US4346344A
Expired / Lapsed
US
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Stable field effect transistor voltage reference
Assignee: Signetics Corp
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Filing: 1979-02-08
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Granted: 1982-08-24
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Expires: 1999-02-08
Abstract
Abstract A temperature stable voltage reference utilizes an enhancement field effect transistor and a depletion field effect transistor each connected in series with a current source. A differential amplifier has its input terminals separately connected between each of the field effect transistors and their respective current supplies. An input terminal of the field effect transistor is utilized as the reference voltage and is also connected to the gate of one of the field effect transistors, the gate of the other field effect transistor being connected to a reference potential.
Inventors
- 👤 Robert A. Blauschild
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:19
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/245; G05F3/247; H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/84; Y; Y10; Y10S; Y10S323/00; Y10S323/907
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
173 words
A stable voltage reference comprising an enhancement field effect transistor, a depletion field effect transistor, a separate means connected in series with the drain-source terminals of each of said field effect transistors for limiting the flow of current therethrough, a differential amplifier provided with a first input connected between the enhancement field effect transistor and the current limiting means connected thereto and provided with a second input connected between the depletion field effect transistor and the current limiting means connected thereto, means connecting the gate of one of said field effect transistors to a reference potential, and means connecting the output of said differential amplifier to the gate of the other of said field effect transistors, said depletion field effect transistor being provided with a depletion implant sufficient to generate a difference in gate-source voltages between said field effect transistors under identical drain-source current conditions, and the geometric ratios of the width of the channels and the length of the gates of said field effect transistors being sufficient to substantially eliminate temperature drift.
Claim 2
Dependent Claim
173 words
A stable voltage reference comprising an enhancement field effect transistor, a depletion field effect transistor, a separate means connected in series with the drain-source terminals of each of said field effect transistors for limiting the flow of current therethrough, a differential amplifier provided with a first input connected between the enhancement field effect transistor and the current limiting means connected thereto and provided with a second input connected between the depletion field effect transistor and the current limiting means connected thereto, means connecting the gate of one of said field effect transistors to a reference potential, and means connecting the output of said differential amplifier to the gate of the other of said field effect transistors, said depletion field effect transistor being provided with a depletion implant sufficient to generate a difference in gate-source voltages between said field effect transistors under identical drain-source current conditions, and the geometric ratios of the width of the channels and the length of the gates of said field effect transistors being sufficient to substantially eliminate temperature drift.
Claim 3
Dependent Claim
22 words
A stable voltage reference as recited in claim 1, wherein each of said current flow limiting means comprises a constant current source.
Claim 4
Dependent Claim
22 words
A stable voltage reference as recited in claim 2 wherein both of the constant current sources are substantially identical field effect transistors.
Claim 5
Dependent Claim
82 words
A stable voltage reference as recited in claim 1, wherein the ratio of the width of the channel to the length of the gate of said depletion mode field effect transistor is approximately equal to the ratio of the width of the channel to the length of the gate of the enhancement mode field effect transistor multiplied by U E /U D where U is equal to the channel mobility and E and D refer to the enhancement and depletion parameters respectively.
Claim 6
Dependent Claim
124 words
A stable reference as recited in claim 3, wherein the ratio of the width of the channel to the length of the gate of the depletion mode field effect transistor is equal to the ratio of the width of the channel to the length of gate of the corresponding constant current source field effect transistor multiplied by the square of the inverse of ##EQU5## where K is equal to a process constant multiplied by the ratio of the channel width to gate length of the device, U is equal to the channel mobility, α is a constant that depends on substrate dopent density and on the implant dosages used during processing, and E and D refer to the enchancement and depletion device parameters respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-23 | 1986-02-22 | 1986-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-23 | 1990-02-22 | 1990-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-23 | 1994-02-22 | 1994-08-24 | $7700.00 | Window Closed / Lapsed |