US3916339A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Asymmetrically excited semiconductor injection laser
Assignee: RCA Corp
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Filing: 1974-11-25
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Granted: 1975-10-28
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Expires: 1994-11-25
Abstract
Abstract A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region.
Inventors
- 👤 Ivan Ladany
- 👤 Donald Paul Marinelli
- 👤 Henry Kressel
- 👤 Vincent Michael Cannuli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:49
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0425; H01S5/04256; H01S5/20; H01S5/22; H01S5/223; H01S5/0421; H01S5/30; H01S5/305
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
177 words
A semiconductor injection laser comprising: a right parallelepiped body composed of single crystalline semiconductor material, said body having two opposed side surfaces, a first and a second surface, and two opposed end surfaces which are partially reflective so as to provide a Fabry-Perot cavity; said body having a first region of one conductivity type material, extending along said first surface, a second region of the opposite conductivity type material contiguous with said first region and extending along the second surface, and a third region running from one end surface to the other end surface spaced from the side surfaces and extending from the second surface into the second region for less than the full depth of the second region, said third region being of the same conductivity type as the second region but having a higher conductivity; an electrical contact stripe on the second surface extending between the two end surfaces, said contact stripe overlaps a portion of the width of both the second and third regions; and an electrically conductive layer applied to the first surface.
Claim 2
Dependent Claim
177 words
A semiconductor injection laser comprising: a right parallelepiped body composed of single crystalline semiconductor material, said body having two opposed side surfaces, a first and a second surface, and two opposed end surfaces which are partially reflective so as to provide a Fabry-Perot cavity; said body having a first region of one conductivity type material, extending along said first surface, a second region of the opposite conductivity type material contiguous with said first region and extending along the second surface, and a third region running from one end surface to the other end surface spaced from the side surfaces and extending from the second surface into the second region for less than the full depth of the second region, said third region being of the same conductivity type as the second region but having a higher conductivity; an electrical contact stripe on the second surface extending between the two end surfaces, said contact stripe overlaps a portion of the width of both the second and third regions; and an electrically conductive layer applied to the first surface.
Claim 3
Dependent Claim
21 words
The laser as in claim 1 wherein said contact stripe is equal in width to the width of said third region.
Claim 4
Dependent Claim
18 words
The laser in claim 1 wherein said contact stripe overlaps one half the width of said third region.
Claim 5
Dependent Claim
88 words
The laser as in claim 1 wherein: the first region is comprised of a substrate extending along said first surface, a first layer contiguous with said substrate, and a second layer extending between said first layer and the interface between said first and second regions, said second layer having a narrower energy bandgap width than said first layer; and said second region comprising a third layer extending along the interface between said first and second regions, and a fourth layer extending along a portion of the second surface.
Claim 6
Dependent Claim
29 words
The laser as in claim 4 wherein said third region extends from said second surface for a depth of between one-third to one-half the depth of said fourth layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |