Thyristor having a controllable emitter short circuit

Claim 2

In a semiconductor thyristor of the type wherein an outer n-emitter carries a first electrode, an outer p-emitter carries a second electrode, a p-base and an n-base are between and respectively adjacent the emitters, and a controllable emitter short circuit is provided, the improvement therein comprising: a junction field effect transistor for controlling the emitter short circuit, said field effect transistor comprising a semiconductor zone in one of the emitters doped opposite to that emitter, a gate electrode carried on said zone, a first portion of said one emitter below said zone constituting a channel zone for said field effect transistor and second and third portions of said one emitter constituting the drain and source of the field effect transistor, the respective electrode contacting said second portion of said one emitter, and a conductive coating connecting said third portion of said one emitter with the adjacent one of said bases.

Claim 3

The improved thyristor of claim 1, wherein the first electrode is a cathode and the second electrode is an anode.

Claim 4

The improved thyristor of claim 1, and further comprising: a trigger electrode carried on said one base.

Claim 5

The improved thyristor of claim 1, and further comprising: an emitter gate electrode carried on said one emitter for receiving a trigger pulse.

Claim 6

The improved thyristor of claim 4, wherein: said gate electrode and said emitter gate are connected in common.

Claim 7

The improved thyristor of claim 1, including a radiation source which is in optical contact with said one emitter for triggering.

Claim 8

The improved thyristor of claim 1, including a radiation source which is in optical contact with said one adjacent base for triggering.

Claim 9

The improved thyristor of claim 1, wherein: said one emitter is sub-divided into a plurality of emitter zones each having said first, second and third portions, a respective oppositely-doped semiconductor zone therein, a respective conductive coating, a respective gate electrode on a respective zone, and a respective emitter electrode on each of said emitter zones, said emitter electrodes connected in common and said gate electrodes connected in common.

Claim 10

The improved thyristor of claim 8, wherein: each of said emitter zones have a longitudinally-extended shape; and said emitter zones extend substantially parallel to one another.

Claim 11

The improved thyristor of claim 8, wherein: each of said emitter zones have a longitudinally-extended shape; and said emitter zones are annular and concentric.

Claim 12

In a method of operating a semiconductor thyristor of the type in which an outer n-emitter carries a first electrode, an outer p-emitter carries a second electrode, a p-base and an n-base are disposed between and respectively adjacent said emitters, and in which a controllable emitter short circuit is provided and controlled by a junction field effect transistor which comprises a semiconductor zone in and doped opposite to one of the emitters, a gate electrode carried on the zone, a first portion of the one emitter below the zone constituting a channel for the field effect transistor and second and third portions of the one emitter laterally adjacent to the zone constituting a source and a drain, in which the respective emitter electrode is carried by the source or drain portions, and in which a conductive coating contacts the one emitter and the adjacent base, the improvement therein comprising the step of: applying a voltage pulse to the gate electrode to switch the thyristor from the blocked condition into the current-conducting condition.

Claim 13

In a method of operating a semiconductor thyristor of the type in which an outer n-emitter carries a first electrode, an outer p-emitter carries a second electrode, a p-base and an n-base are disposed between and respectively adjacent said emitters, and in which a controllable emitter short circuit is provided and controlled by a junction field effect transistor which comprises a semiconductor zone in and doped opposite to one of the emitters, a gate electrode carried on the zone, a first portion of the one emitter below the zone constituting a channel for the field effect transistor and second and third portions of the one emitter laterally adjacent to the zone constituting a source and a drain, in which the respective emitter electrode is carried by the source or drain portions, and in which a conductive coating contacts the one emitter and the adjacent base, the improvement therein comprising the step of: applying a voltage pulse to the gate electrode to switch the thyristor from the blocked condition into the current-conducting condition.

Claim 14

The improved method of claim 11, including applying a further voltage pulse to the gate to switch the thyristor from the current-conducting condition to the blocked condition by compensating a bias voltage applied to said gate which effects a blocking of the channel.