Patent US4414040A successfully refreshed from Google Patents.
US4414040A
Expired / Lapsed
US
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Passivation of mercury cadmium telluride semiconductor surfaces by ozone oxidation
Assignee: Raytheon Co
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Filing: 1981-08-20
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Granted: 1983-11-08
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Expires: 2001-08-20
Abstract
Abstract A process is provided for forming the native oxide on a semiconductor surface comprising Hg1-xCdxTe, where x ranges from 0 to 1. The process comprises exposing the semiconductor surfce to a mixture of ozone and oxygen containing an effective amount of ozone sufficient to form a native oxide thereon. The desired amount of ozone is conveniently obtained by passing oxygen from a source through an ozone generator provided with a source of high voltage.
Inventors
- 👤 Robert E. Kvaas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:56
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/80; C04B41/81; C04B41/85; C23; C23C; C23C8/00; C23C8/06; C23C8/08; C23C8/10; C23C8/12; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
61 words
A process for forming a native oxide on a semiconductor surface comprising Hg 1-x Cd x Te, where x ranges from 0 to 1, which comprises exposing the semiconductor surface to a substantially water-free mixture of ozone and oxygen containing at least about 0.3 vol/vol percent ozone, said process carried out at a temperature within about ±10° C. of ambient temperature.
Claim 2
Dependent Claim
61 words
A process for forming a native oxide on a semiconductor surface comprising Hg 1-x Cd x Te, where x ranges from 0 to 1, which comprises exposing the semiconductor surface to a substantially water-free mixture of ozone and oxygen containing at least about 0.3 vol/vol percent ozone, said process carried out at a temperature within about ±10° C. of ambient temperature.
Claim 3
Dependent Claim
14 words
The process of claim 1 in which x ranges from about 0.15 to 0.4.
Claim 4
Dependent Claim
18 words
The process of claim 1 in which the ozone concentration ranges from about 0.3 to 3 vol/vol percent.
Claim 5
Dependent Claim
18 words
The process of claim 3 in which the ozone concentration ranges from about 1 to 2 vol/vol percent.
Claim 6
Dependent Claim
10 words
The process of claim 1 carried out at ambient temperature.
Claim 7
Dependent Claim
26 words
The process of claim 1 in which the semiconductor surface is exposed to the ozone/oxygen mixture for a period of time of least about 15 minutes.
Claim 8
Dependent Claim
15 words
The process of claim 6 in which the period of time is about 90 minutes.
References Cited (Backward Citations)
US4176206A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-07 | 1987-05-09 | 1987-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-07 | 1991-05-09 | 1991-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-07 | 1995-05-09 | 1995-11-08 | $7700.00 | Window Closed / Lapsed |