Patent US4443808A successfully refreshed from Google Patents.
US4443808A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
•
Filing: 1982-04-02
•
Granted: 1984-04-17
•
Expires: 2002-04-02
Abstract
Abstract A semiconductor device having a high breakdown voltage transistor and a Schottky barrier diode. The Schottky barrier diode is formed in a surface portion of a semiconductor layer adjacent to the base region of the transistor, and a well layer of the same conductivity type as and of a lower impurity concentration that of the aforementioned semiconductor layer is formed under the Schottky barrier diode.
Inventors
- 👤 Kazuo Kihara
- 👤 Masashi Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:50
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D84/101; H10D84/121
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
120 words
A semiconductor device comprising a semiconductor substrate of a first conductivity type, a buried layer of a second conductivity type selectively formed on said semiconductor substrate, a semiconductor layer of the second conductivity type formed on said semiconductor substrate and burried layer, a first diffusion layer of the first conductivity type formed in said semiconductor layer, and a second diffusion layer of the second conductivity type formed in said first diffusion layer, a Schottky barrier diode being formed in a surface region of said semiconductor layer adjacent to said first diffusion region, a well layer of the second conductivity type of a higher impurity concentration than that of said semiconductor layer being formed at least under said Schottky barrier diode.
Claim 2
Dependent Claim
120 words
A semiconductor device comprising a semiconductor substrate of a first conductivity type, a buried layer of a second conductivity type selectively formed on said semiconductor substrate, a semiconductor layer of the second conductivity type formed on said semiconductor substrate and burried layer, a first diffusion layer of the first conductivity type formed in said semiconductor layer, and a second diffusion layer of the second conductivity type formed in said first diffusion layer, a Schottky barrier diode being formed in a surface region of said semiconductor layer adjacent to said first diffusion region, a well layer of the second conductivity type of a higher impurity concentration than that of said semiconductor layer being formed at least under said Schottky barrier diode.
Claim 3
Dependent Claim
28 words
The semiconductor device according to claim 1, wherein said well layer is formed under said Schottky barrier diode and under at least part of said first diffusion region.
Claim 4
Dependent Claim
24 words
The semiconductor device according to claim 1, wherein said well layer is formed to surround said Schottky barrier diode and said first diffusion region.
Claim 5
Dependent Claim
24 words
The semiconductor device according to claim 1, wherein said well layer has such an impurity concentration that said Schottky barrier diode can be formed.
Claim 6
Dependent Claim
23 words
The semiconductor device according to claim 4, wherein the impurity concentration of said well layer is less than 1×10 17 cm -3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-17 | 1987-10-17 | 1988-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-17 | 1991-10-17 | 1992-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-17 | 1995-10-17 | 1996-04-17 | $7700.00 | Window Closed / Lapsed |