US3200015A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for coating high temperature alloys
Assignee: RTX Corp
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Filing: 1962-09-10
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Granted: 1965-08-10
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Expires: 1982-09-10
Abstract
No abstract record available.
Inventors
- 👤 Urban E Kuntz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:53
CPC Classifications
C; C23; C23C; C23C28/00; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
182 words
A METHOD FOR PRODUCING A THIN, ADHERENT, NONPOROUS, OXIDATION AND CORROSION RESISTANT PYROLYTIC SILICON NITRIDE COATING ON A BASE METAL THAT IS A MEMBER SELECTED FROM THE GROUP CONSISTING OF NICKEL BASE REFRACTORY ALLOYS, COBALT BASE REFRACTORY ALLOYS, AND COLUMBIUM BASE ALLOYS, WHICH COMPRISES CONTACTING A HOT SURFACE OF THE BASE METAL AT A TEMPERATURE WITHIN A FIRST RANGE OF BETWEEN ABOUT 875* AND 1150*C. WITH A GASEOUS MIXTURE COMPRISING METAL HALIDE AND NITROGEN, SAID METAL HALIDE BEING CAPABLE OF REACTING WITH NITROGEN WITHIN THE FIRST TEMPERATURE RANGE TO FORM A SOLID METAL NITRIDE DEPOSIT UPON SAID HOT SURFACE, AND THEN CONTACTING THE HOT SURFACE AT A TEMPERATURE WITHIN A SECOND RANGE OF BETWEEN 875* AND 1200*C. WITH A GASEOUS MIXTURE COMPRISING SILICON HALIDE AND AMMONIA, SAID SILICON HALIDE BEING CAPABLE OF REACTING WITH AMMONIA TO DEPOSIT ADDITIONAL SILICON NITRIDE ON SAID HOT SURFACE; THE TEMPERATURE OF CONTACT BEING CONTROLLED WITHIN BOTH THE FIRST AND THE SECOND TEMPERATURE RANGES SUCH THAT THE SILICON NITRIDE FORMED ADHERES TO THE HOT SURFACE DURING CONTACT OF EACH OF SAID GASEOUS MIXTURES WITH THE HOT SURFACE.
Claim 2
Independent Claim
182 words
A METHOD FOR PRODUCING A THIN, ADHERENT, NONPOROUS, OXIDATION AND CORROSION RESISTANT PYROLYTIC SILICON NITRIDE COATING ON A BASE METAL THAT IS A MEMBER SELECTED FROM THE GROUP CONSISTING OF NICKEL BASE REFRACTORY ALLOYS, COBALT BASE REFRACTORY ALLOYS, AND COLUMBIUM BASE ALLOYS, WHICH COMPRISES CONTACTING A HOT SURFACE OF THE BASE METAL AT A TEMPERATURE WITHIN A FIRST RANGE OF BETWEEN ABOUT 875* AND 1150*C. WITH A GASEOUS MIXTURE COMPRISING METAL HALIDE AND NITROGEN, SAID METAL HALIDE BEING CAPABLE OF REACTING WITH NITROGEN WITHIN THE FIRST TEMPERATURE RANGE TO FORM A SOLID METAL NITRIDE DEPOSIT UPON SAID HOT SURFACE, AND THEN CONTACTING THE HOT SURFACE AT A TEMPERATURE WITHIN A SECOND RANGE OF BETWEEN 875* AND 1200*C. WITH A GASEOUS MIXTURE COMPRISING SILICON HALIDE AND AMMONIA, SAID SILICON HALIDE BEING CAPABLE OF REACTING WITH AMMONIA TO DEPOSIT ADDITIONAL SILICON NITRIDE ON SAID HOT SURFACE; THE TEMPERATURE OF CONTACT BEING CONTROLLED WITHIN BOTH THE FIRST AND THE SECOND TEMPERATURE RANGES SUCH THAT THE SILICON NITRIDE FORMED ADHERES TO THE HOT SURFACE DURING CONTACT OF EACH OF SAID GASEOUS MIXTURES WITH THE HOT SURFACE.
Claim 3
Dependent Claim
45 words
THE METHOD OF CLAIM 1 WHEREIN THE BASE METAL IS A MEMBER SELECTED FROM THE GROUP CONSISTING OF NICKEL AND COBALT BASE REFRACTORY ALLOYS, AND WHEREIN THE HOT SURFACE OF THE ALLOY CONTACTED WITH THE MIXTURE OF METAL HALIDE AND NITROGEN CONTAINS AN OXIDE FILM.
Claim 4
Dependent Claim
34 words
THE METHOD OF CLAIM 13 WHEREIN THE OXIDE FILM IS FORMED ON SAID HOT SURFACE BY CONTACTING THE HOT SURFACE WITH AIR PRIOR TO SUBJECTING IT TO THE MIXTURE OF METAL HALIDE AND NITROGEN.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-08-09 | 1969-02-08 | 1969-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-08-09 | 1973-02-08 | 1973-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-08-09 | 1977-02-08 | 1977-08-10 | $7700.00 | Window Closed / Lapsed |