Process for using positive-working resist materials to form negative resist pattern on substrate

Claim 2

A process for forming a negative resist with a desired pattern on a substrate, comprising the steps of: (1) coating on the substrate a resist material consisting of a mixture of a positive-working resist resin which is napthoquinonediazide or benzoquinonediazide and at least one spiropyran compound which is: 1,3,3-trimethyl-6'-nitrospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-nitro-8'-methoxyspiro(indoline-2,2'-benzopyran),

Claim 3

3,3-trimethyl-5'-chloro-6'-nitrospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-bromo-8'-bromospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-methoxy-8'-nitrospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-5'-nitro-8'-methoxy-spiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-8'-carboxyspiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-nitro-8'-hydroxyspiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-hydroxyspiro(indoline-2,2'-benzopyran), 1', 3', 3'-trimethyl-6'-hydroxyspiro(2H-1-benzopyran-2,2'-indoline), 1',3',3'-trimethyl-6'-nitrospiro(2H-1-benzopyran-2,2'-indoline), or 1', 3', 3'-trimethyl-6'-nitro-8'-hydroxy-spiro(2H-1-benzopyran-2,2'-indoline), wherein said at least one spiropyran compound is mixed with the positive-working resist resin in an amount of 1 through 4 parts by weight of said at least one spiropyran compound per 100 parts by weight of the positive-working resist resin; (2) prebaking the coated resist material; (3) exposing the coated resist material to radiation with said desired pattern, so as to allow the exposed part to be selectively hardened in a subsequent heating step; (4) subsequently heating the coated resist material at a temperature of from 95° to 150° C. for time between 5 through 60 minutes, to provide said selective hardening of said exposed part of said coated resist material, so as to render said exposed part insoluble to an alkaline developer for said positive-working resist resin; (5) subsequently subjecting the coated resist material to a blanket exposure by further radiation, so as to decompose the non-exposed part of said coated resist material; and (6) subsequently developing the coated resist material by removing said non-exposed part of said coated resist material with said alkaline developer, so as to form said negative resist with said desired pattern.

Claim 4

3,3-trimethyl-5'-chloro-6'-nitrospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-bromo-8'-bromospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-methoxy-8'-nitrospiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-5'-nitro-8'-methoxy-spiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-8'-carboxyspiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-nitro-8'-hydroxyspiro(indoline-2,2'-benzopyran), 1,3,3-trimethyl-6'-hydroxyspiro(indoline-2,2'-benzopyran), 1', 3', 3'-trimethyl-6'-hydroxyspiro(2H-1-benzopyran-2,2'-indoline), 1',3',3'-trimethyl-6'-nitrospiro(2H-1-benzopyran-2,2'-indoline), or 1', 3', 3'-trimethyl-6'-nitro-8'-hydroxy-spiro(2H-1-benzopyran-2,2'-indoline), wherein said at least one spiropyran compound is mixed with the positive-working resist resin in an amount of 1 through 4 parts by weight of said at least one spiropyran compound per 100 parts by weight of the positive-working resist resin; (2) prebaking the coated resist material; (3) exposing the coated resist material to radiation with said desired pattern, so as to allow the exposed part to be selectively hardened in a subsequent heating step; (4) subsequently heating the coated resist material at a temperature of from 95° to 150° C. for time between 5 through 60 minutes, to provide said selective hardening of said exposed part of said coated resist material, so as to render said exposed part insoluble to an alkaline developer for said positive-working resist resin; (5) subsequently subjecting the coated resist material to a blanket exposure by further radiation, so as to decompose the non-exposed part of said coated resist material; and (6) subsequently developing the coated resist material by removing said non-exposed part of said coated resist material with said alkaline developer, so as to form said negative resist with said desired pattern.

Claim 5

The process of claim 1, comprising less than 2 parts by weight of said spiropyran compound per 100 parts by weight of said positive-working resist resin.

Claim 6

The process of claim 1, wherein the coated resist material is not subjected to a liquid as part of said heating of said coated resist material after said exposing to radiation with said desired pattern.

Claim 7

The process of claim 1, comprising forming said negative resist with said desired pattern with a resolution of as fine as 1 micron line width.

Claim 8

The process according to claim 1, wherein said step of prebaking is carried out at a temperature of from 50° to 110° C. for a period between 5 through 30 minutes.

Claim 9

The process of claim 1, 5 or 4, wherein said radiation of said blanket exposure is of the same type as said radiation of said desired pattern.

Claim 10

The process of claim 6, wherein different doses of said same type of radiation are used for said blanket exposure and said exposing to said desired pattern.

Claim 11

The process of claim 1, 5 or 4, said radiation of said desired pattern and said radiation of said blanket exposure each being selectively electron, gamma, X, ultraviolet, visible and infrared radiation.

Claim 12

The process of claim 8, wherein said radiation of said blanket exposure is of the same type as said radiation of said desired pattern.

Claim 13

The process of claim 9, wherein different doses of said same type of radiation are used for said blanket exposure and said exposing to said desired pattern.