Patent US4435897A successfully refreshed from Google Patents.
US4435897A
Expired / Lapsed
US
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Method for fabricating solid-state image sensor
Assignee: Panasonic Holdings Corp
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Filing: 1981-11-12
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Granted: 1984-03-13
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Expires: 2001-11-12
Abstract
Abstract In the fabrication of a solid-state image sensor of the type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity, excessive charge drain regions each provided with a plurality of first electrodes and second electrodes which function as a gate for controlling the drain of excessive charge, impurities or dopants of the other conductivity are introduced immediately below each of the regions at which the first electrodes are to be formed; thereafter, the first and second electrodes are formed; and impurities or dopants which are same as the above-described impurities or dopants are introduced while using the first and second electrodes as a masking pattern, whereby the photoelectric transducer means and drain regions are formed.
Inventors
- 👤 Takao Kuroda
- 👤 Kenju Horii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:31
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
237 words
A method for the fabrication of a solid-state image sensor of the charge-coupled type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity type, a corresponding plurality of excessive charge drain regions coupled to respective ones of said transducer means, and a plurality of first electrodes and second electrodes which function as gate electrodes overlying corresponding channels coupled between said transducer means and said excessive charge drain regions for controlling the discharge of excessive charge from each of said transducer means to the corresponding excessive charge drain region, said method comprising the steps of: forming channel stopper regions by introducing impurities of the same conductivity type as the substrate into each zone where a channel is situated and into each zone where a corresponding excessive charge drain region is situated, said impurities being introduced from the zones where each first electrode and each second electrode are situated, and introducing impurities with conductivity type opposite to that of the substrate into the excessive charge drain region of the zone where each first electrode is formed; forming said first electrodes and said second electrodes on a surface of said substrate overlying corresponding channels; and introducing conductivity-type-determining impurities into the surface of said substrate upon which said first and second electrodes are formed, using said electrodes as a diffusion mask, to form said excessive charge drain regions and said photoelectric transducer means in said substrate.
Claim 2
Independent Claim
237 words
A method for the fabrication of a solid-state image sensor of the charge-coupled type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity type, a corresponding plurality of excessive charge drain regions coupled to respective ones of said transducer means, and a plurality of first electrodes and second electrodes which function as gate electrodes overlying corresponding channels coupled between said transducer means and said excessive charge drain regions for controlling the discharge of excessive charge from each of said transducer means to the corresponding excessive charge drain region, said method comprising the steps of: forming channel stopper regions by introducing impurities of the same conductivity type as the substrate into each zone where a channel is situated and into each zone where a corresponding excessive charge drain region is situated, said impurities being introduced from the zones where each first electrode and each second electrode are situated, and introducing impurities with conductivity type opposite to that of the substrate into the excessive charge drain region of the zone where each first electrode is formed; forming said first electrodes and said second electrodes on a surface of said substrate overlying corresponding channels; and introducing conductivity-type-determining impurities into the surface of said substrate upon which said first and second electrodes are formed, using said electrodes as a diffusion mask, to form said excessive charge drain regions and said photoelectric transducer means in said substrate.
References Cited (Backward Citations)
US4173064A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-13 | 1987-09-12 | 1988-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-13 | 1991-09-12 | 1992-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-13 | 1995-09-12 | 1996-03-13 | $7700.00 | Window Closed / Lapsed |