Patent US4416052A successfully refreshed from Google Patents.
US4416052A
Expired / Lapsed
US
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Method of making a thin-film solar cell
Assignee: Lockheed Martin Corp
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Filing: 1982-03-29
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Granted: 1983-11-22
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Expires: 2002-03-29
Abstract
Abstract A method of making a thin gallium arsenide solar cell having a reflecting back surface and coplanar electrical contacts. A photovoltaic cell comprising gallium arsenide is produced in a self-supporting thickness by conventional methods. A pattern of contact lines and a bus contact are formed on the front surface of the cell and a transparent coverslide is bonded thereover. The back of the cell is chemically etched away until the minimum effective thickness is reached, then etching in the bus contact region is continued until the bus is exposed. Any stop-etch material used to prevent excessive etching of the cell material is removed and a reflective contact material is applied to the back of the cell. The resulting solar cell is light in weight and both front and back connections can be made from the back of the cell, making it particularly suitable for use in space-based arrays.
Inventors
- 👤 Theodore G. Stern
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:56
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F77/40; H10F77/42; H10F77/488; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/544
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
138 words
A method of forming a thin gallium arsenide solar cell of improved efficiency, which comprises the steps of: providing a self-supporting photovoltaic cell comprising gallium arsenide having a thickness of at least about 250 micrometers; forming a pattern of contact lines across the front surface of said photovoltaic cell and a bus bar contact along one edge of said front surface; bonding a thin visible-light transparent coverslide to said front surface; initially etching the back surface of said photovoltaic cell to uniformly reduce the thickness of said photovoltaic cell to a minimum useful thickness; applying a stop-etch material to said back surface except in the area corresponding to said bus; further etching said back surface down to said bus; removing said stop-etch material, and applying a light reflective electrically conductive material to the surface protected by said stop-etch.
Claim 2
Independent Claim
138 words
A method of forming a thin gallium arsenide solar cell of improved efficiency, which comprises the steps of: providing a self-supporting photovoltaic cell comprising gallium arsenide having a thickness of at least about 250 micrometers; forming a pattern of contact lines across the front surface of said photovoltaic cell and a bus bar contact along one edge of said front surface; bonding a thin visible-light transparent coverslide to said front surface; initially etching the back surface of said photovoltaic cell to uniformly reduce the thickness of said photovoltaic cell to a minimum useful thickness; applying a stop-etch material to said back surface except in the area corresponding to said bus; further etching said back surface down to said bus; removing said stop-etch material, and applying a light reflective electrically conductive material to the surface protected by said stop-etch.
Claim 3
Independent Claim
192 words
A method of forming a thin gallium arsenide solar cell of improved efficiency, which comprises the steps of: providing a self-supporting photovoltaic cell having a thickness of at least about 250 nanometers comprising a substrate layer of Al 0 .2 GaAs, a stop-etch layer of Al 0 .9 GaAs extending uniformly over the front surface of said first layer except for an edge area along one edge of said first layer, a layer of GaAs including oppositely doped regions forming a junction therebetween, and a second layer of Al 0 .2 GaAs extending entirely over said stop-etch layer and said edge area; forming a pattern of contact lines across the outer surface of said second layer and a bus bar contact along one edge of said second layer corresponding to said edge area; bonding a thin visible-light transparent coverslide to said outer surface; etching the back surface of said substrate layer up to the stop-etch layer and up to the bus in said edge area not protected by said stop-etch layer; removing said stop-etch; and applying a light reflective electrically conductive material to the surface previously covered by said stop etch layer.
Claim 4
Independent Claim
192 words
A method of forming a thin gallium arsenide solar cell of improved efficiency, which comprises the steps of: providing a self-supporting photovoltaic cell having a thickness of at least about 250 nanometers comprising a substrate layer of Al 0 .2 GaAs, a stop-etch layer of Al 0 .9 GaAs extending uniformly over the front surface of said first layer except for an edge area along one edge of said first layer, a layer of GaAs including oppositely doped regions forming a junction therebetween, and a second layer of Al 0 .2 GaAs extending entirely over said stop-etch layer and said edge area; forming a pattern of contact lines across the outer surface of said second layer and a bus bar contact along one edge of said second layer corresponding to said edge area; bonding a thin visible-light transparent coverslide to said outer surface; etching the back surface of said substrate layer up to the stop-etch layer and up to the bus in said edge area not protected by said stop-etch layer; removing said stop-etch; and applying a light reflective electrically conductive material to the surface previously covered by said stop etch layer.
Claim 5
Dependent Claim
15 words
The method according to claim 1 wherein said photovoltaic cell comprises Al 0 .2 GaAs.
Claim 6
Dependent Claim
59 words
The method according to claim 1 wherein said front surface contact pattern comprises a plurality of substantially parallel lines about 8 microns wide, spaced about 135 microns apart, and connected to a bus bar contact having an area of about 0.177 by 0.065 cm, said pattern and said bus bar comprising gold and having thicknesses of about 2 microns.
Claim 7
Dependent Claim
19 words
The method according to claim 1 or 2 wherein said photovoltaic cell is formed by organometallic chemical vapor deposition.
Claim 8
Dependent Claim
35 words
The method according to claim 1 or 2 wherein said coverslide has a thickness of from about 25 to 100 microns and said photovoltaic cell has a thickness of from about 5 to 25 microns.
Claim 9
Dependent Claim
36 words
The method according to claim 1 or 2 wherein said photovoltaic cell includes a single layer Si 3 N 4 anti-reflection coating having a thickness of about 60 nanometers located between the solar cell and coverslide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-21 | 1987-05-23 | 1987-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-21 | 1991-05-23 | 1991-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-21 | 1995-05-23 | 1995-11-22 | $7700.00 | Window Closed / Lapsed |