Patent US3301390A successfully refreshed from Google Patents.
US4444615A
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Method for producing a single crystal
Assignee: NGK Insulators Ltd
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Filing: 1981-11-19
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Granted: 1984-04-24
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Expires: 2001-11-19
Abstract
Abstract A single crystal is produced by previously forming a macrocrystal grain having substantially the same crystal structure as crystal grains composing a polycrystal showing a discontinuous crystal grain growth or forming said macrocrystal grain after preparing said polycrystal in contact with the crystal grains composing the polycrystal and heating such a contacted body at a temperature lower than the temperature causing the discontinuous crystal grain growth of the polycrystal to grow crystal while integrating the above described macrocrystal grain with the crystal grains composing the polycrystal whereby a single crystal is grown.
Inventors
- 👤 Soichiro Matsuzawa
- 👤 Syunzo Mase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:48
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/26; C30B29/28; C30B29/30
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
113 words
A method for producing a single crystal, comprising: forming a polycrystal which has a macrocrystal grain therein or thereon, said polycrystal having the property of a discontinuous crystal grain growth which noticeably increases the crystal growing rate at a given temperature in the course of heating, said macrocrystal grain having substantially the same crystal structure as crystal grains comprising said polycrystal; heating said polycrystal having said macrocrystal grain to a temperature lower than the temperature causing discontinuous crystal grain growth of the polycrystal, said heating causing growth of said macrocrystal grain; and during said heating, integrating said macrocrystal grain with the crystal grains of said polycrystal so that a single crystal is grown.
Claim 2
Independent Claim
113 words
A method for producing a single crystal, comprising: forming a polycrystal which has a macrocrystal grain therein or thereon, said polycrystal having the property of a discontinuous crystal grain growth which noticeably increases the crystal growing rate at a given temperature in the course of heating, said macrocrystal grain having substantially the same crystal structure as crystal grains comprising said polycrystal; heating said polycrystal having said macrocrystal grain to a temperature lower than the temperature causing discontinuous crystal grain growth of the polycrystal, said heating causing growth of said macrocrystal grain; and during said heating, integrating said macrocrystal grain with the crystal grains of said polycrystal so that a single crystal is grown.
Claim 3
Dependent Claim
34 words
The method as claimed in claim 1, wherein a polycrystal having a macrocrystal grain is prepared by applying an additive which promotes crystal growth on a surface of a polycrystal and heating the polycrystal.
Claim 4
Dependent Claim
34 words
The method as claimed in claim 1, wherein a polycrystal having a macrocrystal grain is prepared by embedding an additive which promotes crystal growth in powder when shaping the powder into a shaped body.
Claim 5
Dependent Claim
37 words
The method as claimed in claim 1, wherein a polycrystal having a macrocrystal grain is prepared by applying an additive which promotes crystal growth on the surface of a shaped body, and then heating the resulting mass.
Claim 6
Dependent Claim
40 words
The method as claimed in claim 1, wherein a process for forming a macrocrystal grain in contact with crystal grains composing the polycrystal comprises concurrently and integrally sintering a macrocrystal grain together with a shaped body when preparing the polycrystal.
Claim 7
Dependent Claim
41 words
The method as claimed in claim 1, wherein a process for forming a macrocrystal grain in contact with crystal grains composing the polycrystal comprises heating locally the polycrystal at a temperature higher than the temperature causing the discontinuous crystal grain growth.
Claim 8
Dependent Claim
39 words
A method as claimed in claim 1, wherein a process for forming a macrocrystal grain in contact with crystal grains composing the polycrystal comprises forming a projected portion in the polycrystal and heating said polycrystal having a projected portion.
Claim 9
Dependent Claim
35 words
The method as claimed in claim 1, wherein a process for forming a macrocrystal grain in contact with crystal grains composing the polycrystal comprises heating the polycrystal, concurrently locally apply a stress to the polycrystal.
References Cited (Backward Citations)
US3585088A
Cited
US4046618A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-24 | 1987-10-24 | 1988-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-24 | 1991-10-24 | 1992-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-24 | 1995-10-24 | 1996-04-24 | $7700.00 | Window Closed / Lapsed |