Abstract A semiconductor memory is provided with a hook structure composed of first to fourth regions and is capable of non-destructive readout. The third and fourth regions of the hook structure are both made floating and each form one of main electrode regions of each of a write and/or refresh transistor and a readout transistor. Carriers which are injected from the other main electrode region of the write transistor are stored as excess majority carriers in the third region and majority carriers of the fourth region flow out therefrom into the first region via the third and second regions, in consequence of which the fourth region lacks in the majority carrier and voltages of the floating third and fourth regions vary. The voltage variation of the fourth region is read out by the readout transistor. The excess majority carriers stored in the third region flow out therefrom into the other main electrode region of the write transistor and become extinct when it operates as a refresh transistor.
A semiconductor memory which is provided with a memory cell comprising; a hook structure composed of a first region of a first conductivity type, a second region of said first conductivity type, a third region of a second conductivity type reverse from the first conductivity type and a fourth region of said first conductivity type, the first to fourth regions being sequentially formed on a semiconductor substrate and the third and fourth regions being made floating; a write and/or refresh transistor using the third region of the hook structure as one of its main electrode regions; and a readout transistor using the fourth region of the hook structure as one of its main electrode regions.
Claim 2
Dependent Claim
115 words
A semiconductor memory which is provided with a memory cell comprising; a hook structure composed of a first region of a first conductivity type, a second region of said first conductivity type, a third region of a second conductivity type reverse from the first conductivity type and a fourth region of said first conductivity type, the first to fourth regions being sequentially formed on a semiconductor substrate and the third and fourth regions being made floating; a write and/or refresh transistor using the third region of the hook structure as one of its main electrode regions; and a readout transistor using the fourth region of the hook structure as one of its main electrode regions.
Claim 3
Dependent Claim
26 words
A semiconductor memory according to claim 1 wherein the fourth region of the hook structure contains an impurity of higher concentration than does the third region.
Claim 4
Dependent Claim
37 words
A semiconductor memory according to claim 2 wherein the fourth region of the hook structure has such an impurity concentration distribution that the impurity concentration increases as the distance from the interface with the thid region increases.
Claim 5
Dependent Claim
37 words
A semiconductor memory according to claim 2 wherein the third region of the hook structure has such an impurity concentration distribution that the impurity concentration decreases as the distance from the interface with the fourth region increases.
Claim 6
Dependent Claim
25 words
A semiconductor memory according to claim 1 wherein a plurality of such cells are arranged in the form of an array in a single substrate.
Claim 7
Dependent Claim
15 words
A semiconductor memory according to claim 1 wherein the first region is the semiconductor substrate.