US3700982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controlled rectifier having gate electrode which extends across the gate and cathode layers
Assignee: Infineon Technologies Americas Corp
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Filing: 1968-12-12
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Granted: 1972-10-24
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Expires: 1988-12-12
Abstract
Abstract To permit high rate-of-rise-of-current in a controlled rectifier, the gate electrode extends from the emitter region across the uppermost junction and into contact with the opposite conductivity region under the cathode electrode. When a positive pulse is applied to the gate, the cathode region adjacent the gate is less negatively charged than it would otherwise be if placed conventionally on the P region only. This will reduce current concentration at the emitter edge adjacent to the gate region so that a greater rate-of-rise-of-current is permissible. A groove is interposed between the gate and cathode electrode providing a means of adjusting the impedance between both. This permits limiting of excessive gate-cathode currents through the joining N emitter layer.
Inventors
- 👤 Harold Weinstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:29
CPC Classifications
H; H10; H10D; H10D99/00; H10D64/00; H10D64/20; H10D64/27
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
150 words
A controlled rectifier comprising a wafer of semiconductor material having first, second, third and fourth layers of alternating conductivity types sequentially disposed one atop the other throughout the thickness of said wafer, and continuous along the length thereof to form first, second and third vertically disposed junctions in said wafer along the coincidence surfaces of said layers; an anode electrode connected to the bottom surface of said first layer; a cathode electrode connected to the top surface of said fourth layer; and a gate electrode spaced from said cathode electrode having a first portion connected to said top surface of said fourth layer and a second portion integral with said first portion extending across the junction between said third and fourth layers and connected to the top surface of said third layer for reducing current concentration adjacent said gate electrode to increase the rateof-rise-of-current upon the firing of said rectifier.
Claim 2
Dependent Claim
150 words
A controlled rectifier comprising a wafer of semiconductor material having first, second, third and fourth layers of alternating conductivity types sequentially disposed one atop the other throughout the thickness of said wafer, and continuous along the length thereof to form first, second and third vertically disposed junctions in said wafer along the coincidence surfaces of said layers; an anode electrode connected to the bottom surface of said first layer; a cathode electrode connected to the top surface of said fourth layer; and a gate electrode spaced from said cathode electrode having a first portion connected to said top surface of said fourth layer and a second portion integral with said first portion extending across the junction between said third and fourth layers and connected to the top surface of said third layer for reducing current concentration adjacent said gate electrode to increase the rateof-rise-of-current upon the firing of said rectifier.
Claim 3
Dependent Claim
28 words
The device of claim 1 which includes a groove extending into said fourth layer and interposed between said second portion of said gate electrode and said cathode electrode.
Claim 4
Dependent Claim
26 words
The device of claim 1 wherein said cathode electrode extends across said junction between said third and fourth layers and is connected to said third layer.
Claim 5
Dependent Claim
29 words
The device as set forth in claim 1 wherein said gate electrode has a ring shape and surrounds said cathode electrode; said gate electrode and cathode electrode being coplanar.
Claim 6
Dependent Claim
27 words
The device as set forth in claim 5 which includes an annular groove in said fourth layer radially disposed between said cathode electrode and said ring-shaped gate.
Claim 7
Dependent Claim
29 words
The device as set forth in claim 1 wherein said cathode electrode has a ring shape and surrounds said gate electrode; said cathode electrode and gate electrode being coplanar.
Claim 8
Dependent Claim
27 words
The device as set forth in claim 6 which includes an annular groove in said fourth layer radially disposed between said ring-shaped cathode electrode and said gate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |