Abstract A process for forming a fluoroalkyl acrylate polymer film on a substrate by plasma polymerization. The fluoroalkyl acrylate polymer film has a high sensitivity to high energy rays and an excellent resolving power, and is very useful as a resist film. The plasma polymerized film of the invention has little pinholes, and is endurable to dry etching. A patterned resist film is prepared by irradiating the film with high energy rays to form a latent pattern and developing the latent pattern by either a wet process using a solvent or an oxygen or oxygen-containing gas plasma etching. Also, a pattern can be formed in the film by only electron beam irradiation. The pattern formation can be attained by electron beam delineation without development treatment. The pattern formation by electron beam delineation is promoted by heat treating the delineated film at a temperature not less than the glass transition temperature of the polymer under reduced pressure or by treating the delineated film with hydrogen or an inert gas plasma.
A process for forming a patterned resist film on a substrate which comprises (a) forming a film of a polymer on a substrate by polymerizing a fluoroalkyl acrylate having the following general formula: R.sub.f R.sup.2 OCOCR.sup.1 ═CH.sub.2 wherein R 1 is a C 1 to C 15 straight or branched perfluoroalkyl group or a C 1 to C 15 straight or branched perfluoroalkyl group in which at least one of the fluorine atoms is substituted by hydrogen atom and which has at least one fluorine atom, R 1 is hydrogen atom, methyl group, ethyl group or a halogen atom, and R 2 is a bivalent hydrocarbon group, by the action of an inert gas excited by flow discharge in the presence of a substrate, (b) radiating high energy rays to the film to form a latent pattern, and (c) developing the latent pattern.
Claim 2
Dependent Claim
143 words
A process for forming a patterned resist film on a substrate which comprises (a) forming a film of a polymer on a substrate by polymerizing a fluoroalkyl acrylate having the following general formula: R.sub.f R.sup.2 OCOCR.sup.1 ═CH.sub.2 wherein R 1 is a C 1 to C 15 straight or branched perfluoroalkyl group or a C 1 to C 15 straight or branched perfluoroalkyl group in which at least one of the fluorine atoms is substituted by hydrogen atom and which has at least one fluorine atom, R 1 is hydrogen atom, methyl group, ethyl group or a halogen atom, and R 2 is a bivalent hydrocarbon group, by the action of an inert gas excited by flow discharge in the presence of a substrate, (b) radiating high energy rays to the film to form a latent pattern, and (c) developing the latent pattern.
Claim 3
Dependent Claim
15 words
The process of claim 1, wherein the latent pattern is developed by a plasma etching.
Claim 4
Dependent Claim
40 words
The process of claim 1, wherein the developing is carried out by heating the film irradiated by high energy rays at a temperature of not less than the glass transition temperature of the polymer constituting the film under reduced pressure.
Claim 5
Dependent Claim
29 words
The process of claim 1, wherein the developing is carried out by treating the film irradiated by high energy rays with a plasma of hydrogen or an inert gas.