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US4443394A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making a silicon nitride body from the Y2 O3 /SiO2 3 N4 /Al2 O3

Assignee: Ceradyne Inc
•
Filing: 1983-07-19
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Granted: 1984-04-17
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Expires: 2003-07-19
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Abstract

Abstract A method is disclosed of making a fully dense silicon nitride comprising object by heating a silicon nitride mixture containing yttrium silicon oxynitride (at least 75% Y 10 Si 6 O 24 N 2 ) to full density without the need for special atmospheres or packing mediums. A reaction bonded silicon nitride/yttrium silicon oxynitride comprising object is fabricated to have the oxynitride present in an amount of 5-17% by weight of the object, free silicon and other oxides in an amount up to 0.5%, and the remainder essentially silicon nitride. The object is heated in an ambient atmosphere to a temperature below the sublimation temperature of silicon nitride and for a period of time to fully densify the object as a result of solution of the silicon nitride into liquified oxynitride, the object being in direct contact with the ambient atmosphere during heating.

Inventors

  • 👤 Andre Ezis

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:28
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 126 words
A method of making a silicon nitride comprising product, by the steps of: (a) fabricating a unitary, porous, reaction bonded object comprising silicon nitride, yttrium silicon oxynitride, and alumino-silicate, said yttrium silicon oxynitride being chemically formed from an SiO 2 component and being present in an amount of 5-17% by weight of said object, said alumino-silicate being present in an amount up to 3% by weight of the object; and (b) heating said object in an ambient atmosphere, without the use of mechanical or gaseous over-pressure to a temperature level below the sublimation temperature of said silicon nitride and for a period of time effective to substantially full densify the object as a result of the solution of said silicon nitride into liquified yttrium silicon oxynitride.
Claim 2
Independent Claim 126 words
A method of making a silicon nitride comprising product, by the steps of: (a) fabricating a unitary, porous, reaction bonded object comprising silicon nitride, yttrium silicon oxynitride, and alumino-silicate, said yttrium silicon oxynitride being chemically formed from an SiO 2 component and being present in an amount of 5-17% by weight of said object, said alumino-silicate being present in an amount up to 3% by weight of the object; and (b) heating said object in an ambient atmosphere, without the use of mechanical or gaseous over-pressure to a temperature level below the sublimation temperature of said silicon nitride and for a period of time effective to substantially full densify the object as a result of the solution of said silicon nitride into liquified yttrium silicon oxynitride.
Claim 3
Dependent Claim 38 words
The method as in claim 1, in which said object may contain free silicon and other oxides up to 0.5% by weight of the object, and said heating is carried out in direct contact with the ambient atmosphere.
Claim 4
Dependent Claim 28 words
The method as in claim 1, in which said yttrium silicon oxynitride consists of at least 75% of the Y 10 Si 6 O 24 N 2 phase.
Claim 5
Dependent Claim 29 words
The method as in claim 1, in which said alumino-silicate is amorphous and resides as a thin coating on the grains of said silicon nitride and yttrium silicon oxynitride.
Claim 6
Dependent Claim 24 words
The method as in claim 1, in which said heating is carried out to a temperature in the range of 1650°-1750° C. (3002°-3182° F.).
Claim 7
Dependent Claim 22 words
The method as in claim 5, in which the heating is carried out at said temperature for a period of 0.5-12 hours.
Claim 8
Dependent Claim 38 words
The method as in claim 1, in which said object is fabricated by compacting silicon and reactive oxygen carrying agents under ambient conditions, and nitriding the compact to a density level of at least 1.9 gm/cm 3 .
Claim 9
Dependent Claim 50 words
The method as in claim 7, in which said oxygen carrying agents consist essentially of 4-12% Y 2 O 3 , 1-4.0% SiO 2 , and 0.75-4.0% and Al 2 O 3 , said percentages being calculated with reference to the silicon as normalized to Si 3 N 4 .
Claim 10
Dependent Claim 37 words
The method as in claim 8, in which said nitriding is carried out in the temperature range of 1093°-1426° C. (2000°-2600° F.) for a period of time sufficient to form the desired amount of yttrium silicon oxynitride.
Claim 11
Dependent Claim 27 words
The method as in claim 1, in which said fabricated unitary object has an alpha/beta ratio of the silicon nitride in the range of 1:10 to 20:1.
Claim 12
Dependent Claim 33 words
The method as in claim 1, in which the resulting product has an average strength level of at least 100,000 psi (70 kg/mm 2 ) in a 4-point bend test at room temperature.
Claim 13
Independent Claim 164 words
A method of making a densified silicon nitride object, comprising: (a) heating a generally homogeneous mixture of powder silicon and reactive oxygen carrying agents in a nitriding atmosphere without the use of pressure normally associated with hot pressing and at a nitriding temperature level of 1093°-1427° C. (2000°-2600° F.) to produce a unitary silicon nitride comprising body consisting essentially of silicon nitride, yttrium silicon oxynitride of the type having an SiO 2 component, said body having a size greater than and a density less than the object to be formed; and (b) without substantially cooling said nitrided body, continuing to heat said unitary silicon nitride comprising body to a temperature level effective to sinter said body without sublimation of the silicon nitride, said heating being carried out in an ambient atmosphere without the use of mechanical or gaseous overpressure, for a period of time to substantially fully densify said body to a substantially sintered beta silicon nitride comprising object of required dimension and density.
Claim 14
Independent Claim 164 words
A method of making a densified silicon nitride object, comprising: (a) heating a generally homogeneous mixture of powder silicon and reactive oxygen carrying agents in a nitriding atmosphere without the use of pressure normally associated with hot pressing and at a nitriding temperature level of 1093°-1427° C. (2000°-2600° F.) to produce a unitary silicon nitride comprising body consisting essentially of silicon nitride, yttrium silicon oxynitride of the type having an SiO 2 component, said body having a size greater than and a density less than the object to be formed; and (b) without substantially cooling said nitrided body, continuing to heat said unitary silicon nitride comprising body to a temperature level effective to sinter said body without sublimation of the silicon nitride, said heating being carried out in an ambient atmosphere without the use of mechanical or gaseous overpressure, for a period of time to substantially fully densify said body to a substantially sintered beta silicon nitride comprising object of required dimension and density.
Claim 15
Dependent Claim 22 words
The method as in claim 12, in which said nitride heating is carried out for a period of at least 200 hours.
Claim 16
Dependent Claim 32 words
The method as in claim 12, in which said heating of step (b) is carried out by said body being directly exposed to said atmosphere without being surrounded by ceramic packing medium.
Claim 17
Dependent Claim 27 words
The method as in claim 12, in which the temperature level of heating in step (b) is carried out at a level of 1650°-1750° C. (3002°-3182° F.).
Claim 18
Dependent Claim 36 words
The method as in claim 12, in which said powder silicon and reactive oxygen carrying agents are cold compacted prior to heating in the nitriding step to a density level of about 1.2 gm/cm 3 .
Claim 19
Dependent Claim 25 words
The method as in claim 12, in which said yttrium silicon oxynitride is devoid of the Y 2 O 3 /Si 3 N 4 phase.

References Cited (Backward Citations)

US3969125A Cited
DE2621523A1 Cited
US4354990A Cited
US4285895A Cited
US4264548A Cited
US4264550A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-04-17 1987-10-17 1988-04-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-04-17 1991-10-17 1992-04-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-04-17 1995-10-17 1996-04-17 $7700.00 Window Closed / Lapsed

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