Abstract Disclosed herein is a process for growing II-IV semiconductor crystals which includes providing both a II-IV semiconductor source material and a crystal growth support member in a predetermined dynamic vacuum. This vacuum is sufficient to create a predetermined overpressure at the source material and simultaneously remove impurities therefrom. The temperature of the support member is initally raised to a predetermined level above the temperature of the source material to thereby prevent vapor transport between the two. Then, the temperature of the support member is lowered to a predetermined value below that of the source material to produce a disassociation of elemental gases from the source material and initiate controlled vapor transport of the elemental gases from the source material to the support member. In this manner, compound semiconductor crystals of high purity and stoichiometry are formed on the surface of the support member.
A process for growing II-VI semiconductor crystals which comprises: (a) providing both a II-VI semiconductor source material and a crystal growth support member in a predetermined dynamic vacuum sufficient to create a predetermined overpressure at said source material and to remove impurities therefrom; (b) raising the temperature of said support member to a predetermined level above the temperature of said source material, thereby preventing vapor transport between the two; and then (c) lowering the temperature of said support member to a predetermined value below that of said source material to produce a dissociation of elemental gases from said source material and initiate controlled vapor transport of said elemental gases from said source material to said support member where said gases deposit in the formation of II-VI compound semiconductor crystals of high purity and stoichiometry.
Claim 2
Dependent Claim
134 words
A process for growing II-VI semiconductor crystals which comprises: (a) providing both a II-VI semiconductor source material and a crystal growth support member in a predetermined dynamic vacuum sufficient to create a predetermined overpressure at said source material and to remove impurities therefrom; (b) raising the temperature of said support member to a predetermined level above the temperature of said source material, thereby preventing vapor transport between the two; and then (c) lowering the temperature of said support member to a predetermined value below that of said source material to produce a dissociation of elemental gases from said source material and initiate controlled vapor transport of said elemental gases from said source material to said support member where said gases deposit in the formation of II-VI compound semiconductor crystals of high purity and stoichiometry.
Claim 3
Dependent Claim
33 words
The process defined in claim 1 wherein said source material is selected from the group of compound semiconductors consisting of zinc sulphide, zinc selenide, zinc telluride, cadmium sulphide, cadmium selenide, and cadmium telluride.