US4429011A
Expired / Lapsed
US
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Composite conductive structures and method of making same
Assignee: Intersil Corp
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Filing: 1982-03-29
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Granted: 1984-01-31
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Expires: 2002-03-29
Abstract
Abstract A composite conductive structure which includes an insulating substrate on which is provided a conductor of molybdenum covered by a layer of molybdenum nitride and a method of making the structure are described. The method includes heating the conductor of molybdenum in an atmosphere of ammonia in the range from about 400° C. to 850° C. for a time to cause the atmosphere to react with the conductor to convert a portion of the conductor into molybdenum nitride.
Inventors
- 👤 Manjin J. Kim
- 👤 Tat-Sing P. Chow
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:42
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/665; H10D64/666; C; C23; C23C; C23C8/00; C23C8/06; C23C8/08; C23C8/24; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/01322; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
86 words
A method of forming a composite structure comprising: providing a substrate, patterning said layer of molybdenum to form a conductor by sputtering in a desired depositing a layer of molybdenum on said substrate, heating said substrate including said conductor of molybdenum in an atmosphere including ammonia at a temperature in the range from about 400° C. to 850° C. for a time to cause said atmosphere to react with said conductor to convert at least a portion of said conductor into a layer of molybdenum nitride.
Claim 2
Independent Claim
86 words
A method of forming a composite structure comprising: providing a substrate, patterning said layer of molybdenum to form a conductor by sputtering in a desired depositing a layer of molybdenum on said substrate, heating said substrate including said conductor of molybdenum in an atmosphere including ammonia at a temperature in the range from about 400° C. to 850° C. for a time to cause said atmosphere to react with said conductor to convert at least a portion of said conductor into a layer of molybdenum nitride.
Claim 3
Dependent Claim
71 words
The method of claim 1 in which said substrate including said conductor of molybdenum is heated in an atmosphere including ammonia at a temperature in the range from about 400° C. to 750° C. for a time to cause said atmosphere to react with said conductor of molybdenum to convert at least a portion of said conductor of molybdenum into a layer of molybdenum nitride having the composition Mo 2 N.
Claim 4
Dependent Claim
73 words
The method of claim 1 in which said substrate including said conductor of molybdenum is heated in an atmosphere including ammonia at a temperature in the range from about 750° C. to 850° C. for a time to cause said atmosphere to react with said conductor of molybdenum to convert at least a portion of said conductor of molybdenum into a layer of molybdenum nitride including the constituents Mo 2 N and MoN.
Claim 5
Dependent Claim
18 words
The method of claim 1 in which said atmosphere consists of ammonia and a relatively inert carrier gas.
Claim 6
Dependent Claim
14 words
The method of claim 4 in which said relatively inert carrier gas is nitrogen.
Claim 7
Dependent Claim
25 words
The method of claim 4 in which said relatively inert carrier gas is a gas selected from the group consisting of argon, helium and neon.
Claim 8
Dependent Claim
26 words
The method of claim 1 in which the concentration of ammonia in said atmosphere is less than about 10% by volume with the remainder being nitrogen.
Claim 9
Dependent Claim
15 words
The method of claim 1 in which said substrate is constituted of an insulating material.
Claim 10
Dependent Claim
15 words
The method of claim 1 in which said substrate is constituted of a semiconductor material.
Claim 11
Dependent Claim
15 words
The method of claim 1 in which said substrate is constituted of a conductive material.
Claim 12
Dependent Claim
30 words
The method of claim 1 in which said substrate includes a layer of semiconductor material having an overlying layer of insulating material on which said conductor of molybdenum is formed.
Claim 13
Dependent Claim
12 words
The method of claim 11 in which said semiconductor material is silicon.
Claim 14
Dependent Claim
13 words
The method of claim 11 in which said insulating material is silicon dioxide.
Claim 15
Dependent Claim
24 words
The method of claim 11 in which said insulating material is constituted of a layer of silicon nitride overlying a layer of silicon dioxide.
Claim 16
Dependent Claim
19 words
The method of claim 11 in which said insulating material is a composite of silicon dioxide and silicon nitride.
Claim 17
Dependent Claim
19 words
The method of claim 1 in which said layer of molybdenum is deposited by sputtering molybdenum on said substrate.
Claim 18
Dependent Claim
83 words
In combination, a substrate, a patterened conductive layer of molybdenum overlying said substrate, said conductor being formed by sputtering molybdenum on said substrate, a layer of molybdenum nitride overlying the exposed surfaces of said conductor, said layer of molybdenum nitride being formed by heating said conductor in an atmosphere including ammonia at a temperature in the range from about 400° C. to 850° C. for a time to cause said atmosphere to react with said conductor to form said layer of molybdenum nitride.
Claim 19
Dependent Claim
83 words
In combination, a substrate, a patterened conductive layer of molybdenum overlying said substrate, said conductor being formed by sputtering molybdenum on said substrate, a layer of molybdenum nitride overlying the exposed surfaces of said conductor, said layer of molybdenum nitride being formed by heating said conductor in an atmosphere including ammonia at a temperature in the range from about 400° C. to 850° C. for a time to cause said atmosphere to react with said conductor to form said layer of molybdenum nitride.
Claim 20
Dependent Claim
13 words
The combination of claim 17 in which said substrate is an insulating layer.
Claim 21
Dependent Claim
13 words
The combination of claim 18 in which said insulating material is silicon dioxide.
Claim 22
Dependent Claim
12 words
The combination of claim 17 in which said substrate is a semiconductor.
Claim 23
Dependent Claim
11 words
The combination of claim 20 in which said substrate is silicon.
Claim 24
Dependent Claim
15 words
The combination of claim 17 in which said substrate is constituted of a conductive material.
Claim 25
Dependent Claim
12 words
The combination of claim 22 in which said conductive material is platinum.
Claim 26
Dependent Claim
12 words
The combination of claim 22 in which said conductive material is titanium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-30 | 1987-08-01 | 1988-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-30 | 1991-08-01 | 1992-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-30 | 1995-08-01 | 1996-01-31 | $7700.00 | Window Closed / Lapsed |