Directly-coupled and capacitively coupled nonvolatile static RAM cell

Claim 2

A nonvolatile static random access memory cell comprising: cross-coupled transistor means having first and second nodes which are maintained at complementary logic states for volatile data storage; at least one tunnel capacitor means, each said tunnel capacitor means connected to a corresponding floating node and operatively coupled to the gate and drain terminals of one of said cross-coupled transistor means; at least one switch transistor means, each said switch transistor means operatively coupled to one of said first and second nodes and to the floating node of one of said at least one tunnel capacitor means; and means for coupling each of said switch transistor means to a first power terminal for said memory cell, said at least one tunnel capacitor means charged for nonvolatile data storage wherein volatile data is stored in said cross-coupled transistor means, said means for coupling operatively coactive with said at least one switch transistor means for recalling nonvolatile stored data in its true state to said cross-coupled transistor means.

Claim 3

The device of claim 1, wherein there are provided two transistors in said cross-coupled transistor means, two tunnel capacitor means, and first and second switch transistor means, and including a capacitor member connected in series between each of said floating nodes and one of said first and second nodes and a resistor connected between each of said first and second nodes and said first power terminal of said memory cell.

Claim 4

The device of claim 2, wherein said means for coupling is comprised of first and second coupling capacitive means operatively connected, respectively, to said first and second switch transistor means.

Claim 5

The device of claim 3 wherein said first and second coupling capacitive means are first and second capacitors.

Claim 6

The device of claim 4 wherein said first and second coupling capacitors are operatively connected, respectively, between said first and second switch transistor means and said first power terminal.

Claim 7

The device of claim 4 wherein said first and second coupling capacitors are operatively connected, respectively, between said first and second switch transistor means and a second power terminal.

Claim 8

The device of claim 3 wherein said first and second coupling capacitive means are first and second diodes connected between said first and second switch transistor means and a substrate of said memory cell.

Claim 9

The device of claim 2, wherein said means for coupling is comprised of a series addressing transistor means controlled by a recall signal line, interposed between said first and second switch transistor means and one power terminals of said memory cell.

Claim 10

The device of claim 2, wherein said means for coupling is comprised of internal latchout means coupled between said at least one switch transistor means and one of said first and second nodes.

Claim 11

A nonvolatile static random access memory cell, comprising: first and second cross-coupled driver transistors having first and second stable states, said first driver transistor having the drain and source terminals thereof connected between a first node and a first power terminal and said second driver transistor having the drain and source terminals thereof connected between a second node and said first power terminal; first and second switching transistors, said first switching transistor having the drain and source terminals thereof operatively connected between said first node and a power terminal and said second switching transistor having the drain and source terminals thereof operatively connected between said second node and a power source to which said first floating gate switching transistor is connected; first and second tunneling capacitors and first and second capacitors, said first tunneling capacitor and said first capacitor connected in series between the gate and drain of said first driver transistor and having a first floating node therebetween and said second tunneling capacitor and said second capacitor connected in series between the gate and drain of said second driver transistor and having a second floating node therebetween, the gate terminal of one of said first and second switching transistors connected to said first floating node and the other gate terminal of said first and second switching transistors connected to said second floating node; and means for coupling said switching transistors to a power terminal to decouple volatile state and nonvolatile state data storage.

Claim 12

A nonvolatile static random access memory cell, comprising: first and second cross-coupled driver transistors having first and second stable states, said first driver transistor having the drain and source terminals thereof connected between a first node and a first power terminal and said second driver transistor having the drain and source terminals thereof connected between a second node and said first power terminal; first and second switching transistors, said first switching transistor having the drain and source terminals thereof operatively connected between said first node and a power terminal and said second switching transistor having the drain and source terminals thereof operatively connected between said second node and a power source to which said first floating gate switching transistor is connected; first and second tunneling capacitors and first and second capacitors, said first tunneling capacitor and said first capacitor connected in series between the gate and drain of said first driver transistor and having a first floating node therebetween and said second tunneling capacitor and said second capacitor connected in series between the gate and drain of said second driver transistor and having a second floating node therebetween, the gate terminal of one of said first and second switching transistors connected to said first floating node and the other gate terminal of said first and second switching transistors connected to said second floating node; and means for coupling said switching transistors to a power terminal to decouple volatile state and nonvolatile state data storage.

Claim 13

The device of claim 10 wherein the power terminal to which said first and second switching transistors are operatively connected is a common substrate terminal.

Claim 14

The device of claim 10, wherein the power terminal to which said first and second switching transistors are operatively connected is a first power terminal and wherein a second power terminal is operatively connected through impedance means to said first and second nodes.

Claim 15

The device of claim 10 wherein said means for coupling is first and second capacitors interposed between each of said first and second switching transistors and a power terminal.

Claim 16

The device of claim 10 wherein said means for coupling is at least one series addressing transistor controlled by a recall signal line and operatively coupled between said switching transistors and a power terminal.

Claim 17

The device of claim 10 wherein said means for coupling includes an internal latchout means.