Patent US4424101A successfully refreshed from Google Patents.
US4424101A
Expired / Lapsed
US
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Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques
Assignee: Applied Biosystems Inc
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Filing: 1982-08-11
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Granted: 1984-01-03
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Expires: 2002-08-11
Abstract
Abstract A method of depositing refractory metal silicides in a sputtering system on one or more substrates in an environment which supports a glow discharge from a pair of targets at an energy level sufficient to co-sputter and deposit the material from the targets onto the substrate(s). The method includes either a RF high voltage to be applied to one of the targets, or a DC voltage in the presence of a magnetic field to be applied to both targets so as to deposit silicon, either doped or pure, and refractory metal, either doped or pure, as the case may be, to provide a thin film of doped refractory metal silicide on the substrate(s).
Inventors
- 👤 Ronald S. Nowicki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:23
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3464; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
96 words
A method of sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes each having a sputtering surface within a low pressure working gas environment, one of which has a sputtering surface comprising a material doped with a selected dopant; applying a DC voltage in the presence of a magnetic field to at least one of said target electrodes; and supporting within said gaseous environment said substrate means intended to be sputter coated to thereby coat said substrate means with material from said target electrodes.
Claim 2
Independent Claim
96 words
A method of sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes each having a sputtering surface within a low pressure working gas environment, one of which has a sputtering surface comprising a material doped with a selected dopant; applying a DC voltage in the presence of a magnetic field to at least one of said target electrodes; and supporting within said gaseous environment said substrate means intended to be sputter coated to thereby coat said substrate means with material from said target electrodes.
Claim 3
Dependent Claim
16 words
The method as claimed in claim 1 wherein said doped material is an insulator made conductive.
Claim 4
Dependent Claim
27 words
The method as claimed in claim 2 wherein said doped material comprises silicon doped with said dopant, and wherein the other sputtering surface comprises a refractory metal.
Claim 5
Dependent Claim
20 words
The method as claimed in claim 3 wherein the DC voltage is applied to the electrode having the silicon surface.
Claim 6
Dependent Claim
24 words
The method as claimed in claim 4 wherein the DC voltage is also applied to the electrode having the sputtering surface of refractory metal.
Claim 7
Dependent Claim
22 words
The method as claimed in claim 4 wherein the voltage applied to the electrode having the surface of refractory metal is RF.
Claim 8
Dependent Claim
20 words
The method as claimed in claim 3 further including the step of applying a bias voltage to said substrate means.
Claim 9
Dependent Claim
29 words
The method as claimed in claim 1 wherein the other sputtering surface comprises pure silicon and the voltage applied to the target electrode having said silicon surface is RF.
Claim 10
Dependent Claim
20 words
The method as claimed in claim 8 further including the step of applying a bias voltage to said substrate means.
Claim 11
Dependent Claim
47 words
The method as claimed in claim 1 wherein said doped sputtering surface comprises doped refractory metal and the other sputtering surface comprises pure silicon and the voltage applied to the doped surface electrode is DC and the voltage applied to the pure silicon surface electrode is RF.
Claim 12
Dependent Claim
44 words
The method as claimed in claim 1 wherein said doped sputtering surface is doped silicon and the other of said sputtering surfaces comprises a refractory metal and the voltage applied to both said target electrodes is DC in the presence of a magnetic field.
Claim 13
Dependent Claim
20 words
The method as claimed in claim 11 further including the step of applying a bias voltage to said substrate means.
Claim 14
Independent Claim
96 words
A method of co-sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes within a low pressure working gas environment, providing a sputtering surface of pure silicon on one of said electrodes and applying an RF voltage to said electrode, providing a sputtering surface of refractory metal on the other electrode and applying a DC voltage in the presence of a magnetic field thereto, and supporting said substrate means within said gaseous environment to thereby coat said substrate means with material from said sputtering surfaces.
Claim 15
Independent Claim
96 words
A method of co-sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes within a low pressure working gas environment, providing a sputtering surface of pure silicon on one of said electrodes and applying an RF voltage to said electrode, providing a sputtering surface of refractory metal on the other electrode and applying a DC voltage in the presence of a magnetic field thereto, and supporting said substrate means within said gaseous environment to thereby coat said substrate means with material from said sputtering surfaces.
Claim 16
Independent Claim
101 words
A method of co-sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes with a low pressure working gas environment, providing a sputtering surface of doped silicon on one of said electrodes and applying an RF voltage to said electrode, providing a sputtering surface of refractory metal on the other electrode and applying either a DC voltage in the presence of a magnetic field or an RF voltage thereto, and supporting said substrate means within said gaseous environment to thereby coat said substrate means with material from said sputtering surfaces.
Claim 17
Independent Claim
101 words
A method of co-sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes with a low pressure working gas environment, providing a sputtering surface of doped silicon on one of said electrodes and applying an RF voltage to said electrode, providing a sputtering surface of refractory metal on the other electrode and applying either a DC voltage in the presence of a magnetic field or an RF voltage thereto, and supporting said substrate means within said gaseous environment to thereby coat said substrate means with material from said sputtering surfaces.
Claim 18
Independent Claim
108 words
A method of co-sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes within a low pressure working gas environment, providing a sputtering surface of doped silicon on one of said electrodes and applying a DC voltage in the presence of a magnetic field to said electrode, providing a sputtering surface of refractory metal on the other electrode and applying either a DC voltage in the presence of a magnetic field or an RF voltage thereto, and supporting said substrate means within said gaseous environment to thereby coat said substrate means with material from said sputtering surfaces.
Claim 19
Independent Claim
108 words
A method of co-sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes within a low pressure working gas environment, providing a sputtering surface of doped silicon on one of said electrodes and applying a DC voltage in the presence of a magnetic field to said electrode, providing a sputtering surface of refractory metal on the other electrode and applying either a DC voltage in the presence of a magnetic field or an RF voltage thereto, and supporting said substrate means within said gaseous environment to thereby coat said substrate means with material from said sputtering surfaces.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-02 | 1987-07-04 | 1988-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-02 | 1991-07-04 | 1992-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-02 | 1995-07-04 | 1996-01-03 | $7700.00 | Window Closed / Lapsed |