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US4420367A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for etching a recrystallized aluminum foil for electrolytic capacitors

Assignee: Siemens AG
•
Filing: 1982-04-15
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Granted: 1983-12-13
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Expires: 2002-04-15
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Abstract

Abstract Method for etching a recrystallized aluminum foil for electrolytic capacitors by carrying out an electrolytic tunnel formation in a first etching stage, characterized by the feature that the further etching for tunnel enlargement takes place chemically in one or several etching stages.

Inventors

  • 👤 Gunter Locher

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 13:56
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/004; H01G9/04; H01G9/048; H01G9/055; C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/20; C25; C25F; C25F3/00; C25F3/02; C25F3/04

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 71 words
Method for etching a recrystallized aluminum foil for electrolytic capacitors which comprises subjecting the recrystallized aluminum foil in a first etching stage to electrolytic tunnel formation to form a tunnel structure in the aluminum, and subsequently subjecting the aluminum foil with the tunnel structure from the first etching stage in at least one further non-electrolytic etching stage in a solution free of halogen ions to effect tunnel enlargement by chemical etching.
Claim 2
Dependent Claim 71 words
Method for etching a recrystallized aluminum foil for electrolytic capacitors which comprises subjecting the recrystallized aluminum foil in a first etching stage to electrolytic tunnel formation to form a tunnel structure in the aluminum, and subsequently subjecting the aluminum foil with the tunnel structure from the first etching stage in at least one further non-electrolytic etching stage in a solution free of halogen ions to effect tunnel enlargement by chemical etching.
Claim 3
Dependent Claim 16 words
Method according to claim 1, wherein the tunnel formation is carried out with constant anode potential.
Claim 4
Dependent Claim 27 words
Method according to claim 1, wherein the tunnel formtion is carried out with a current density which approaches the current density course in time for potentiostatic etching.
Claim 5
Dependent Claim 35 words
Method according to claim 1 or claim 2 or claim 3, wherein the further non-electrolytic etching takes place in said solution free of halogen ions maintained within the range of 40° C. to 95° C.
Claim 6
Dependent Claim 23 words
Method according to claim 1 or claim 2 or claim 3, wherein the further non-electrolytic etching takes place with solutions containing nitrate ions.
Claim 7
Dependent Claim 37 words
Method according to claim 1 or claim 2 or claim 3, wherein the further non-electrolytic etching takes place with solutions containing a nitrate selected from the group consisting of HNO 3 and Al(NO 3 ) 3 .
Claim 8
Dependent Claim 66 words
Method according to claim 1 or claim 2 or claim 3, wherein the further non-electrolytic etching takes place with solutions containing a nitrate selected from the group consisting of HNO 3 and Al(NO 3 ) 3 , and in which the concentration of the solutions are 1% by weight to 30% by weight HNO 3 and 0.2 mol/liter to 2 mol/liter Al(NO 3 ) 3 .
Claim 9
Dependent Claim 25 words
Method according to claim 1, wherein the further non-electrolytic etching is carried out in several baths with Al dissolution rates which are reduced in steps.
Claim 10
Dependent Claim 22 words
Method according to claim 8, wherein the stepwise reduction of the Al dissolution rate is accomplished with bath temperatures reduced in steps.
Claim 11
Dependent Claim 22 words
Method according to claim 8, wherein the stepwise reduction of the Al dissolution rate is accomplished with both concentrations reduced in steps.

References Cited (Backward Citations)

US2193711A Cited
US2699382A Cited
US2755237A Cited
US3666642A Cited
US3779877A Cited
US4213835A Cited
DE2801218C3 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1986-12-12 1987-06-13 1987-12-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1990-12-12 1991-06-13 1991-12-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1994-12-12 1995-06-13 1995-12-13 $7700.00 Window Closed / Lapsed

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