US4255686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Storage type photosensor containing silicon and hydrogen
Assignee: Hitachi Ltd
•
Filing: 1979-05-16
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Granted: 1981-03-10
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Expires: 1999-05-16
Abstract
Abstract In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10 10 Ω·cm.
Inventors
- 👤 Eiichi Maruyama
- 👤 Yoshinori Imamura
- 👤 Saburo Ataka
- 👤 Kiyohisa Inao
- 👤 Yukio Takasaki
- 👤 Toshihisa Tsukada
- 👤 Tadaaki Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:55
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
119 words
In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that said photoconductive layer is constructed of a single layer or a plurality of layers of photoconductive substances, and that at least a region of said photoconductive layer is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10 10 Ω·cm.
Claim 2
Dependent Claim
119 words
In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that said photoconductive layer is constructed of a single layer or a plurality of layers of photoconductive substances, and that at least a region of said photoconductive layer is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10 10 Ω·cm.
Claim 3
Dependent Claim
56 words
A photosensor according to claim 1, characterized in that said amorphous material containing hydrogen and silicon as indispensable constituent elements thereof contains 50 atomic % of silicon and at least 10 atomic % and at most 50 atomic % of hydrogen, the balance being germanium, and that its resistivity is not lower than 10 10 Ω·cm.
Claim 4
Dependent Claim
21 words
A photosensor according to claim 1 or 2, characterized in that said photoconductive layer is 100 nm to 20 μm thick.
Claim 5
Dependent Claim
26 words
A photosensor according to claim 1 or 2, characterized in that an n-type oxide layer is interposed between said transparent conductive layer and said photoconductive layer.
Claim 6
Dependent Claim
37 words
A photosensor according to claim 4, characterized in that said n-type oxide layer is made of at least one member selected from the group consisting of cerium oxide, tungsten oxide, niobium oxide, germanium oxide and molybdenum oxide.
Claim 7
Dependent Claim
37 words
A photosensor according to claim 1 or 2, characterized in that said amorphous material containing hydrogen and silicon as indispensable constituent elements thereof is an amorphous material produced by the reactive sputtering in an atmosphere containing hydrogen.
Claim 8
Dependent Claim
23 words
A storage type photosensor according to claim 1 or 2, characterized in that a beam landing layer is disposed on said photoconductive layer.
Claim 9
Dependent Claim
38 words
A photosensor according to claim 1 or 2, characterized in that an n-type oxide layer is interposed between said transparent conductive layer and said photoconductive layer, and that a beam landing layer is disposed on said photoconductive layer.
Claim 10
Dependent Claim
41 words
A photosensor according to claim 1 characterized in that said photoconductive layer is constructed of a plurality of layers of photoconductive substances and that one of said plurality of layers of photoconductive substances comprises said region made of said amorphous material.
References Cited (Backward Citations)
GB1289651A
Cited
US3890523A
Cited
GB1349351A
Cited
US3982149A
Cited
FR2331887B1
Cited
US4147667A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-09 | 1984-09-08 | 1985-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-09 | 1988-09-08 | 1989-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-09 | 1992-09-08 | 1993-03-10 | $7700.00 | Window Closed / Lapsed |