Patent US4419336A successfully refreshed from Google Patents.
US4419336A
Expired / Lapsed
US
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Silicon carbide production and furnace
Assignee: Saint Gobain Abrasives Inc
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Filing: 1982-03-29
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Granted: 1983-12-06
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Expires: 2002-03-29
Abstract
Abstract An improved acheson furnace structure is shown having insulated gate means for increasing the volume of coarsely crystalline silicon carbide produced in each cycle of the furnace together with a reduction in the volume of fire sand required to be recycled whereby to improve the efficiency of the furnace.
Inventors
- 👤 Areekattuthazhayil K. Kuriakose
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:13
CPC Classifications
H; H05; H05B; H05B3/00; H05B3/60; C; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C01B32/963; C01B32/97; C01P; C01P2006/00; C01P2006/80
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
A method of making a larger percentage of coarsely crystalline silicon carbide in an Acheson furnace comprising packing the silica and coke ingredients forming a reaction mix around a centrally disposed resistive element heat source while confining the mix between gates that hold the mix in an insulated zone surrounding said source, supplying current to said source for raising the temperature within the mass to about 1800° C. for reacting all of the ingredients in the mix between the heat source and the gates to form finely crystalline silicon carbide, and then increasing the crystal size of the silicon carbide in the reacted mass by increasing the temperature of the reacted mass between the heat source and the gates to a temperature between 2000° C. to 2500° C.
Claim 2
Independent Claim
128 words
A method of making a larger percentage of coarsely crystalline silicon carbide in an Acheson furnace comprising packing the silica and coke ingredients forming a reaction mix around a centrally disposed resistive element heat source while confining the mix between gates that hold the mix in an insulated zone surrounding said source, supplying current to said source for raising the temperature within the mass to about 1800° C. for reacting all of the ingredients in the mix between the heat source and the gates to form finely crystalline silicon carbide, and then increasing the crystal size of the silicon carbide in the reacted mass by increasing the temperature of the reacted mass between the heat source and the gates to a temperature between 2000° C. to 2500° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-05 | 1987-06-06 | 1987-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-05 | 1991-06-06 | 1991-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-05 | 1995-06-06 | 1995-12-06 | $7700.00 | Window Closed / Lapsed |