Patent US4454200A successfully refreshed from Google Patents.
US4454200A
Expired / Lapsed
US
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Methods for conducting electron beam lithography
Assignee: Varian Semiconductor Equipment Associates Inc
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Filing: 1983-03-03
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Granted: 1984-06-12
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Expires: 2003-03-03
Abstract
Abstract Plasma etch durability of polymeric resists used in electron beam lithography is improved by vapor phase impregnation with an aromatic compound after development of an image. The aromatic compound should possess a polarity similar to the polymeric resist and should be relatively volatile to facilitate vapor phase diffusion.
Inventors
- 👤 Emile M. Bellott, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; Y; Y10; Y10T; Y10T428/00; Y10T428/31504
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
95 words
An article of manufacture comprising a substrate having a polymeric resist thereon, said polymeric resist having been impregnated with a volatile aromatic compound by vapor diffusion, said impregnated resist having improved resistance to plasma etching, wherein the aromatic compound is of the following general formula: ##STR2## wherein any of the R groups can be hydrogen, halogen, alkyl of 1 to 7 carbons, alkoxy, phenyl, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus.
Claim 2
Dependent Claim
95 words
An article of manufacture comprising a substrate having a polymeric resist thereon, said polymeric resist having been impregnated with a volatile aromatic compound by vapor diffusion, said impregnated resist having improved resistance to plasma etching, wherein the aromatic compound is of the following general formula: ##STR2## wherein any of the R groups can be hydrogen, halogen, alkyl of 1 to 7 carbons, alkoxy, phenyl, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus.
Claim 3
Dependent Claim
63 words
An article according to claim 1 wherein the polymeric resist is selected from the group consisting of polystyrene, polymethyl methacrylate, polyglycidyl methacrylate, polychloromethyl (styrene), poly(diallylphthalate), poly(methylvinyl ketone), poly(vinyl acetate), poly(vinyl cinnamate), poly(vinyl chloride), polyvinyl pyrrolidone, poly(glycidyl methacrylate-co-ethyl acrylate), poly(4-chlorostyrene), polyvinyltoluene (mixed isomers), polyvinylbenzylchlorides, poly(4-bromostyrene), poly(4-iso-propylstyrene), poly(4-tert.-butylstyrene), poly(butene-1-sulfone), copolymers of alpha cyano ethyl acrylate and alpha amide ethyl acrylate, poly(glycidyl acrylate), and poly(glycidyl methacrylate-co-3-chlorostyrene).
Claim 4
Independent Claim
99 words
A method for improving the plasma etch durability of a polymeric resist material and images delineated in said resist material, which comprises incorporating an aromatic chemical compound into the resist image by vapor phase diffusion after exposure and development, wherein the aromatic compound is of the following general formula: ##STR3## wherein any of the R groups can be hydrogen, halogen, alkyl of 1 to 7 carbons, alkoxy, phenyl, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus.
Claim 5
Independent Claim
99 words
A method for improving the plasma etch durability of a polymeric resist material and images delineated in said resist material, which comprises incorporating an aromatic chemical compound into the resist image by vapor phase diffusion after exposure and development, wherein the aromatic compound is of the following general formula: ##STR3## wherein any of the R groups can be hydrogen, halogen, alkyl of 1 to 7 carbons, alkoxy, phenyl, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus.
Claim 6
Dependent Claim
61 words
A method according to claim 3 wherein the polymeric resist is selected from the group consisting of polystyrene, polymethyl methacrylate, polyglycidyl methacrylate, polychloromethyl(styrene), poly(diallylphthalate), poly(methylvinyl ketone), poly(vinylacetate), poly(vinyl cinnamate), poly(vinyl chloride), polyvinyl pyrrolidone, poly(glycidyl methacrylate-co-ethyl acrylate), poly(4-chlorostyrene), polyvinyltoluene (mixed isomers), polyvinylbenzylchlorides, poly(4-bromostyrene), poly(4-iso-propylstyrene), poly(4-tert.-butylstyrene), poly(butene-1-sulfone), copolymers of alpha cyano ethyl acrylate and alpha amide ethyl acrylate, poly(glycidyl acrylate), and poly(glycidyl methacrylate-co-3-chlorostyrene).
Claim 7
Dependent Claim
29 words
A method according to claim 3 wherein the polymeric resist is contacted with the vapor of the aromatic compound at a temperature of about 100° C. to 200° C.
Claim 8
Dependent Claim
23 words
A method according to claim 3 wherein the aromatic compound is selected from the group consisting of benzene, naphthalene, anthracene, biphenyl and 1,4-dichlorobenzene.
Claim 9
Dependent Claim
44 words
A method according to claim 3 for improving the plasma etch durability of a polymeric resist material and images delineated in said resist material wherein the compound incorporated into the resist image by vapor phase diffusion after exposure and development is anthracene or 1,4-dichlorobenzene.
Claim 10
Independent Claim
169 words
A method for forming a predetermined surface relief pattern in a film of resist material, said method comprising the steps of: (a) providing a film of a polymeric resist material on a substrate; (b) exposing a portion of the film corresponding to said predetermined pattern to radiation which changes the solubility of the exposed portion with respect to the unexposed portion; (c) dissolving the more soluble portion of the film with the developer solution to provide a relief pattern; and (d) exposing the resist material to the vapor of an aromatic compound which is effective to dissolve into the polymeric resist to improve the plasma etch durability of the resist, wherein the aromatic compound is of the following general formula: ##STR4## wherein any of the R groups can be hydrogen halogen, alkyl of 1 to 7 carbons, alkoxy, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus.
Claim 11
Independent Claim
169 words
A method for forming a predetermined surface relief pattern in a film of resist material, said method comprising the steps of: (a) providing a film of a polymeric resist material on a substrate; (b) exposing a portion of the film corresponding to said predetermined pattern to radiation which changes the solubility of the exposed portion with respect to the unexposed portion; (c) dissolving the more soluble portion of the film with the developer solution to provide a relief pattern; and (d) exposing the resist material to the vapor of an aromatic compound which is effective to dissolve into the polymeric resist to improve the plasma etch durability of the resist, wherein the aromatic compound is of the following general formula: ##STR4## wherein any of the R groups can be hydrogen halogen, alkyl of 1 to 7 carbons, alkoxy, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus.
Claim 12
Dependent Claim
39 words
A method according to claim 8 wherein the reaction of the aromatic compound with the polymeric resist is conducted at a temperature of about 100° C. to 200° C. for a time period of about one-half to three hours.
Claim 13
Dependent Claim
63 words
A method according to claim 8 wherein the polymeric resist is selected from the group consisting of polystyrene, polymethyl methacrylate, polyglycidyl methacrylate, polychloromethyl (styrene), poly(diallylphthalate), poly(methylvinyl ketone), poly(vinyl acetate), poly(vinyl cinnamate), poly(vinyl chloride), polyvinyl pyrrolidone, poly(glycidyl methacrylate-co-ethyl acrylate), poly(4-chlorostyrene), polyvinyltoluene (mixed isomers), polyvinylbenzylchlorides, poly(4-bromostyrene), poly(4-iso-propylstyrene), poly(4-tert.-butylstyrene), poly(butene-1-sulfone), copolymers of alpha cyano ethyl acrylate and alpha amide ethyl acrylate, poly(glycidyl acrylate), and poly(glycidyl methacrylate-co-3-chlorostyrene).
Claim 14
Dependent Claim
23 words
A method according to claim 8 wherein the aromatic compound is selected from the group consisting of benzene, naphthalene, anthracene, biphenyl, and 1,4-dichlorobenzene.
Claim 15
Independent Claim
195 words
A method for forming a predetermined surface relief pattern in a film of a resist material, by electron beam lithography, said method comprising the steps of: (a) providing a film of polymeric material as a resist material on a substrate; (b) exposing a portion of the film corresponding to said predetermined pattern to electron beam radiation which changes the solubility of the exposed portion with respect to the unexposed portion; (c) dissolving the more soluble portion of the film with a developer solution to provide said relief pattern; (d) exposing the developed resist to the vapor of an aromatic compound which is effective to dissolve into the polymeric resist to improve the plasma etch durability of the resist, wherein the aromatic compound is of the following general formula: ##STR5## wherein any of the R groups can be hydrogen, halogen, alkyl of 1 to 7 carbons, alkoxy, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus; and (e) subjecting the resist to a plasma etch to etch out the unprotected areas on the substrate.
Claim 16
Independent Claim
195 words
A method for forming a predetermined surface relief pattern in a film of a resist material, by electron beam lithography, said method comprising the steps of: (a) providing a film of polymeric material as a resist material on a substrate; (b) exposing a portion of the film corresponding to said predetermined pattern to electron beam radiation which changes the solubility of the exposed portion with respect to the unexposed portion; (c) dissolving the more soluble portion of the film with a developer solution to provide said relief pattern; (d) exposing the developed resist to the vapor of an aromatic compound which is effective to dissolve into the polymeric resist to improve the plasma etch durability of the resist, wherein the aromatic compound is of the following general formula: ##STR5## wherein any of the R groups can be hydrogen, halogen, alkyl of 1 to 7 carbons, alkoxy, or any two or more of the R groups can be alkylene chains of 3 to 4 carbon atoms to form one or more fused rings on the basic benzene nucleus; and (e) subjecting the resist to a plasma etch to etch out the unprotected areas on the substrate.
Claim 17
Dependent Claim
13 words
A method according to claim 12 wherein the substrate is silicon or sapphire.
Claim 18
Dependent Claim
16 words
A method according to claim 12 wherein the resist is applied in a film forming solvent.
Claim 19
Dependent Claim
29 words
A method according to claim 12 wherein the polymeric resist is contacted with the vapor of the aromatic compound at a temperature of about 100° C. to 200° C.
Claim 20
Dependent Claim
30 words
A method according to claim 12 wherein the film is exposed to electron beam radiation at a level of approximately 0.1-20 microcoulomb per square centimeter to cross link the polymer.
Claim 21
Dependent Claim
63 words
A method according to claim 16 wherein the polymeric resist is selected from the group consisting of polystyrene, polymethyl methacrylate, polyglycidyl methacrylate, polychloromethyl (styrene), poly(diallylphthalate), poly(methylvinyl ketone), poly(vinyl acetate), poly(vinyl cinnamate), poly(vinyl chloride), polyvinyl pyrrolidone, poly(glycidyl methacrylate-co-ethyl acrylate), poly(4-chlorostyrene), polyvinyltoluene (mixed isomers), polyvinylbenzylchlorides, poly(4-bromostyrene), poly(4-iso-propylstyrene), poly(4-tert.-butylstyrene), poly(butene-1-sulfone), copolymers of alpha cyano ethyl acrylate and alpha amide ethyl acrylate, poly(glycidyl acrylate), and poly(glycidyl methacrylate-co-3-chlorostyrene).
Claim 22
Dependent Claim
23 words
A method according to claim 17 wherein the aromatic compound is selected from the group consisting of benzene, naphthalene, anthracene, biphenyl and 1,4-dichlorobenzene.
Claim 23
Dependent Claim
35 words
An article of manufacture comprising a substrate having a polymeric resist thereon, said polymeric resist having been impregnated with a volatile aromatic compound by vapor diffusion, said impregnated resist having improved resistance to plasma etching.
Claim 24
Dependent Claim
35 words
An article of manufacture comprising a substrate having a polymeric resist thereon, said polymeric resist having been impregnated with a volatile aromatic compound by vapor diffusion, said impregnated resist having improved resistance to plasma etching.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-12 | 1987-12-12 | 1988-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-12 | 1991-12-12 | 1992-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-12 | 1995-12-12 | 1996-06-12 | $7700.00 | Window Closed / Lapsed |