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US4450466A
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Semiconductor image sensor
Assignee: Fujifilm Holdings Corp
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Filing: 1981-12-02
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Granted: 1984-05-22
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Expires: 2001-12-02
Abstract
Abstract A semiconductor image sensor which comprises a plurality of image sensor cells, each having a photosensing and accumulation region of an n + -p - -(i)-p + -n + (or p + -n - -(i)-n + -p + ) hook structure which is formed by sequentially forming its respective regions in a semiconductor substrate inwardly thereof from its surface. The photosensing and accumulation regions are isolated by insulating isolation regions from adjacent ones of them. A tapering conductive region, which acts as an electric field lens on charged carriers, is formed to extend into a high resistivity layer of the photosensing region from the end face of each insulating isolation region on the side of the semiconductor substrate.
Inventors
- 👤 Jun-ichi Nishizawa
- 👤 Tadahiro Ohmi
- 👤 Seiji Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:12
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
100 words
A semiconduction image sensor comprising: a low resistivity first region of a first conductivity type; a high resistivity second region of a selected conductivity type; a low resistivity third region of a second conductivity type reverse from the first type; a low resistivity fourth region of the first conductivity type, the first to fourth regions being sequentially formed one on another in a semiconductor substrate inwardly thereof from its surface; an insulating isolation region extending through the third and fourth regions for isolating at least two portions of the third and fourth regions from each other in a lateral direction;
Claim 2
Dependent Claim
100 words
A semiconduction image sensor comprising: a low resistivity first region of a first conductivity type; a high resistivity second region of a selected conductivity type; a low resistivity third region of a second conductivity type reverse from the first type; a low resistivity fourth region of the first conductivity type, the first to fourth regions being sequentially formed one on another in a semiconductor substrate inwardly thereof from its surface; an insulating isolation region extending through the third and fourth regions for isolating at least two portions of the third and fourth regions from each other in a lateral direction;
Claim 3
Dependent Claim
66 words
a fifth region of a conductivity type reverse from the selected type taperingly extending into the second region in a vertical direction from a portion of the insulating isolation region facing towards the first region and being between the at least two portions of the third and fourth regions; an electrode disposed in contact with the fourth region; and readout means connected to the fourth region.
Claim 4
Dependent Claim
66 words
a fifth region of a conductivity type reverse from the selected type taperingly extending into the second region in a vertical direction from a portion of the insulating isolation region facing towards the first region and being between the at least two portions of the third and fourth regions; an electrode disposed in contact with the fourth region; and readout means connected to the fourth region.
Claim 5
Dependent Claim
24 words
A semiconductor image sensor according to claim 1 wherein the readout means is a metal electrode deposited on the surface of the fourth region.
Claim 6
Dependent Claim
36 words
A semiconductor image sensor according to claim 1 wherein the readout means is one of a static induction transistor and a field effect transistor using the fourth region as one of its source and drain region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-22 | 1987-11-21 | 1988-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-22 | 1991-11-21 | 1992-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-22 | 1995-11-21 | 1996-05-22 | $7700.00 | Window Closed / Lapsed |