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US4446168A
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Method of forming amorphous silicon
Assignee: Stanley Electric Co Ltd
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Filing: 1982-03-29
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Granted: 1984-05-01
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Expires: 2002-03-29
Abstract
Abstract A method of forming, through plasma chemical vapor deposition technique, an amorphous silicon film, one side thereof intended for ohmic contact with specifically an aluminum electrode in a semiconductor device, comprising the steps of: introducing a starting gas containing at least a silicon-containing gas into an evacuated container; and subjecting said gas to plasma chemical vapor deposition through a glow discharge at a power density of 0.3 W/cm 2 or greater. The particular a-Si region thus obtained provides a good ohmic contact with an aluminum electrode which is low in price and in melting point but high in reliability. In case an active a-Si region is desired, it is only necessary to lower the power density to a level below 0.3 W/cm 2 .
Inventors
- 👤 Kazuhisa Kato
- 👤 Hiroyuki Yagami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
102 words
For use in the production on a substrate of a semiconductor device through plasma chemical vapor deposition technique, a method of forming an amorphous silicon film, one side of this film being intended for ohmic contact with a metal electrode to provide an ohmic contact, comprising the steps of: placing said substrate in an evacuated container; introducing a starting gas containing at least a silicon-containing gas into said evacuated container; and subjecting said gas in said chamber to a glow discharge at a power density of substantially 0.3W/cm 2 or greater, thereby causing an amorphous silicon film to deposit onto said substrate.
Claim 2
Dependent Claim
102 words
For use in the production on a substrate of a semiconductor device through plasma chemical vapor deposition technique, a method of forming an amorphous silicon film, one side of this film being intended for ohmic contact with a metal electrode to provide an ohmic contact, comprising the steps of: placing said substrate in an evacuated container; introducing a starting gas containing at least a silicon-containing gas into said evacuated container; and subjecting said gas in said chamber to a glow discharge at a power density of substantially 0.3W/cm 2 or greater, thereby causing an amorphous silicon film to deposit onto said substrate.
Claim 3
Dependent Claim
17 words
A method according to claim 1, in which: said starting gas is silane (SiH 4 ) gas.
Claim 4
Dependent Claim
27 words
A method according to claim 1, in which: said starting gas is a mixed gas consisting of a silane gas and a phosphine (PH 3 ) gas.
Claim 5
Dependent Claim
29 words
A method according to claim 1, in which: said starting gas is a mixed gas consisting of a silane gas and a diborane (B 2 H 6 ) gas.
Claim 6
Dependent Claim
12 words
A method according to claim 1, in which: said metal is aluminum.
Claim 7
Dependent Claim
53 words
A method according to claim 1, in which: said plasma chemical vapor deposition is conducted by the use of an apparatus comprising: an evacuable closed chamber containing therein opposing electrodes operably connected to a power supply and intended for causing a glow discharge, and a substrate placed on one of said opposing electrodes.
Claim 8
Dependent Claim
66 words
A plasma chemical vapor deposition process for forming an amorphous silicon film, wherein the plasma chemical vapor deposition process includes the steps of: introducing a silicon-containing gas into a chamber containing a substrate; and subjecting said gas to glow discharge at a power density of approximately at least 0.3W/cm. 2 or greater, thereby causing formation of said film onto said substrate by plasma chemical vapor deposition.
Claim 9
Dependent Claim
66 words
A plasma chemical vapor deposition process for forming an amorphous silicon film, wherein the plasma chemical vapor deposition process includes the steps of: introducing a silicon-containing gas into a chamber containing a substrate; and subjecting said gas to glow discharge at a power density of approximately at least 0.3W/cm. 2 or greater, thereby causing formation of said film onto said substrate by plasma chemical vapor deposition.
Claim 10
Dependent Claim
21 words
A process for forming a film as described in claim 7, wherein said silicon-containing gas is silicon tetrafluoride (SiF 4 ).
Claim 11
Dependent Claim
18 words
A process for forming film as described in claim 7, wherein said gas contains silane (SiH 4 ).
Claim 12
Dependent Claim
28 words
A process for forming a film as described in claim 7, wherein said process further includes depositing a layer of aluminum on top of said amorphous silicon film.
Claim 13
Dependent Claim
18 words
A process for forming a film as described in claim 10, wherein said gas includes a dopant material.
Claim 14
Dependent Claim
41 words
A method according to claim 1 comprising the further step of: providing a metal electrode atop said amorphous silicon film, said film making good electrical connection between said metal electrode and an active device region of said substrate beneath said film.
Claim 15
Dependent Claim
17 words
A method according to claim 12 wherein said active device region comprises an amorphous silicon active material.
References Cited (Backward Citations)
US4064521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-01 | 1987-10-31 | 1988-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-01 | 1991-10-31 | 1992-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-01 | 1995-10-31 | 1996-05-01 | $7700.00 | Window Closed / Lapsed |