US4407059A
Expired / Lapsed
US
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Method of producing semiconductor device
Assignee: Toshiba Corp
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Filing: 1981-08-20
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Granted: 1983-10-04
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Expires: 2001-08-20
Abstract
Abstract Disclosed is a method of producing a semiconductor device, comprising forming an oxidation-resistive insulating film having one or more openings on a semiconductor substrate, forming an impurity-doped polysilicon pattern in at least the opening of the insulating film by using a mask substantially equal in size to the opening, forming a silicon oxide film on the exposed surface of the polysilicon pattern by thermal oxidation, removing the insulating film, and depositing a conductive material and, then, patterning said conductive material layer for forming an interconnection electrode layer insulated from the polysilicon pattern by the silicon oxide film.
Inventors
- 👤 Yoshitaka Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
105 words
A method of producing a semiconductor device, comprising the steps of: forming an oxidation-resistive insulating film having one or more openings on a semiconductor substrate of a first conductivity type; forming an impurity-doped polysilicon pattern in at least the opening of the insulating film by etching using a mask substantially equal in size to the opening; forming a silicon oxide film on the exposed surface of the polysilicon pattern by thermal oxidation; removing the oxidation insulating film; and depositing a conductive material and, then, patterning said conductive material layer for forming an interconnection electrode layer insulated from the polysilicon pattern by the silicon oxide film.
Claim 2
Independent Claim
105 words
A method of producing a semiconductor device, comprising the steps of: forming an oxidation-resistive insulating film having one or more openings on a semiconductor substrate of a first conductivity type; forming an impurity-doped polysilicon pattern in at least the opening of the insulating film by etching using a mask substantially equal in size to the opening; forming a silicon oxide film on the exposed surface of the polysilicon pattern by thermal oxidation; removing the oxidation insulating film; and depositing a conductive material and, then, patterning said conductive material layer for forming an interconnection electrode layer insulated from the polysilicon pattern by the silicon oxide film.
Claim 3
Dependent Claim
18 words
The method according to claim 1, wherein the oxidation-resistive insulating film is formed of silicon nitride or alumina.
Claim 4
Dependent Claim
54 words
The method according to claim 1, wherein the step of forming the impurity-doped polysilicon pattern comprises depositing undoped polysilicon on the entire surface, doping the deposited polysilicon layer with an impurity, and patterning the doped polysilicon layer by photolithography using a mask substantially equal in size to the opening of the oxidation-resistive insulating film.
Claim 5
Dependent Claim
47 words
The method according to claim 1, wherein the step of forming the impurity-doped polysilicon pattern comprises depositing an impurity-doped polysilicon on the entire surface, and patterning the doped polysilicon layer by photolithography using a mask substantially equal in size to the opening of the oxidation-resistive insulating film.
Claim 6
Dependent Claim
34 words
The method according to claim 1, wherein the polysilicon pattern before the thermal oxidation step is covered with a silicon oxide film and said silicon oxide film is covered with a silicon nitride film.
Claim 7
Dependent Claim
65 words
The method according to claim 1, wherein the polysilicon pattern is doped with an impurity of the first conductivity type, at least the major portion of the polysilicon pattern is in direct contact with the semiconductor substrate, and the impurity contained in the polysilicon pattern is thermally diffused into the substrate surface region so as to form a semiconductor region of the first conductivity type.
Claim 8
Dependent Claim
17 words
The method according to claim 6, wherein the impurity diffusion is performed in the thermal oxidation step.
Claim 9
Independent Claim
48 words
The method according to any one of claims 1 to 7, wherein an impurity of a second conductivity type is introduced into the semiconductor substrate so as to form at least one semiconductor region of the second conductivity type before the step of forming the oxidation-resistive insulating film.
Claim 10
Independent Claim
59 words
The method according to any one of claims 1 to 7, wherein the thermal oxidation step is followed by an additional step of introducing an impurity of the second conductivity type into the substrate surface region by using the silicon oxide film as the mask so as to form a plurality of semiconductor regions of the second conductivity type.
Claim 11
Dependent Claim
26 words
The method according to claim 9, wherein the additional step of introducing the second conductivity type impurity precedes the step of removing the oxidation-resistive insulating film.
Claim 12
Dependent Claim
26 words
The method according to claim 9, wherein the additional step of introducing the second conductivity type impurity follows the step of removing the oxidation-resistive insulating film.
Claim 13
Dependent Claim
51 words
The method according to claim 8, which further comprises the step of introducing the second conductivity type impurity into the substrate surface region, after the thermal oxidation step, with the silicon oxide film used as the mask so as to form a plurality of semiconductor regions of the second conductivity type.
Claim 14
Independent Claim
100 words
The method according to any one of claims 1 to 5, which further comprises the steps of forming an oxide film on the surface of the semiconductor substrate in the opening of the insulating film before forming the impurity-doped polysilicon pattern, introducing an impurity of the second conductivity type into the substrate surface region, after the thermal oxidation step, with the impurity doped polysilicon pattern used as the mask, so as to form a plurality of semiconductor regions of the second conductivity type, and forming an opening in the oxide film on the polysilicon pattern before depositing the conductive material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-03 | 1987-04-04 | 1987-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-03 | 1991-04-04 | 1991-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-03 | 1995-04-04 | 1995-10-04 | $7700.00 | Window Closed / Lapsed |