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Patent US4448549A successfully refreshed from Google Patents.
US4448549A
Expired / Lapsed
US
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Temperature sensing device
Assignee: Citizen Watch Co Ltd
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Filing: 1982-02-09
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Granted: 1984-05-15
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Expires: 2002-02-09
Abstract
Abstract A temperature sensing device is disclosed which utilizes a temperature sensing circuit which generates a voltage whose level varies linearly in accordance with temperature, this voltage being produced using a pair of MOS field effect transistors which have different values of the ratio Id/K, where Id is drain current and K is the channel pattern ratio of channel width to channel length.
Inventors
- 👤 Shingo Hashimoto
- 👤 Mitsuo Sekine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:49
CPC Classifications
G; G01; G01K; G01K1/00; G01K1/02; G01K1/028; G01K7/00; G01K7/01
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
211 words
A temperature sensing device comprising: temperature sensing circuit means for producing a temperature sensing voltage whose level varies linearly with temperature; reference voltage generating means for producing a reference voltage whose level is independent of temperature; comparator circuit means for comparing said temperature sensing signal and said reference voltage signal and for producing output signals indicative of a difference therebetween; and circuit means responsive to said output signals from said comparator circuit means for producing signals indicative of a temperature value; said temperature sensing voltage circuit means comprising first and second MOS field effect transistors and circuit means for controlling the ratio between the drain currents thereof, said drain currents and the physical configurations of said first and second MOS field effect transistors being arranged such that a ratio of the drain current of said first MOS transistor to the channel pattern ratio of said first MOS transistor is different from a ratio of the drain current of said second MOS transistor to the channel pattern of said second MOS transistor, said temperature sensing circuit means being operative to set the value of said temperature sensing voltage to be directly proportional to the physical quantity kT/q, where k is Boltzmans constant, T is absolute temperature, and q is unit electrical charge.
Claim 2
Dependent Claim
211 words
A temperature sensing device comprising: temperature sensing circuit means for producing a temperature sensing voltage whose level varies linearly with temperature; reference voltage generating means for producing a reference voltage whose level is independent of temperature; comparator circuit means for comparing said temperature sensing signal and said reference voltage signal and for producing output signals indicative of a difference therebetween; and circuit means responsive to said output signals from said comparator circuit means for producing signals indicative of a temperature value; said temperature sensing voltage circuit means comprising first and second MOS field effect transistors and circuit means for controlling the ratio between the drain currents thereof, said drain currents and the physical configurations of said first and second MOS field effect transistors being arranged such that a ratio of the drain current of said first MOS transistor to the channel pattern ratio of said first MOS transistor is different from a ratio of the drain current of said second MOS transistor to the channel pattern of said second MOS transistor, said temperature sensing circuit means being operative to set the value of said temperature sensing voltage to be directly proportional to the physical quantity kT/q, where k is Boltzmans constant, T is absolute temperature, and q is unit electrical charge.
Claim 3
Dependent Claim
150 words
A temperature sensing device according to claim 1, in which said circuit means for controlling the ratio of drain currents of said first and second MOS transistors of said temperature sensing circuit means comprise third and fourth MOS transistors of opposite channel type to said first and second MOS transistors, said third and fourth MOS transistors being connected in series with said first and second MOS transistors respectively, and mutually coupled in a current mirror circuit configuration, the drain and gate electrodes of said third MOS transistor being connected in common to the gate electrode of said fourth MOS transistor, and the drain and gate electrodes of said second MOS transistor being connected in common to the gate electrode of said first MOS transistor, and further comprising a resistor coupled in series with the source electrode of said first MOS transistor, said temperature sensing voltage being developed across said resistor.
Claim 4
Dependent Claim
199 words
A temperature sensing device according to claim 1, in which said circuit xeans for producing signals indicative of a temperature value comprise; a clock pulse signal source for producing clock pulses; a Up/Down counter circuit coupled to receive said clock pulses and said output signals from said comparator circuit means; and a digital-to-analog converter circuit coupled to receive said reference voltage and signals indicative of the count contents of said Up/Down counter circuit; said digital-to-analog converter circuit being operative to produce an output signal to be applied to an input of said comparator circuit means, said output signal being proportional to the count contents of said Up/Down counter circuit and said reference voltage, said output signals from said comparator circuit means being operative to control said Up/Down counter circuit to perform counting up of said clock pulses when said temperature sensing voltage is higher than the level of said digital-to-analog converter circuit output signal and to perform counting down of said clock pulses when the temperature sensing voltage is lower than the level of said analog-to-digital converter circuit output signal, said temperature value indicating signals comprising output signals from said Up/Down counter circuit indicative of the count value therein.
Claim 5
Dependent Claim
34 words
A temperature sensing device according to claim 3, and further comprising display means coupled to receive said output signals from said Up/Down counter circuit and responsive thereto for providing a display of temperature information.
Claim 6
Dependent Claim
40 words
A temperature sensing device according to claim 1, and further comprising linear amplifier circuit means coupled between said temperature sensing circuit means and said comparator circuit means, for amplifying said temperature sensing voltage before input to said ccmparator circuit means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-15 | 1987-11-14 | 1988-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-15 | 1991-11-14 | 1992-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-15 | 1995-11-14 | 1996-05-15 | $7700.00 | Window Closed / Lapsed |