US4413329A
Expired / Lapsed
US
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Dynamic memory cell
Assignee: International Business Machines Corp
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Filing: 1982-09-16
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Granted: 1983-11-01
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Expires: 2002-09-16
Abstract
Abstract A dynamic memory cell is disclosed which provides means for rewriting the cell after reading without discharging the bit line driver to thereby improve cycle time. The cell includes an independently operated device to access the capacitive storage node to discharge the node of any charge thereon after the reading of a low or no charge bit on the capacitive storage node.
Inventors
- 👤 Endre P. Thoma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:58
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4094
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
183 words
In a memory system comprising a plurality of dynamic memory cells, and wherein each cell comprises a switchable cell device and a capacitive node, and wherein said switchable cell device is connected to a bit line to read the charge stored at said node and to a first word line to selectively switch said cell device responsive to a first signal in said word line, and wherein the system includes a sense amplifier to sense the read charge on said bit line, the improvement which comprises, a cell write device, said cell write device being connected to a write line and to said storage node and also connected to a second word line to selectively switch said cell write device responsive to a second signal in said second word line, and means to selectively connect said write line to a low voltage value responsive to a sensed low charge at said capacitive node, whereby a sensed low charge in said cell is rewritten independently of said bit line and a high charge in said cell is rewritten by said bit line upon reading.
Claim 2
Dependent Claim
183 words
In a memory system comprising a plurality of dynamic memory cells, and wherein each cell comprises a switchable cell device and a capacitive node, and wherein said switchable cell device is connected to a bit line to read the charge stored at said node and to a first word line to selectively switch said cell device responsive to a first signal in said word line, and wherein the system includes a sense amplifier to sense the read charge on said bit line, the improvement which comprises, a cell write device, said cell write device being connected to a write line and to said storage node and also connected to a second word line to selectively switch said cell write device responsive to a second signal in said second word line, and means to selectively connect said write line to a low voltage value responsive to a sensed low charge at said capacitive node, whereby a sensed low charge in said cell is rewritten independently of said bit line and a high charge in said cell is rewritten by said bit line upon reading.
Claim 3
Dependent Claim
47 words
The invention as defined in claim 1 wherein said means to selectively connect said write line to low voltage includes a second device connected in series with said cell write device, and means to selectively turn both devices on at the same time to discharge said node.
Claim 4
Dependent Claim
21 words
The invention as defined in claim 2 wherein said second device is operable by said sense amplifier sensing a low voltage.
Claim 5
Dependent Claim
21 words
The invention as defined in claim 3 wherein the cell write device is pulsed subsequently to a reading of a node.
Claim 6
Dependent Claim
29 words
The invention as defined in claim 1 further characterized by isolation means connected to isolate the sense amplifier from said cell after the capacitive node charge has been sensed.
Claim 7
Dependent Claim
16 words
The invention as defined in claim 5 wherein said isolation means includes a series connected device.
Claim 8
Dependent Claim
32 words
The invention as defined in claim 6 wherein said series connected device is normally on and means to switch said device off after the capacitive charge is sensed by said sense amplifier.
Claim 9
Dependent Claim
14 words
The invention as defined in claim 1 wherein said devices are field effect transistors.
Claim 10
Dependent Claim
160 words
In a memory system comprising a plurality of dynamic memory cells, and wherein each cell comprises a selectable cell device and a capacitive node, and wherein said cell device is connected to a bit line to read the charge stored at said node and to a first word line to selectively select said cell device responsive to a first signal in said word line, and wherein the system includes a sense amplifier to sense the read charge on said bit line, the improvement which comprises, cell write means independent of said bit line, said cell write means being connected between a write line and said storage node, and means to selectively connect said write line to a predetermined voltage value responsive to a sensed low charge at said capacitive node, whereby a sensed low charge in said cell is rewritten independently of said bit line and a high charge in said cell is rewritten by said bit line upon reading.
Claim 11
Dependent Claim
160 words
In a memory system comprising a plurality of dynamic memory cells, and wherein each cell comprises a selectable cell device and a capacitive node, and wherein said cell device is connected to a bit line to read the charge stored at said node and to a first word line to selectively select said cell device responsive to a first signal in said word line, and wherein the system includes a sense amplifier to sense the read charge on said bit line, the improvement which comprises, cell write means independent of said bit line, said cell write means being connected between a write line and said storage node, and means to selectively connect said write line to a predetermined voltage value responsive to a sensed low charge at said capacitive node, whereby a sensed low charge in said cell is rewritten independently of said bit line and a high charge in said cell is rewritten by said bit line upon reading.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-31 | 1987-05-02 | 1987-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-31 | 1991-05-02 | 1991-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-31 | 1995-05-02 | 1995-11-01 | $7700.00 | Window Closed / Lapsed |