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US4455193A
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US
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Process for producing the field oxide of an integrated circuit
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1983-06-29
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Granted: 1984-06-19
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Expires: 2003-06-29
Abstract
Abstract Process for producing the field oxide of an integrated circuit, wherein it comprises the following successive stages: (a) producing a resin mask on a first region of a doped semiconductor substrate, in which will be formed the active component of the integrated circuit, (b) production of a first etching over a height h of a second region of the doped semiconductor substrate, in which it is wished to produce the field oxide, (c) implantation of ions in the second region of the remaining substrate, giving a doping of the same type as that of the substrate, (d) deposition of an insulating layer on the complete substrate, (e) deposition of a resin layer on the insulating layer, (f) production of a second simultaneous etching of the resin layer and the insulating layer, until the complete elimination of that region of the oxide layer positioned above the first region of the substrate in which will be produced the active component of the integrated circuit.
Inventors
- 👤 Pierre Jeuch
- 👤 Pierre Parrens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:09
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0124; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
163 words
A process for producing the field oxide of an integrated circuit, wherein it comprises the following successive stages: (a) producing a resin mask on a first region of a doped semiconductor substrate, in which will be formed the active component of the integrated circuit, (b) production of a first etching over a height h of a second region of the doped semiconductor substrate, in which it is wished to produce the field oxide, (c) implantation of ions in the second region of the remaining substrate, giving a doping of the same type as that of the substrate, (d) deposition of an insulating layer on the complete substrate, (e) deposition of a resin layer on the insulating layer, (f) production of a second simultaneous etching of the resin layer and the insulating layer, until the complete elimination of that region of the oxide layer positioned above the first region of the substrate in which will be produced the active component of the integrated circuit.
Claim 2
Dependent Claim
163 words
A process for producing the field oxide of an integrated circuit, wherein it comprises the following successive stages: (a) producing a resin mask on a first region of a doped semiconductor substrate, in which will be formed the active component of the integrated circuit, (b) production of a first etching over a height h of a second region of the doped semiconductor substrate, in which it is wished to produce the field oxide, (c) implantation of ions in the second region of the remaining substrate, giving a doping of the same type as that of the substrate, (d) deposition of an insulating layer on the complete substrate, (e) deposition of a resin layer on the insulating layer, (f) production of a second simultaneous etching of the resin layer and the insulating layer, until the complete elimination of that region of the oxide layer positioned above the first region of the substrate in which will be produced the active component of the integrated circuit.
Claim 3
Dependent Claim
24 words
A production process according to claim 1, wherein the second etching process is performed with identical etching speeds for the resin and the insulant.
Claim 4
Dependent Claim
39 words
A production process according to claim 1, wherein the second etching process is a reactive ionic etching in a gaseous mixture, either containing trifluoromethane and oxygen, or carbon tetrafluoride CF 4 and oxygen, or sulphur hexafluoride SF 6 .
Claim 5
Dependent Claim
50 words
A production process according to claim 1, wherein between the resin mask and the substrate is positioned a protective layer and before performing stage (b), there is a third etching of a first region of the protective layer, said first region being located above the second region of the substrate.
Claim 6
Dependent Claim
17 words
A production process according to claim 4, wherein the third etching process is a reactive ionic etching.
Claim 7
Dependent Claim
37 words
A production process according to claim 4, wherein, after performing stage (f), there is a fourth etching of a second region of the protective layer, said second region being positioned above the first region of the substrate.
Claim 8
Dependent Claim
16 words
A production process according to claim 6, wherein the fourth etching process is a chemical etching.
Claim 9
Dependent Claim
20 words
A production proess according to claim 1, wherein the first region of the substrate undergoes sloping etching during stage (b).
Claim 10
Dependent Claim
33 words
A production process according to claim 8, wherein sloping etching is brought about by means of a sloping profile of the resin mask, effected during stage (a), and an anisotropic reactive ionic etching.
Claim 11
Dependent Claim
27 words
A production process according to claim 9, wherein, in order to obtain a sloping profile of the resin mask, said resin undergoes heat treatment after its development.
Claim 12
Dependent Claim
33 words
A production process according to claim 9, wherein, in order to obtain a sloping profile of the resin mask, said resin is subject to the action of an oxygen plasma following its development.
Claim 13
Dependent Claim
20 words
A production process according to claim 1, wherein the substrate undergoes thermal oxidation after stage (b) and before stage (d).
Claim 14
Dependent Claim
14 words
A production process according to claim 1, wherein the insulating layer is of silica.
Claim 15
Dependent Claim
15 words
A production process according to claim 1, wherein the protective layer is of silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-19 | 1987-12-19 | 1988-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-19 | 1991-12-19 | 1992-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-19 | 1995-12-19 | 1996-06-19 | $7700.00 | Window Closed / Lapsed |