US4438154A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating an amorphous silicon film
Assignee: Stanley Electric Co Ltd
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Filing: 1982-04-28
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Granted: 1984-03-20
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Expires: 2002-04-28
Abstract
Abstract In the method of forming an amorphous silicon film on a substrate supported on an electrode facing a discharging electrode within an evacuated reaction chamber through decomposition of a reacting gas introduced therein and containing at least silicon hydride such as SiH4 along with or without a doping impurity gas, by glow dicharging developed across the facing electrodes through application of a high frequency (radio frequency) electric power the oppose across, the improvement wherein: the power density of the electric power applied for glow discharging is so set that the ratio of the electric power relative to the discharging surface area of the discharging electrode is 0.3 W/cm2 or greater, and the ratio F/V of the total flow rate F (l/min.) relative to the volume V (l) of the reaction chamber is 0.01 min.-1 or greater. The resulting a-Si film has a high resistivity in darkness and a large photosensitivity which are suitable for electrophotography.
Inventors
- 👤 Kazuhisa Kato
- 👤 Masaru Yasui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:15
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
169 words
A method of forming an amorphous silicon film photosensitive receptor surface adapted for electrophotography, said method comprising the steps of: (1) into an evacuated reaction chamber containing a discharge electrode, a substrate onto which said amorphous silicon film is to be deposited facing said discharge electrode, and a second electrode supporting said substrate, a reaction gas containing silicon hydride, introducing a gas into said reaction chamber at a rate such that the ratio (F/V) of the total flow rate (F) in liters per minute of gas introduced relative to the volume in liters (V) of said reaction chamber is at least 0.01 min -1 ; in combination with (2) supplying a high frequency power across the facing electrodes in said chamber such that the power density, determined by the ratio of the supplied electric power relative to the discharge electrode's surface area, is at least 0.3 W/cm 2 , thereby causing decomposition of said reaction gas and deposition of an amorphous silicon film on said substrate by glow discharge.
Claim 2
Independent Claim
169 words
A method of forming an amorphous silicon film photosensitive receptor surface adapted for electrophotography, said method comprising the steps of: (1) into an evacuated reaction chamber containing a discharge electrode, a substrate onto which said amorphous silicon film is to be deposited facing said discharge electrode, and a second electrode supporting said substrate, a reaction gas containing silicon hydride, introducing a gas into said reaction chamber at a rate such that the ratio (F/V) of the total flow rate (F) in liters per minute of gas introduced relative to the volume in liters (V) of said reaction chamber is at least 0.01 min -1 ; in combination with (2) supplying a high frequency power across the facing electrodes in said chamber such that the power density, determined by the ratio of the supplied electric power relative to the discharge electrode's surface area, is at least 0.3 W/cm 2 , thereby causing decomposition of said reaction gas and deposition of an amorphous silicon film on said substrate by glow discharge.
Claim 3
Dependent Claim
41 words
A method according to claim 1, wherein: said reaction gas is one selected from the group consisting of SiH 4 , Si 2 H 6 , SiH 4 plus H 2 , and Si 2 H 6 plus H 2 .
Claim 4
Dependent Claim
24 words
A method according to claim 2, wherein: said decomposition of the reaction gas is carried out in the presence of a doping impurity gas.
Claim 5
Dependent Claim
34 words
A method according to claim 3, wherein: said doping impurity gas is selected from the group consisting of B 2 H 6 , B 4 H 10 , AsH 3 and PH 3 .
Claim 6
Dependent Claim
35 words
A method according to claim 1, wherein: said reaction gas is introduced into said reaction chamber along with a gas selected from the group consisting of N 2 , NH 3 and O 2 .
Claim 7
Dependent Claim
14 words
A method according to claim 1, wherein: said high frequency is a radio frequency.
References Cited (Backward Citations)
US4369205A
Cited
US4363828A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-20 | 1987-09-19 | 1988-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-20 | 1991-09-19 | 1992-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-20 | 1995-09-19 | 1996-03-20 | $7700.00 | Window Closed / Lapsed |