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US4447277A
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Multiphase thermoelectric alloys and method of making same
Assignee: Energy Conversion Devices Inc
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Filing: 1982-08-27
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Granted: 1984-05-08
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Expires: 2002-08-27
Abstract
Abstract There is disclosed new and improved multiphase thermoelectric alloys and a method for making the same. The alloys are disordered materials having a multiplicity of matrix crystallites separated by generally disordered grain boundaries containing transitional phases and grain boundary regions of various phases including electrically conductive phases having at least one phase having high electrical conductivity. The alloys are formed from a mixture of at least two separately prepared multiple element compounds preferably a first compound Bi10Sb30Te60 or Bi40Te48Se12 and a second compound Ag25Sb25Te50. These compounds while crystalline, have different crystalline structures. They themselves are polycrystalline and do not represent the most stable crystalline structure. The first compound has a rhombohedral crystalline structure and the second compound has a face centered cubic crystalline structure. The compounds are combined in solid particulate form in proportions of 97 to 99.25 percent Bi10Sb30Te60 and 3 to 0.25 percent Ag25Sb25Te50 or 99 percent Bi40Te48Se12 to 1 percent Ag25Sb25Te50. The mixture is then heated in a quartz tube to an elevated temperature and then drawn through a temperature gradient for cooling. The alloys include in the grain boundary regions various phases of silver and tellurium. The silver containing phases establish low resistance current paths through the crystallites to provide the alloy with high electrical conductivity. The disorder of the grain boundaries and the non-highly electrical conductive phases of the grain boundary regions provide low thermal conductivity desired for thermoelectric applications. Also disclosed are alloys doped with a dopant such as tellurium iodide to form thermoelectric alloys having maximized S2 sigma products.
Inventors
- 👤 Tumkur S. Jayadev
- 👤 On V. Nugyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:56
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/851; H10N10/852; H10N10/853
Claims Analysis
Total Claims: 130
Claim 1
Independent Claim
50 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material comprising: a first phase including a multiplicity of matrix crystallites, said crystallites being separated by macroscopic grain boundary regions containing at least one modifying phase introduced therein to increase the electrical conductivity of said material.
Claim 2
Dependent Claim
50 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material comprising: a first phase including a multiplicity of matrix crystallites, said crystallites being separated by macroscopic grain boundary regions containing at least one modifying phase introduced therein to increase the electrical conductivity of said material.
Claim 3
Dependent Claim
28 words
A material as defined in claim 1 wherein said one modifying phase modifies the matrix of said material by controlling the electrical conductivity independently of said thermal conductivity.
Claim 4
Dependent Claim
20 words
A material as defined in claim 2 comprising a further phase for independently controlling the thermal conductivity of said material.
Claim 5
Dependent Claim
21 words
A material as defined in claim 3 wherein said further phase is adapted to reduce the thermal conductivity of said material.
Claim 6
Dependent Claim
23 words
A material as defined in claim 1 wherein said at least one additional phase includes at least one element having high electrical conductivity.
Claim 7
Dependent Claim
19 words
A material as defined in claim 5 wherein said at least one element having high electrical conductivity is silver.
Claim 8
Dependent Claim
11 words
A material as defined in claim 1 further including a dopant.
Claim 9
Dependent Claim
17 words
A material as defined in claim 7 wherein said dopant is a tellurium iodide (TeI 4 ).
Claim 10
Dependent Claim
20 words
A material as defined in claim 8 wherein said material includes 0.1 percent to 1 percent of said tellurium iodide.
Claim 11
Dependent Claim
18 words
A material as defined in claim 9 wherein said material includes about 0.2 percent of said tellurium iodide.
Claim 12
Dependent Claim
50 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material comprising: a first phase including a multiplicity of matrix crystallites, said crystallites being separated by macroscopic grain boundary regions containing at least one modifying phase introduced therein to reduce the thermal conductivity of said material.
Claim 13
Dependent Claim
50 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material comprising: a first phase including a multiplicity of matrix crystallites, said crystallites being separated by macroscopic grain boundary regions containing at least one modifying phase introduced therein to reduce the thermal conductivity of said material.
Claim 14
Dependent Claim
19 words
A material as defined in claims 1 or 11 wherein said crystallites include at least bismuth, tellurium and antimony.
Claim 15
Dependent Claim
20 words
A material as defined in claims 1 or 11 wherein said grain boundary regions include at least silver and tellurium.
Claim 16
Dependent Claim
22 words
A material as defined in claims 1 or 11 wherein said grain boundary regions include silver and tellurium and multiple phases thereof.
Claim 17
Dependent Claim
20 words
A material as defined in claims 1 or 11 wherein said material includes at least bismuth, tellurium, antimony, and silver.
Claim 18
Dependent Claim
35 words
A material as defined in claim 1 or 11 wherein said material includes about 10 to 20 percent bismuth, about 20 to 30 percent antimony, about 60 percent tellurium and less than 1 percent silver.
Claim 19
Dependent Claim
30 words
A material as defined in claims 1 or 11 further comprising grain boundaries between said matrix crystallites and said grain boundary regions and wherein said grain boundaries includes transitional phases.
Claim 20
Dependent Claim
31 words
A material as defined in claim 17 wherein said transitional phases vary in composition from the composition of said crystallites to the composition of the phases within said grain boundary regions.
Claim 21
Dependent Claim
18 words
A material as defined in claims 1 or 11 wherein said grain boundary regions further include microcrystalline inclusions.
Claim 22
Dependent Claim
22 words
A material as defined in claims 1 or 11 wherein said grain boundary regions vary in dimension up to about three microns.
Claim 23
Dependent Claim
23 words
A material as defined in claims 1 or 11 wherein said matrix crystallites have a width dimension on the order of ten microns.
Claim 24
Dependent Claim
19 words
A material as defined in claims 1 or 11 wherein said material includes at least bismuth, tellurium, and selenium.
Claim 25
Dependent Claim
28 words
A material as defined in claim 22 wherein said material includes about 40 percent bismuth, about 42 to 54 percent tellurium, and about 18 to 6 percent selenium.
Claim 26
Dependent Claim
13 words
A material as defined in claim 23 wherein said material includes a dopant.
Claim 27
Dependent Claim
13 words
A material as defined in claim 24 wherein said dopant is tellurium iodide.
Claim 28
Dependent Claim
18 words
A material as defined in claim 25 wherein said material includes about 0.05 to 0.2 percent tellurium iodide.
Claim 29
Dependent Claim
16 words
A material as defined in claim 26 wherein said material includes about 0.2 percent tellurium iodide.
Claim 30
Dependent Claim
13 words
A material as defined in claim 24 wherein said dopant is cadmium chloride.
Claim 31
Dependent Claim
13 words
A material as defined in claim 22 wherein said material further includes silver.
Claim 32
Dependent Claim
96 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material comprising: a multiplicity of matrix crystallites including at least bismuth, tellurium, and antimony, said crystallites being separated by disordered grain boundaries bordering said crystallites and grain boundary regions between said grain boundaries, said grain boundary regions including a plurality of phases including electrically conductive phases including at least one element having high electrical conductivity, and said grain boundaries including transitional phases varying in composition from the composition of said crystallites to the composition of said phases within said grain boundary regions.
Claim 33
Dependent Claim
96 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material comprising: a multiplicity of matrix crystallites including at least bismuth, tellurium, and antimony, said crystallites being separated by disordered grain boundaries bordering said crystallites and grain boundary regions between said grain boundaries, said grain boundary regions including a plurality of phases including electrically conductive phases including at least one element having high electrical conductivity, and said grain boundaries including transitional phases varying in composition from the composition of said crystallites to the composition of said phases within said grain boundary regions.
Claim 34
Dependent Claim
19 words
A material as defined in claim 30 wherein said at least one element having high electrical conductivity is silver.
Claim 35
Independent Claim
135 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising the steps of: forming a mixture of at least first and second multiple element compounds, at least one of said compounds including at least one element having high electrical conductivity, heating said mixture to an elevated temperature, and thereafter cooling said mixture to form from said mixture of compounds a multiphase solid alloy material differing substantially in macroscopic structure, compositional distribution and thermal and electrical properties from a material formed from the constituent elements of said compounds alone, said multiphase alloy comprising a first phase of a multiplicity of matrix crystallites separated by macroscopic disordered grain boundary regions having at least electrically conductive phases with said at least one element having high electrical conductivity therein.
Claim 36
Independent Claim
135 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising the steps of: forming a mixture of at least first and second multiple element compounds, at least one of said compounds including at least one element having high electrical conductivity, heating said mixture to an elevated temperature, and thereafter cooling said mixture to form from said mixture of compounds a multiphase solid alloy material differing substantially in macroscopic structure, compositional distribution and thermal and electrical properties from a material formed from the constituent elements of said compounds alone, said multiphase alloy comprising a first phase of a multiplicity of matrix crystallites separated by macroscopic disordered grain boundary regions having at least electrically conductive phases with said at least one element having high electrical conductivity therein.
Claim 37
Dependent Claim
26 words
A method as defined in claim 32 comprising the furthur step of annealing said multiphase solid alloy material at about 250° C. for about 20 hours.
Claim 38
Dependent Claim
35 words
A method as defined in claim 32 comprising the further step of preparing said first and second compounds in solid particulate form and wherein said mixture is heated to a temperature of about 650° C.
Claim 39
Dependent Claim
15 words
A method as defined in claim 34 wherein said mixture is cooled to room temperature.
Claim 40
Dependent Claim
20 words
A method as defined in claim 35 wherein said mixture is cooled by drawing said mixture through a temperature gradient.
Claim 41
Dependent Claim
27 words
A method as defined in claim 36 wherein said mixture is drawn at a rate of 30 mm per hour through a temperature gradient of 30° C./cm.
Claim 42
Dependent Claim
22 words
A method as defined in claim 32 wherein said first and second multiple element compounds are crystalline and have different crystalline geometries.
Claim 43
Dependent Claim
28 words
A method as defined in claim 38 wherein one said compound has a face centered cubic crystalline structure and the other said compound has a rhombohedral crystalline structure.
Claim 44
Dependent Claim
18 words
A method as defined in claim 32 wherein said first multiple element compound includes bismuth, antimony, and tellurium.
Claim 45
Dependent Claim
18 words
A method as defined in claim 40 wherein said second multiple element compound includes silver, antimony, and tellurium.
Claim 46
Dependent Claim
26 words
A method as defined in claim 41 wherein said first compound comprises 10 to 20 percent bismuth, 20 to 30 percent antimony, and 60 percent tellurium.
Claim 47
Dependent Claim
22 words
A method as defined in claim 42 wherein said second compound comprises 25 percent silver, 25 percent antimony, and 50 percent tellurium.
Claim 48
Dependent Claim
37 words
A method as defined in claim 43 wherein said first and second compounds are mixed together in the proportion of 97 to 99.75 percent of said first compound with 3 to 0.25 percent of said second compound.
Claim 49
Dependent Claim
27 words
A method as defined in claim 32 further comprising the step of adding a dopant to said first compound prior to forming said mixture of said compounds.
Claim 50
Dependent Claim
16 words
A method as defined in claim 45 wherein said dopant is tellurium iodide (TeI 4 ).
Claim 51
Dependent Claim
23 words
A method as defined in claim 46 wherein between about 0.1 percent to 1 percent tellurium iodide is added to said first compound.
Claim 52
Dependent Claim
19 words
A method as defined in claim 47 wherein about 0.2 percent tellurium iodide is added to said first compound.
Claim 53
Dependent Claim
18 words
A method as defined in claim 32 wherein said first multiple element compound includes bismuth, tellurium, and selenium.
Claim 54
Dependent Claim
18 words
A method as defined in claim 49 wherein said second multiple element compound includes silver, antimony, and tellurium.
Claim 55
Dependent Claim
26 words
A method as defined in claim 51 wherein said first compound includes 40 percent bismuth, 42 to 54 percent tellurium, and 18 to 6 percent selenium.
Claim 56
Dependent Claim
22 words
A method as defined in claim 50 wherein said second compound includes 25 percent silver, 25 percent antimony, and 50 percent tellurium.
Claim 57
Dependent Claim
33 words
A method as defined in claim 52 wherein said first and second compounds are mixed together in the proportions of 99 percent of said first compound with 1 percent of said second compound.
Claim 58
Dependent Claim
27 words
A method as defined in claim 49 further comprising the step of adding a dopant to said first compound prior to forming said mixture of said compounds.
Claim 59
Dependent Claim
13 words
A method as defined in claim 54 wherein said dopant is tellurium iodide.
Claim 60
Dependent Claim
22 words
A method as defined in claim 55 wherein between about 0.05 to 0.20 percent tellurium iodide is added to said first compound.
Claim 61
Dependent Claim
19 words
A method as defined in claim 56 wherein about 0.2 percent tellurium iodide is added to said first compound.
Claim 62
Dependent Claim
13 words
A method as defined in claim 54 wherein said dopant is cadmium chloride.
Claim 63
Independent Claim
88 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising: forming a particulate solid mixture of 97 to 99.75 percent of a first multiple element compound and 3 to 0.25 percent of a second multiple element compound, said first compound comprising Bi 10 Sb 30 Te 60 and said second compound comprising Ag 25 Sb 25 Te 50 ; heating said mixture to an elevated temperature; and thereafter cooling said mixture to form said material in solid form.
Claim 64
Independent Claim
88 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising: forming a particulate solid mixture of 97 to 99.75 percent of a first multiple element compound and 3 to 0.25 percent of a second multiple element compound, said first compound comprising Bi 10 Sb 30 Te 60 and said second compound comprising Ag 25 Sb 25 Te 50 ; heating said mixture to an elevated temperature; and thereafter cooling said mixture to form said material in solid form.
Claim 65
Dependent Claim
23 words
A method as defined in claim 59 wherein said mixture is cooled by the step of drawing said mixture through a temperature gradient.
Claim 66
Dependent Claim
26 words
A method as defined in claim 60 wherein said mixture is drawn at a rate of about 30 mm/hr through a temperature gradient of 30° C./cm.
Claim 67
Dependent Claim
21 words
A method as defined in claim 59 wherein said mixture is heated to a temperature of about 600° to 650° C.
Claim 68
Dependent Claim
28 words
A method as defined in claim 59 comprising the further step of adding a dopant to said Bi 10 Sb 30 Te 60 prior to forming said mixture.
Claim 69
Dependent Claim
13 words
A method as defined in claim 63 wherein said dopant is tellurium iodide.
Claim 70
Dependent Claim
29 words
A method as defined in claim 64 wherein about 0.1 percent to 1 percent of said tellurium iodide is added to said Bi 10 Sb 30 Te 60 .
Claim 71
Dependent Claim
26 words
A method as defined in claim 65 wherein about 0.2 percent of said tellurium iodide is added to said Bi 10 Sb 30 Te 60 .
Claim 72
Dependent Claim
34 words
A method as defined in claim 59 wherein said particulate solid mixture is formed by mixing 99.5 percent Bi 10 Sb 30 Te 60 with 0.5 percent Ag 25 Sb 25 Te 50 .
Claim 73
Dependent Claim
34 words
A method as defined in claim 59 wherein said particulate solid mixture is formed by mixing 99 percent Bi 10 Sb 30 Te 60 with 1 percent Ag 25 Sb 25 Te 50 .
Claim 74
Dependent Claim
34 words
A method as defined in claim 59 wherein said particulate solid mixture is formed by mixing 98.5 percent Bi 10 Sb 30 Te 60 with 1.5 percent Ag 25 Sb 25 Te 50 .
Claim 75
Dependent Claim
34 words
A method as defined in claim 59 wherein said particulate solid mixture is formed by mixing 98 percent Bi 10 Sb 30 Te 60 with 2 percent Ag 25 Sb 25 Te 50 .
Claim 76
Dependent Claim
23 words
A method as defined in claim 59 comprising the further step of annealing said material at about 250° C. for about 20 hours.
Claim 77
Independent Claim
163 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising the steps of: providing a first multiple element compound having a thermal conductivity and an electrical conductivity; providing a second multiple element compound, said second compound including at least one element capable of forming electrically conductive phases with at least one element of said first compound when combined; forming a solid particulate mixture including 97 percent to 99.75 percent of said first compound with 3 percent to 0.25 percent of said second compound; heating said mixture; and thereafter cooling said mixture to form a solid multiphase alloy material, said material having a disordered structure differing substantially from that of a material formed from the constituent elements of said first and second compounds alone, said multiphase alloy also having a thermal conductivity lower than the thermal conductivity of said first compound and an electrical conductivity higher than the electrical conductivity of said first compound.
Claim 78
Independent Claim
163 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising the steps of: providing a first multiple element compound having a thermal conductivity and an electrical conductivity; providing a second multiple element compound, said second compound including at least one element capable of forming electrically conductive phases with at least one element of said first compound when combined; forming a solid particulate mixture including 97 percent to 99.75 percent of said first compound with 3 percent to 0.25 percent of said second compound; heating said mixture; and thereafter cooling said mixture to form a solid multiphase alloy material, said material having a disordered structure differing substantially from that of a material formed from the constituent elements of said first and second compounds alone, said multiphase alloy also having a thermal conductivity lower than the thermal conductivity of said first compound and an electrical conductivity higher than the electrical conductivity of said first compound.
Claim 79
Dependent Claim
177 words
A thermoelectric alloy material comprising a combination of first and second multiple element crystalline compounds having different melting points, said first compound having thermoelectric properties and said second compound having at least two elements capable of forming at least one highly electrically conductive phase when combined such that one element is of higher concentration than the other element, said alloy formed from a mixture of said compounds that has been heated to a temperature equal to or above the melting point of one of said compounds and below the melting point of said other compound and thereafter drawn through a cooling gradient to form from the heated mixture said thermoelectric alloy material in solid form, said alloy differing substantially from an alloy formed from a mixture of the constituent elements of said first and second multiple element crystalline compounds in that said alloy formed from said mixture of said compounds comprises a first phase of a multiplicity of matrix crystallites separated by macroscopic disordered grain boundary regions having at least said one highly electrically conductive phase therein.
Claim 80
Dependent Claim
177 words
A thermoelectric alloy material comprising a combination of first and second multiple element crystalline compounds having different melting points, said first compound having thermoelectric properties and said second compound having at least two elements capable of forming at least one highly electrically conductive phase when combined such that one element is of higher concentration than the other element, said alloy formed from a mixture of said compounds that has been heated to a temperature equal to or above the melting point of one of said compounds and below the melting point of said other compound and thereafter drawn through a cooling gradient to form from the heated mixture said thermoelectric alloy material in solid form, said alloy differing substantially from an alloy formed from a mixture of the constituent elements of said first and second multiple element crystalline compounds in that said alloy formed from said mixture of said compounds comprises a first phase of a multiplicity of matrix crystallites separated by macroscopic disordered grain boundary regions having at least said one highly electrically conductive phase therein.
Claim 81
Dependent Claim
22 words
A thermoelectric alloy material as defined in claim 73 wherein said first compound has a higher melting point than said second compound.
Claim 82
Dependent Claim
19 words
A thermoelectric alloy material as defined in claim 73 wherein said first and second compounds have different crystal structures.
Claim 83
Dependent Claim
18 words
A thermoelectric alloy material as defined in claim 75 wherein said first compound has a rhombohedral crystal structure.
Claim 84
Dependent Claim
18 words
A thermoelectric alloy material as defined in claim 75 wherein said first compound has a diamond crystal structure.
Claim 85
Dependent Claim
22 words
A thermoelectric alloy material as defined in claim 76 or 77 wherein said second compound has a face centered cubic crystal structure.
Claim 86
Dependent Claim
29 words
A thermoelectric alloy material as defined in claim 73 wherein said first compound is at least one compound selected from the group consisting of (Bi,Sb) 2 Te 3 compounds.
Claim 87
Dependent Claim
21 words
A thermoelectric alloy material as defined in claim 79 wherein said first compound is Bi 10 Sb 30 Te 60 .
Claim 88
Dependent Claim
15 words
A thermoelectric alloy material as defined in claim 73 wherein said first compound includes lead.
Claim 89
Dependent Claim
15 words
A thermoelectric alloy material as defined in claim 81 wherein said first compound is PbTe.
Claim 90
Dependent Claim
15 words
A thermoelectric alloy material as defined in claim 73 wherein said first compound is Si-Ge.
Claim 91
Dependent Claim
17 words
A material as defined in claim 73 wherein said first compound has a satisfactory Seebeck coefficient (S).
Claim 92
Dependent Claim
25 words
A thermoelectric alloy material as defined in claim 73 wherein said second compound is a telluride or antimonide of Group IB or IIIB transition metals.
Claim 93
Dependent Claim
27 words
A thermoelectric alloy material as defined in claim 85 wherein said second compound is a binary or ternary telluride or antimonide of silver, gold, thallium, or indium.
Claim 94
Dependent Claim
45 words
A thermoelectric alloy material as defined in claim 86 wherein said second compound is selected from the group consisting of AgTe, Ag 2 Te, InSb, AgSb, AuTe, Au 2 Te, AuSb, Tl 2 Te, TlTe, TlSb, TlSbTe, and Ag 25 Sb 25 Te 50 .
Claim 95
Dependent Claim
22 words
A thermoelectric alloy material as defined in claim 73 wherein said at least one highly electrically conductive phase comprises Ag 2 Te.
Claim 96
Independent Claim
160 words
A method of making a thermoelectric alloy material comprising: (a) forming a mixture of first and second multiple element crystalline compounds having different melting points, said first compound having thermoelectric properties and said second compound having at least two elements capable of forming at least one highly electrically conductive phase when combined such that one element is of higher concentration than the other element; (b) heating said mixture to a temperature equal to or above the melting point of one of said compounds and below the melting point of said other compound to form a melt; and (c) cooling said melt to form said thermoelectric alloy material in solid form which alloy differs substantially from materials formed from the constituent elements of said first and second compounds alone in that said alloy material comprises a first phase of a multiplicity of matrix crystallites separated by macroscopic disordered grain boundary regions having at least said one highly electrically conductive phase therein.
Claim 97
Independent Claim
160 words
A method of making a thermoelectric alloy material comprising: (a) forming a mixture of first and second multiple element crystalline compounds having different melting points, said first compound having thermoelectric properties and said second compound having at least two elements capable of forming at least one highly electrically conductive phase when combined such that one element is of higher concentration than the other element; (b) heating said mixture to a temperature equal to or above the melting point of one of said compounds and below the melting point of said other compound to form a melt; and (c) cooling said melt to form said thermoelectric alloy material in solid form which alloy differs substantially from materials formed from the constituent elements of said first and second compounds alone in that said alloy material comprises a first phase of a multiplicity of matrix crystallites separated by macroscopic disordered grain boundary regions having at least said one highly electrically conductive phase therein.
Claim 98
Dependent Claim
17 words
A method as defined in claim 89 wherein said first and second compounds have different crystal structures.
Claim 99
Dependent Claim
16 words
A method as defined in claim 90 wherein said first compound has a rhombohedral crystal structure.
Claim 100
Dependent Claim
16 words
A method as defined in claim 90 wherein said first compound has a diamond crystal structure.
Claim 101
Dependent Claim
20 words
A method as defined in claim 91 or 92 wherein said second compound has a face centered cubic crystal structure.
Claim 102
Dependent Claim
27 words
A method as defined in claim 89 wherein said first compound is at least one compound selected from the group consisting of (Bi,Sb) 2 Te 3 compounds.
Claim 103
Dependent Claim
19 words
A method as defined in claim 94 wherein said first compound is Bi 10 Sb 30 Te 60 .
Claim 104
Dependent Claim
18 words
A method as defined in claim 89 wherein said first compound is a calcogenide of bismuth and/or antimony.
Claim 105
Dependent Claim
13 words
A method as defined in claim 89 wherein said first compound is Si-Ge.
Claim 106
Dependent Claim
13 words
A method as defined in claim 89 wherein said first compound is PbTe.
Claim 107
Dependent Claim
23 words
A method as defined in claim 89 wherein said second compound is a telluride or antimonide of Group IB or IIIB transition metals.
Claim 108
Dependent Claim
25 words
A method as defined in claim 99 wherein said second compound is a binary or ternary telluride or antimonide of silver, gold, thallium, or indium.
Claim 109
Dependent Claim
43 words
A method as defined in claim 100 wherein said second compound is selected from the group cohsisting of AgTe, Ag 2 Te, InSb, AgSb, AuTe, Au 2 Te, AuSb, Tl 2 Te, TlTe, TlSb, TlSbTe, and Ag 25 Sb 25 Te 50 .
Claim 110
Dependent Claim
19 words
A method as defined in claim 89 wherein said at least one highly conductive phase comprises Ag 2 Te.
Claim 111
Dependent Claim
20 words
A method as defined in claim 89 wherein said melt is cooled by drawing said melt through a temperature gradient.
Claim 112
Independent Claim
84 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising: forming a particulate solid mixture of 99 percent of a first multiple element compound and 1 percent of a second multiple element compound, said first compound comprising Bi 40 Te 42-54 Se 18-6 and said second compound comprising Ag 25 Sb 25 Te 50 ; heating said mixture to an elevated temperature; and thereafter cooling said mixture to form said material in solid form.
Claim 113
Independent Claim
84 words
A method of making a material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said method comprising: forming a particulate solid mixture of 99 percent of a first multiple element compound and 1 percent of a second multiple element compound, said first compound comprising Bi 40 Te 42-54 Se 18-6 and said second compound comprising Ag 25 Sb 25 Te 50 ; heating said mixture to an elevated temperature; and thereafter cooling said mixture to form said material in solid form.
Claim 114
Dependent Claim
23 words
A method as defined in claim 104 wherein said mixture is cooled by the step of drawing said mixture through a temperature gradient.
Claim 115
Dependent Claim
26 words
A method as defined in claim 105 wherein said mixture is drawn at a rate of about 10 mm/hr through a temperature gradient of 30° C./cm.
Claim 116
Dependent Claim
19 words
A method as defined in claim 104 wherein said mixture is heated to a temperature of about 650° C.
Claim 117
Dependent Claim
28 words
A method as defined in claim 104 comprising the further step of adding a dopant to said Bi 40 Te 42-54 Se 18-6 prior to forming said mixture.
Claim 118
Dependent Claim
16 words
A method as defined in claim 108 wherein said dopant is cadmium chloride or tellurium iodide.
Claim 119
Dependent Claim
26 words
A method as defined in claim 109 wherein about 0.2 w/o of said tellurium iodide is added to said Bi 40 Te 42-54 Se 18-6 .
Claim 120
Dependent Claim
41 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material consisting essentially of 10% to 20% bismuth, about 20% to 30% antimony, about 60% tellurium, and silver, said silver being in an amount less than 1%.
Claim 121
Dependent Claim
41 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material consisting essentially of 10% to 20% bismuth, about 20% to 30% antimony, about 60% tellurium, and silver, said silver being in an amount less than 1%.
Claim 122
Dependent Claim
11 words
A material as defined in claim 111 further including a dopant.
Claim 123
Dependent Claim
16 words
A material as defined in claim 112 wherein said dopant is tellurium iodide (TeI 4 ).
Claim 124
Dependent Claim
18 words
A material as defined in claim 113 wherein said material includes 0.1% to 1% of said tellurium iodide.
Claim 125
Dependent Claim
17 words
A material as defined in claim 114 wherein said material includes about 0.2% of said tellurium iodide.
Claim 126
Dependent Claim
42 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material consisting essentially of about 40% bismuth, about 42% to 54% tellurium, about 18% to 6% selenium, and silver, said silver being in an amount less than 1%.
Claim 127
Dependent Claim
42 words
A material for thermoelectric applications having low thermal conductivity and high electrical conductivity, said material consisting essentially of about 40% bismuth, about 42% to 54% tellurium, about 18% to 6% selenium, and silver, said silver being in an amount less than 1%.
Claim 128
Dependent Claim
21 words
A material as defined in claim 116 further including a dopant wherein said material includes about 0.05% to 0.2% tellurium iodide.
Claim 129
Dependent Claim
15 words
A material as defined in claim 117 wherein said material includes about 0.2% tellurium iodide.
Claim 130
Dependent Claim
13 words
A material as defined in claim 116 wherein said dopant is cadmium chloride.
References Cited (Backward Citations)
US2957937A
Cited
US3020326A
Cited
US2995613A
Cited
US3256699A
Cited
US3310493A
Cited
US3228805A
Cited
US3414405A
Cited
USPTO Annuity & Maintenance Windows
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|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-08 | 1987-11-07 | 1988-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-08 | 1991-11-07 | 1992-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-08 | 1995-11-07 | 1996-05-08 | $7700.00 | Window Closed / Lapsed |