US4432092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1981-06-04
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Granted: 1984-02-14
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Expires: 2001-06-04
Abstract
Abstract A very narrow current injection region (16'') is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16'') and a shallower part (16'), and the deeper part (16'') can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).
Inventors
- 👤 Iwao Teramoto
- 👤 Takashi Sugino
- 👤 Kunio Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:37
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2054; H01S5/2059; H01S5/2202; H01S5/223; H01S5/2231
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
133 words
In a semiconductor laser the combination comprising: a semiconductor substrate having thereon semiconductor epitaxial layers including an active layer, a current limiting layer overriding the uppermost layer of said semiconductor epitaxial layers and having an opposite conductivity to that of said uppermost layer, a stripe-shaped impurity diffused region having an impurity of opposite type to that of said current limiting layer, wherein said current limiting layer is terrace-shaped having a thinner part and a thicker part with a step inbetween, and said stripe-shaped impurity diffused region is disposed substantially over said step, thereby making said diffused region have a deeper part of a narrower width than that of said stripe-shaped impurity diffused region and a shallower part, a diffusion front of said deeper part remaining in a layer neighboring on said active layer.
Claim 2
Dependent Claim
133 words
In a semiconductor laser the combination comprising: a semiconductor substrate having thereon semiconductor epitaxial layers including an active layer, a current limiting layer overriding the uppermost layer of said semiconductor epitaxial layers and having an opposite conductivity to that of said uppermost layer, a stripe-shaped impurity diffused region having an impurity of opposite type to that of said current limiting layer, wherein said current limiting layer is terrace-shaped having a thinner part and a thicker part with a step inbetween, and said stripe-shaped impurity diffused region is disposed substantially over said step, thereby making said diffused region have a deeper part of a narrower width than that of said stripe-shaped impurity diffused region and a shallower part, a diffusion front of said deeper part remaining in a layer neighboring on said active layer.
Claim 3
Dependent Claim
22 words
A semiconductor laser in accordance with claim 1, wherein a diffusion front of said shallower part remains in said current limiting layer.
Claim 4
Dependent Claim
40 words
A semiconductor laser in accordance with claim 1, wherein width of said deeper part is substantially defined as the width of such part of said stripe-shaped impurity diffused region that lies in the thinner part of said current limiting layer.
Claim 5
Dependent Claim
124 words
In a semiconductor laser the combination comprising: a semiconductor substrate having thereon semiconductor epitaxial layers including an active layer, a current limiting layer overriding the uppermost layer of said semiconductor epitaxial layers and having an opposite conductivity to that of said uppermost layer, a stripe-shaped impurity diffused region having an impurity of opposite type to that of said current limiting layer, wherein said current limiting layer is terrace-shaped with a step, and said stripe-shaped impurity diffused region is disposed substantially over said step, thereby making said diffused region have a deeper part of a narrower width than that of said stripe-shaped impurity diffused region and a shallower part, a diffusion front of said deeper part remaining in a layer neighboring on said active layer.
Claim 6
Dependent Claim
124 words
In a semiconductor laser the combination comprising: a semiconductor substrate having thereon semiconductor epitaxial layers including an active layer, a current limiting layer overriding the uppermost layer of said semiconductor epitaxial layers and having an opposite conductivity to that of said uppermost layer, a stripe-shaped impurity diffused region having an impurity of opposite type to that of said current limiting layer, wherein said current limiting layer is terrace-shaped with a step, and said stripe-shaped impurity diffused region is disposed substantially over said step, thereby making said diffused region have a deeper part of a narrower width than that of said stripe-shaped impurity diffused region and a shallower part, a diffusion front of said deeper part remaining in a layer neighboring on said active layer.
References Cited (Backward Citations)
US3916339A
Cited
US4122410A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |