Method of fabricating screen lens array plates

Claim 1

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) exposing by photolithographic techniques a predetermined pattern on both sides of the silicon wafer; (d) indiffusing in conjunction with vapor transfer techniques a boron layer into both sides of the wafer to a depth of about 10 microns to a concentration greater than about 7×10 19 atoms/cm 3 ; and (e) anisotropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 2

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) exposing by photolithographic techniques a predetermined pattern on both sides of the silicon wafer; (d) indiffusing in conjunction with vapor transfer techniques a boron layer into both sides of the wafer to a depth of about 10 microns to a concentration greater than about 7×10 19 atoms/cm 3 ; and (e) anisotropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 3

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) exposing by electron beam lithographic techniques a predetermined pattern on both sides of the silicon wafer; (d) indiffusing in conjunction with vapor transfer techniques a boron layer into both sides of the wafer to a depth of about 10 microns to a concentration greather than about 7×10 19 atoms/cm 3 ; and (e) anisotropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 4

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) exposing by electron beam lithographic techniques a predetermined pattern on both sides of the silicon wafer; (d) indiffusing in conjunction with vapor transfer techniques a boron layer into both sides of the wafer to a depth of about 10 microns to a concentration greather than about 7×10 19 atoms/cm 3 ; and (e) anisotropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 5

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) applying a thin, uniform layer of negative resist to both sides of the silicon wafer; (d) exposing by photolithographic techniques a predetermined pattern on both sides of the silicon wafer; (e) developing the resulting resist pattern; (f) etching away the exposed oxide; (g) removing the remaining photoresist; (h) depositing boron for about 3 hours at about 1200° C. on each of the wafer/oxide surfaces; (i) indiffusing in conjunction with vapor transfer techniques the boron layer into both sides of the wafer to a depth of about 10 microns at a concentration greater than about 7×10 19 atoms/cm 3 in the areas not protected by the remaining oxide; (j) etching away the remaining oxide; and (k) anistropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 6

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) applying a thin, uniform layer of negative resist to both sides of the silicon wafer; (d) exposing by photolithographic techniques a predetermined pattern on both sides of the silicon wafer; (e) developing the resulting resist pattern; (f) etching away the exposed oxide; (g) removing the remaining photoresist; (h) depositing boron for about 3 hours at about 1200° C. on each of the wafer/oxide surfaces; (i) indiffusing in conjunction with vapor transfer techniques the boron layer into both sides of the wafer to a depth of about 10 microns at a concentration greater than about 7×10 19 atoms/cm 3 in the areas not protected by the remaining oxide; (j) etching away the remaining oxide; and (k) anistropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 7

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) applying a thin, uniform layer of negative resist to both sides of the silicon wafer; (d) exposing by electron beam lithographic techniques a predetermined pattern on both sides of the silicon wafer; (e) developing the resulting resist pattern; (f) etching away the exposed oxide; (g) removing the remaining photoresist; (h) depositing boron for about 3 hours at about 1200° C. on each of the wafer/oxide surfaces; (i) indiffusing in conjunction with vapor transfer techniques the boron layer into both sides of the wafer to a depth of about 10 microns at a concentration greater than about 7×10 19 atoms/cm 3 in the areas not protected by the remaining oxide; (j) etching away the remaining oxide; and (k) anisotropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.

Claim 8

A method of fabricating screen lens array plates from round, silicon wafers of about 0.5 mm thickness comprising the steps of: (a) polishing both sides of a silicon wafer; (b) oxidizing both sides of the silicon wafer to produce a high density, low porosity oxide coating having a thickness of about 2 microns; (c) applying a thin, uniform layer of negative resist to both sides of the silicon wafer; (d) exposing by electron beam lithographic techniques a predetermined pattern on both sides of the silicon wafer; (e) developing the resulting resist pattern; (f) etching away the exposed oxide; (g) removing the remaining photoresist; (h) depositing boron for about 3 hours at about 1200° C. on each of the wafer/oxide surfaces; (i) indiffusing in conjunction with vapor transfer techniques the boron layer into both sides of the wafer to a depth of about 10 microns at a concentration greater than about 7×10 19 atoms/cm 3 in the areas not protected by the remaining oxide; (j) etching away the remaining oxide; and (k) anisotropically etching the silicon wafer until said predetermined pattern has been formed through the thickness of the wafer.