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Patent US4447824A successfully refreshed from Google Patents.
US4447824A
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Planar multi-level metal process with built-in etch stop
Assignee: International Business Machines Corp
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Filing: 1982-09-10
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Granted: 1984-05-08
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Expires: 2002-09-10
Abstract
Abstract Use of a dual composite mask for a lift-off multi-layered structure process in which a base component layer acts as an etch stop for reactive ion etching of overlying layers.
Inventors
- 👤 Joseph S. Logan
- 👤 John L. Mauer, IV
- 👤 Laura B. Rothman
- 👤 Geraldine C. Schwartz
- 👤 Charles L. Standley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:14
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/058; H10W20/40; H10W20/41; H10W20/42; H10W70/00; H10W70/01; H10W70/05
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
104 words
In an integrated circuit package, a substrate having a conductive interconnected pattern on a surface thereof, a superposed conductive structure comprising: (A) a composite layered structure on said substrate comprising (a) a lower layer of an electrically insulating organic polymer overlying said surface and said pattern and (b) a covering oxygen plasma resistant inorganic insulating layer overlying said polymer layer, (B) at least one via opening through said composite layered structure to a portion of said pattern, (C) a second conductive pattern on said inorganic insulating layer, and (D) conductive means in said via opening interconnecting the first said pattern and said second pattern.
Claim 2
Dependent Claim
104 words
In an integrated circuit package, a substrate having a conductive interconnected pattern on a surface thereof, a superposed conductive structure comprising: (A) a composite layered structure on said substrate comprising (a) a lower layer of an electrically insulating organic polymer overlying said surface and said pattern and (b) a covering oxygen plasma resistant inorganic insulating layer overlying said polymer layer, (B) at least one via opening through said composite layered structure to a portion of said pattern, (C) a second conductive pattern on said inorganic insulating layer, and (D) conductive means in said via opening interconnecting the first said pattern and said second pattern.
Claim 3
Dependent Claim
13 words
The structure of claim 1 wherein said inorganic insulating layer is silicon nitride.
Claim 4
Dependent Claim
11 words
The structure of claim 1 wherein said polymer is a polyimide.
Claim 5
Dependent Claim
15 words
The integrated circuit package of claim 1 wherein said substrate is a silicon semiconductor device.
Claim 6
Dependent Claim
17 words
The integrated circuit package of claim 1 wherein said substrate is selected from ceramic and glass-ceramic substrates.
References Cited (Backward Citations)
US3985597A
Cited
US4184909A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-08 | 1987-11-07 | 1988-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-08 | 1991-11-07 | 1992-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-08 | 1995-11-07 | 1996-05-08 | $7700.00 | Window Closed / Lapsed |