US4417263A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Seiko Instruments Inc
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Filing: 1981-01-16
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Granted: 1983-11-22
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Expires: 2001-01-16
Abstract
Abstract A semiconductor device for generating a constant voltage and comprised of a pair of MOS field effect transistors of the same conductivity type connected in series. A first of the transistors is a depletion type and has a gate connected to its source and its source connected to its substrate so as to operate as an active device. The second transistor has a gate connected to its drain and a source connected to its substrate. When a supply voltage is applied across the series combination of the first and second transistors, a constant voltage is developed at the connection node between the first and second transistors.
Inventors
- 👤 Yoshiaki Matsuura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:15
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/84; G; G04; G04G; G04G19/00; G04G19/02; G04G19/06; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/245; G05F3/247
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
147 words
A semiconductor device, comprising: a depletion type MOS field effect first transistor comprised of a substrate having formed thereon a gate, a source and a drain of said first transistor, wherein said first transistor gate is connected to said first transistor source and said first transistor source is connected to said first transistor substrate; a MOS field effect second transistor having the same conductivity type as said first transistor and comprised of a substrate having formed thereon a gate, a source and a drain of said second transistor, wherein said second transistor gate is connected to said second transistor drain and said transistor source is connected to said second transistor substrate; and said first and said second transistors are connected with their respective source-drain channels in series, and a respective one of the source and drain of said second transistor defining a power terminal of the device.
Claim 2
Dependent Claim
147 words
A semiconductor device, comprising: a depletion type MOS field effect first transistor comprised of a substrate having formed thereon a gate, a source and a drain of said first transistor, wherein said first transistor gate is connected to said first transistor source and said first transistor source is connected to said first transistor substrate; a MOS field effect second transistor having the same conductivity type as said first transistor and comprised of a substrate having formed thereon a gate, a source and a drain of said second transistor, wherein said second transistor gate is connected to said second transistor drain and said transistor source is connected to said second transistor substrate; and said first and said second transistors are connected with their respective source-drain channels in series, and a respective one of the source and drain of said second transistor defining a power terminal of the device.
Claim 3
Dependent Claim
124 words
A semiconductor device according to claim 1, further comprising: a MOS field effect third transistor having the same conductivity type as said first transistor and comprised of a substrate having formed thereon a gate, a source and a drain of said third transistor, wherein said third transistor gate is connected to said third transistor drain and said third transistor source is connected to said third transistor substrate; and said first, said second and said third transistor are connected with their respective source-drain channels in series, with a respective one of the source and drain of said third transistor connected to said first transistor and with the other of the source and drain of said third transistor defining a second power terminal of the device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-21 | 1987-05-23 | 1987-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-21 | 1991-05-23 | 1991-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-21 | 1995-05-23 | 1995-11-22 | $7700.00 | Window Closed / Lapsed |