Patent US4438183A successfully refreshed from Google Patents.
US4438183A
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Photoelectrochemical cell having photoanode with thin boron phosphide coating as a corrosion resistant layer
Assignee: United States Department of Energy
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Filing: 1982-08-25
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Granted: 1984-03-20
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Expires: 2002-08-25
Abstract
Abstract A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anitcorrosive, and providing it with unexpectedly improved photoresponsive properties.
Inventors
- 👤 Richard J. Baughman
- 👤 David S. Ginley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:04
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; H01M; H01M14/00; H01M14/005; H01M4/00; Y; Y02; Y02P; Y02P20/00; Y02P20/10; Y02P20/133
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
56 words
In a photoelectrochemical cell device comprising a photoanode, the improvement comprising a film of boron phosphide on said photoanode as a stable photoelectrode layer and as a corrosion resistant protecting film for said photoanode, whereby the surface of said photoanode is rendered resistant to electrocorrosion and photocorrosion and thereby stabilized and simultaneously provided with photoresponse properties.
Claim 2
Dependent Claim
56 words
In a photoelectrochemical cell device comprising a photoanode, the improvement comprising a film of boron phosphide on said photoanode as a stable photoelectrode layer and as a corrosion resistant protecting film for said photoanode, whereby the surface of said photoanode is rendered resistant to electrocorrosion and photocorrosion and thereby stabilized and simultaneously provided with photoresponse properties.
Claim 3
Dependent Claim
11 words
A device according to claim 1, wherein said photoanode comprises silicon.
Claim 4
Dependent Claim
12 words
A device according to claim 1, wherein said photoanode comprises gallium arsenide.
Claim 5
Dependent Claim
12 words
A device according to claim 1, wherein said photoanode comprises gallium phosphide.
Claim 6
Dependent Claim
22 words
A device according to claim 1, wherein said boron phosphide film is at least sufficiently thick to have no detectable pinholes therein.
Claim 7
Dependent Claim
19 words
A device according to claim 5, wherein said boron phosphide film is about 2000 Å to 5000 Å thick.
Claim 8
Dependent Claim
14 words
A device according to claim 1 wherein said boron phosphide film is CVD grown.
Claim 9
Dependent Claim
11 words
A device according to claim 1 wherein said photoanode is n-Si.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-20 | 1987-09-19 | 1988-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-20 | 1991-09-19 | 1992-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-20 | 1995-09-19 | 1996-03-20 | $7700.00 | Window Closed / Lapsed |