US4426234A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing
Assignee: Toshiba Corp
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Filing: 1981-12-03
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Granted: 1984-01-17
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Expires: 2001-12-03
Abstract
Abstract The invention discloses a method for fabricating a semiconductor device comprising the steps of: forming, on an entire surface of a semiconductor substrate of one conductivity type, a first thin film of a diffusion coefficient greater than a diffusion coefficient of the substrate; forming, on an entire surface of the first thin film, a second thin film having a diffusion coefficient smaller than the diffusion coefficient of the first thin film; ion-implanting an impurity through the second thin film into the first thin film to form an impurity region, said impurity having a conductivity type opposite to the conductivity type of the substrate; and effecting annealing to set a junction depth of the impurity region to a predetermined value. According to the method of the invention, an impurity region having a desired sheet resistivity and a desired diffusion depth can be formed in the semiconductor substrate with excellent reproducibility and control. The formation of the lattice defect can be prevented and the carrier life time can be improved. Gallium is preferably used as the impurity according to the invention.
Inventors
- 👤 Jiro Ohshima
- 👤 Yutaka Koshino
- 👤 Takashi Ajima
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:57
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/40; H10P30/20; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P32/20
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
105 words
A method for fabricating a semiconductor device comprising the steps of: a. forming, on a surface of a silicon substrate, a first thin film having a gallium diffusion coefficient greater than the gallium diffusion coefficient of said substrate; b. forming on a surface of said first thin film, a second thin film having a gallium diffusion coefficient smaller than said gallium diffusion coefficient of said first thin film; c. ion-implanting gallium through said second thin film into said first thin film to form a P-type impurity region; and d. effecting annealing to set a junction depth of said P-type impurity region to a predetermined value.
Claim 2
Independent Claim
105 words
A method for fabricating a semiconductor device comprising the steps of: a. forming, on a surface of a silicon substrate, a first thin film having a gallium diffusion coefficient greater than the gallium diffusion coefficient of said substrate; b. forming on a surface of said first thin film, a second thin film having a gallium diffusion coefficient smaller than said gallium diffusion coefficient of said first thin film; c. ion-implanting gallium through said second thin film into said first thin film to form a P-type impurity region; and d. effecting annealing to set a junction depth of said P-type impurity region to a predetermined value.
Claim 3
Dependent Claim
57 words
A method according to claim 1, wherein said first thin film is a member selected from the group consisting of silicon dioxide film, silicon oxynitride film, and polycrystalline silicon film, and said second thin film is a member selected from the group consisting of silicon nitride film, aluminum oxide film, silicon carbonide film, and silicon oxynitride film.
Claim 4
Dependent Claim
14 words
A method according to claim 1 wherein said substrate has an N conductivity type.
Claim 5
Independent Claim
105 words
A method for fabricating a semiconductor device comprising the steps of: a. forming, on a surface of a silicon substrate, a first thin film having an aluminum diffusion coefficient greater than the aluminum diffusion coefficient of said substrate; b. forming, on a surface of said first thin film, a second thin film having an aluminum diffusion coefficient smaller than said aluminum diffusion coefficient of said first thin film; c. ion implanting aluminum through said second thin film into said first thin film to form a P-type impurity region; and d. affecting annealing to set a depth of said P-type impurity region to a predetermined value.
Claim 6
Independent Claim
105 words
A method for fabricating a semiconductor device comprising the steps of: a. forming, on a surface of a silicon substrate, a first thin film having an aluminum diffusion coefficient greater than the aluminum diffusion coefficient of said substrate; b. forming, on a surface of said first thin film, a second thin film having an aluminum diffusion coefficient smaller than said aluminum diffusion coefficient of said first thin film; c. ion implanting aluminum through said second thin film into said first thin film to form a P-type impurity region; and d. affecting annealing to set a depth of said P-type impurity region to a predetermined value.
Claim 7
Dependent Claim
57 words
A method according to claim 4, wherein said first thin film is a member selected from the group consisting of silicon dioxide film, silicon oxynitride film, and polycrystalline silicon film, and said second thin film is a member selected from the group consisting of silicon nitride film, aluminum oxide film, silicon carbonide film, and silicon oxynitride film.
Claim 8
Dependent Claim
13 words
A method according to claim 4 wherein said substrate has N conductivity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-16 | 1987-07-18 | 1988-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-16 | 1991-07-18 | 1992-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-16 | 1995-07-18 | 1996-01-17 | $7700.00 | Window Closed / Lapsed |