimomoto
- 👤 Yasuo Tanaka
- 👤 Akira Sasano
- 👤 Toshihisa Tsukada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:35
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/20; H01J9/233; H10; H10F; H10F10/00; H10F30/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
63 words
A method of producing a photoelectric conversion layer comprising the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate in a plasma atmosphere at a substrate temperature below 200° C., subsequently stopping the plasma and then immediately heat-treating said hydrogen-containing amorphous silicon layer at 200° C.-400° C. without the presence of a heat cycle in which the substrate is cooled.
Claim 2
Independent Claim
63 words
A method of producing a photoelectric conversion layer comprising the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate in a plasma atmosphere at a substrate temperature below 200° C., subsequently stopping the plasma and then immediately heat-treating said hydrogen-containing amorphous silicon layer at 200° C.-400° C. without the presence of a heat cycle in which the substrate is cooled.
Claim 3
Dependent Claim
29 words
A method of producing a photoelectric conversion layer according to claim 1, wherein the heating step is carried out at a temperature of from 200° C. to 240° C.
Claim 4
Dependent Claim
29 words
A method of producing a photoelectric conversion layer according to claim 1, wherein the heating step is carried out at a temperature of from 240° C. to 400° C.
Claim 5
Dependent Claim
40 words
A method of producing a photoelectric conversion layer according to claim 1, 2 or 3, wherein the step of forming a hydrogen-containing amorphous silicon layer is carried out by a reactive sputtering in an atmosphere which contains at least hydrogen.
Claim 6
Dependent Claim
41 words
A method of producing a photoelectric conversion layer according to claim 1, 2 or 3, wherein the step of forming a hydrogen-containing amorphous silicon layer is carried out by a glow discharge process in an atmosphere which contains at least silane.
Claim 7
Independent Claim
49 words
A method of producing an image pickup device comprising the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate in a plasma atmosphere at a substrate temperature below 200° C., and subsequently heat-treating said hydrogen-containing amorphous silicon layer at 200° C.-400° C. without cooling the substrate.
Claim 8
Independent Claim
49 words
A method of producing an image pickup device comprising the steps of forming a hydrogen-containing amorphous silicon layer on a predetermined substrate in a plasma atmosphere at a substrate temperature below 200° C., and subsequently heat-treating said hydrogen-containing amorphous silicon layer at 200° C.-400° C. without cooling the substrate.
Claim 9
Dependent Claim
29 words
A method of producing an image pickup device according to claim 6, wherein the heating step is carried out at a temperature of from 200° C. to 240° C.
Claim 10
Dependent Claim
29 words
A method of producing an image pickup device according to claim 6, wherein the heating step is carried out at a temperature of from 240° C. to 400° C.
Claim 11
Dependent Claim
40 words
A method of producing an image pickup device according to claim 6, 7 or 8, wherein the step of forming a hydrogen-containing amorphous silicon layer is carried out by a reactive sputtering in an atmosphere which contains at least hydrogen.
Claim 12
Dependent Claim
41 words
A method of producing an image pickup device according to claim 6, 7 or 8, wherein the step of forming a hydrogen-containing amorphous silicon layer is carried out by a glow discharge process in an atmosphere which contains at least silane.
References Cited (Backward Citations)
US4255686A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-03 | 1988-01-02 | 1988-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-03 | 1992-01-02 | 1992-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-03 | 1996-01-02 | 1996-07-03 | $7700.00 | Window Closed / Lapsed |