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US4410833A
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Solid state magnetron
Assignee: United States Department of the Navy
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Filing: 1981-06-02
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Granted: 1983-10-18
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Expires: 2001-06-02
Abstract
Abstract A magnetron in which the space between the anode and cathode contains a high mobility semiconductor. The structure is non-cylindrically symmetric because the anode and cathode are placed on top of the semiconductor. The electrons are injected into the substrate and then accelerated toward the anode members where they are extracted. Alternate anode members are strapped together to favor excitation of the pi -mode.
Inventors
- 👤 Achintya K. Ganguly
- 👤 Denis C. Webb
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:15
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/143; H01; H01J; H01J25/00; H01J25/50; H01J25/52; H01J25/58; H01J25/587
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
77 words
A planar solid-state magnetron comprising: a plate whose body is formed from a semiconductor material and whose top surface is partially coated with a conducting film, the partial conducting film coating including a cathode and a plurality of anode members radially spaced from the cathode, adjacent anode members together with the space therebetween defining resonant cavities; and means for directing electrons from the cathode to the anode by electrical conduction through the semiconductor body of the plate.
Claim 2
Dependent Claim
77 words
A planar solid-state magnetron comprising: a plate whose body is formed from a semiconductor material and whose top surface is partially coated with a conducting film, the partial conducting film coating including a cathode and a plurality of anode members radially spaced from the cathode, adjacent anode members together with the space therebetween defining resonant cavities; and means for directing electrons from the cathode to the anode by electrical conduction through the semiconductor body of the plate.
Claim 3
Dependent Claim
36 words
The planar solid-state magnetron recited in claim 1 wherein the electron-directing means includes: a pair of leads attached respectively to the anode and cathode, whereby an external potential can be applied between the cathode and anode.
Claim 4
Dependent Claim
33 words
The planar solid-state magnetron recited in claim 1 wherein the electron-directing means includes: a pair of magnetic pole pieces for producing a magnetic field across the interaction space between the cathode and anode.
Claim 5
Dependent Claim
25 words
The planar solid-state magnetron recited in claim 1 including: `means for favoring operation of the magnetron in the π-mode without the interference of spurious modes.
Claim 6
Dependent Claim
25 words
The planar solid-state magnetron recited in claim 4 wherein the π-mode operation favoring means includes: a pair of conducting straps connected to alternate anode members.
Claim 7
Dependent Claim
24 words
The planar solid-state magnetron recited in claim 1 including: means for coupling out electrical power contained in electromagnetic oscillations produced in the resonant cavities.
Claim 8
Dependent Claim
20 words
The planar solid-state magnetron recited in claim 6 wherein the output power coupling means includes: a waveguide surrounding the plate.
Claim 9
Dependent Claim
15 words
The planar solid-state magnetron recited in claim 1 wherein: the semiconductor has a high mobility.
Claim 10
Dependent Claim
13 words
The planar solid-state magnetron recited in claim 1 wherein: the semiconductor is InSb.
Claim 11
Dependent Claim
16 words
The planar solid-state magnetron recited in claim 1 wherein: the semiconductor is a GaAs-(AlGa) As superlattice.
Claim 12
Dependent Claim
65 words
A planar solid-state magnetron comprising: a plate whose body is formed from a semiconductor and whose top surface is partially coated with a conducting film, the partial conducting film coating forming at least one cavity resonator and including a cathode and an anode spaced from the cathode; and means for directing electrons from the cathode to the anode by electrical conduction through the semiconductor body.
Claim 13
Dependent Claim
65 words
A planar solid-state magnetron comprising: a plate whose body is formed from a semiconductor and whose top surface is partially coated with a conducting film, the partial conducting film coating forming at least one cavity resonator and including a cathode and an anode spaced from the cathode; and means for directing electrons from the cathode to the anode by electrical conduction through the semiconductor body.
Claim 14
Dependent Claim
36 words
The planar solid-state magnetron recited in claim 11 wherein the electron-directing means includes: a pair of leads attached respectively to the anode and cathode, whereby an external potential can be applied between the cathode and anode.
Claim 15
Dependent Claim
33 words
The planar solid-state magnetron recited in claim 11 wherein the electron-directing means includes: a pair of magnetic pole pieces for producing a magnetic field across the interaction space between the cathode and anode.
Claim 16
Dependent Claim
24 words
The planar solid-state magnetron recited in claim 11, including: means for coupling out electrical power contained in electromagnetic oscillations produced in the cavity resonator.
Claim 17
Dependent Claim
20 words
The planar solid-state magnetron recited in claim 14 wherein the output power coupling means includes: `a waveguide surrounding the plate.
Claim 18
Dependent Claim
15 words
The planar solid-state magnetron recited in claim 11, wherein: the semiconductor has a high mobility.
Claim 19
Dependent Claim
13 words
The planar solid-state magnetron recited in claim 11, wherein: the semiconductor is InSb.
Claim 20
Dependent Claim
16 words
The planar solid-state magnetron recited in claim 11 wherein: the semiconductor is a GaAs-(AlGa) As superlattice.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-17 | 1987-04-18 | 1987-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-17 | 1991-04-18 | 1991-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-17 | 1995-04-18 | 1995-10-18 | $7700.00 | Window Closed / Lapsed |