US4451547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrophotographic α-Si(H) member and process for production thereof
Assignee: Canon Inc
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Filing: 1980-12-08
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Granted: 1984-05-29
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Expires: 2000-12-08
Abstract
Abstract A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
Inventors
- 👤 Yutaka Hirai
- 👤 Toshiyuki Komatsu
- 👤 Katsumi Nakagawa
- 👤 Teruo Misumi
- 👤 Tadaji Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:24
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/0021; C23C14/0036; C23C14/0057; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/455; C23C16/45523; C23C16/50; C23C16/505; C23C16/507; C23C16/509; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228; G03G5/08235; G03G5/08242; G03G5/08278; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
138 words
A process for preparing an electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer comprising amorphous silicon and containing an effective amount of hydrogen to provide high dark resistance and high SN ratio for electrophotographic processing, which comprises: (a) subjecting a substrate suitable for electrophotography to a reduced pressure in an evacuable system, (b) introducing gaseous material containing sources of silicon and hydrogen into said system under said reduced pressure, (c) causing an electrical discharge in said gaseous material so as to form a photoconductive layer comprising hydrogenated amorphous silicon on the substrate wherein the temperature of said substrate is maintained with the range from 50° to 350° C., and, (d) after said layer is formed, maintaining the layer under reduced pressure until the temperature of the substrate drops to or below a predetermined temperature.
Claim 2
Dependent Claim
138 words
A process for preparing an electrophotographic photosensitive member comprising a substrate for electrophotography and a photoconductive layer comprising amorphous silicon and containing an effective amount of hydrogen to provide high dark resistance and high SN ratio for electrophotographic processing, which comprises: (a) subjecting a substrate suitable for electrophotography to a reduced pressure in an evacuable system, (b) introducing gaseous material containing sources of silicon and hydrogen into said system under said reduced pressure, (c) causing an electrical discharge in said gaseous material so as to form a photoconductive layer comprising hydrogenated amorphous silicon on the substrate wherein the temperature of said substrate is maintained with the range from 50° to 350° C., and, (d) after said layer is formed, maintaining the layer under reduced pressure until the temperature of the substrate drops to or below a predetermined temperature.
Claim 3
Dependent Claim
50 words
A process according to claim 1 wherein amorphous silicon is deposited on said substrate at a deposition range of 0.5-100 angstroms/sec. by utilizing said electrical discharge while raising temperature of said substrate from the starting temperature (T 1 ), to form an amorphous silicon photoconductive layer of a predetermined thickness.
Claim 4
Dependent Claim
14 words
A process according to claim 1 in which said gaseous material comprises a silane.
Claim 5
Dependent Claim
17 words
A process according to any one of claims 1 in which said gaseous material comprises hydrogen gas.
Claim 6
Dependent Claim
31 words
A process according to any one of claims 1 in which said electric discharge is caused with an electric current density of 0.1-10 mA/cm 2 and a voltage of 100-5000 V.
Claim 7
Dependent Claim
23 words
A process according to any one of claims 1 in which said electric discharge is caused with an electric power of 0.1-300 W.
Claim 8
Dependent Claim
43 words
A process according to any one of claims 1 wherein the temperature of said substrate is raised from the starting temperature (T 1 ) to a temperature (T 2 ) and then decreased to a temperature lower than the temperature (T 2 ).
Claim 9
Dependent Claim
21 words
A process according to any one of claims 1 in which the gaseous material within the system includes an inert gas.
Claim 10
Dependent Claim
50 words
A process according to claim 8 in which the gaseous material within the system includes an inert gas; not less than 10 percent by volume, based on the inert gas, of a silane gas and a gas containing an element of Group IIIA of the Periodic Table as a constituent.
Claim 11
Dependent Claim
50 words
A process according to claim 8 in which said gaseous material within the system includes an inert gas; not less than 10 percent by volume, based on the inert gas, of a silane gas and a gas containing an element of Group VA of the Periodic Table as a constituent.
Claim 12
Dependent Claim
14 words
A process according to claim 3 in which said silane is SiH 4 .
Claim 13
Dependent Claim
16 words
A process according to claim 3 in which said silane is Si 2 H 6 .
Claim 14
Dependent Claim
16 words
A process according to claim 3 in which said silane is Si 4 H 10 .
Claim 15
Dependent Claim
26 words
A process according to claim 10 in which said gas containing an element of Group IIIA of the Periodic Table is B 2 H 6 .
Claim 16
Dependent Claim
29 words
A process according to claim 10 in which said gas containing an element of Group VA of the Periodic Table is PH 3 or P 2 H 4 .
Claim 17
Dependent Claim
27 words
A process according to claim 1 in which said gaseous material comprises a gas containing an element of Group IIIA of the Periodic Table as a constituent.
Claim 18
Dependent Claim
26 words
A process according to claim 16 in which said gas containing an element of Group IIIA of the Periodic Table is B 2 H 6 .
Claim 19
Dependent Claim
27 words
A process according to claim 1 in which said gaseous material comprises a gas containing an element of Group VA of the Periodic Table as a constituent.
Claim 20
Dependent Claim
29 words
A process according to claim 18 in which said gas containing an element of Group VA of the Periodic Table is PH 3 or P 2 H 4 .
Claim 21
Dependent Claim
29 words
A process according to claim 1 further comprising the step of cleaning the surface of the substrate by applying an electrical discharge to said surface, prior to step (b).
Claim 22
Dependent Claim
24 words
A process according to claim 1 further comprising the step of cleaning the surface of said substrate by chemical treatment, prior to step (b).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-29 | 1987-11-28 | 1988-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-29 | 1991-11-28 | 1992-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-29 | 1995-11-28 | 1996-05-29 | $7700.00 | Window Closed / Lapsed |