US4417386A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for mounting a semiconductor device in a housing
Assignee: Siemens AG
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Filing: 1980-12-22
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Granted: 1983-11-29
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Expires: 2000-12-22
Abstract
Abstract Method and apparatus for mounting a semiconductor device in a housing, which includes first providing a metallization on a part of the surface of the semiconductor body of the semiconductor device to be connected to the housing, subsequently permanently connecting the semiconductor body to a part of the housing being in the form of a substrate with an organic adhesive to which metal particles have been added, and connecting electrodes of the semiconductor device to terminals disposed in the housing.
Inventors
- 👤 Klaus D. Exner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:41
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W20/00; H10W20/40; H10W72/073; H10W72/07331; H10W72/30; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/353; H10W72/354
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
101 words
Method of mounting a semiconductor device in a housing, which comprises first providing a chromium layer on a part of the surface of the monocrystalline silicon semiconductor body of the semiconductor device to be connected to the housing, covering the chromium layer with a silver layer, subsequently permanently connecting the sliver layer on the chromium layer on the monocrystalline silicon semiconductor body to a part of the housing being in the form of a substrate with an adhesive to which silver particles have been added, and connecting electrodes of the semiconductor device with wire connections to terminals disposed in the housing.
Claim 2
Dependent Claim
101 words
Method of mounting a semiconductor device in a housing, which comprises first providing a chromium layer on a part of the surface of the monocrystalline silicon semiconductor body of the semiconductor device to be connected to the housing, covering the chromium layer with a silver layer, subsequently permanently connecting the sliver layer on the chromium layer on the monocrystalline silicon semiconductor body to a part of the housing being in the form of a substrate with an adhesive to which silver particles have been added, and connecting electrodes of the semiconductor device with wire connections to terminals disposed in the housing.
Claim 3
Dependent Claim
13 words
Method according to claim 1, which comprises using Z-silicone adhesive as the adhesive.
Claim 4
Dependent Claim
26 words
Method according to claim 1 or 2, which comprises applying the silver layer by one of the groups of steps consisting of vapor deposition and sputtering.
Claim 5
Dependent Claim
15 words
Method according to claim 3, which comprises providing the silver layer at an elevated temperature.
Claim 6
Dependent Claim
13 words
Method according to claim 3, which comprises providing silicon as the semiconductor body.
Claim 7
Dependent Claim
24 words
Method according to claim 5, which comprises applying the chromium layer by one of the groups of steps consisting of vapor deposition and sputtering.
Claim 8
Dependent Claim
83 words
Method according to claim 6, which comprises providing monocrystalline silicon as the semiconductor body, reducing the thickness of the semiconductor body by grinding the rear side thereof, subsequently applying the chromium as an intermediate metallic layer in vapor deposition equipment, subsequently applying the silver metallization on the chromium layer, using a heat-conducting material as the substrate, connecting the rear side of the semiconductor body after deposition and grinding to the heat-conducting substrate with the adhesive, and subsequently hardening the adhesive by heat treatment.
Claim 9
Dependent Claim
20 words
Method according to claim 7, which comprises adjusting the metal content of the adhesive to at least 50 volume percent.
Claim 10
Dependent Claim
19 words
Method according to claim 2, which comprises diluting the adhesive with approximately 10 volume percent of an organic solvent.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-28 | 1987-05-30 | 1987-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-28 | 1991-05-30 | 1991-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-28 | 1995-05-30 | 1995-11-29 | $7700.00 | Window Closed / Lapsed |