Patent US4405915A successfully refreshed from Google Patents.
US4405915A
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US
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Photoelectric transducing element
Assignee: Canon Inc
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Filing: 1981-03-23
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Granted: 1983-09-20
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Expires: 2001-03-23
Abstract
Abstract A photoelectric transducing element comprising (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon atom as a matrix and hydrogen atom, or halogen atom, or both, at a ratio of 1 to 30 atomic % with respect to said silicon atom; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.
Inventors
- 👤 Toshiyuki Komatsu
- 👤 Masaki Fukaya
- 👤 Shunichi Uzawa
- 👤 Seishiro Yoshioka
- 👤 Yoshiaki Shirato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:13
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
118 words
A photoelectric transducing element comprising: (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon as a matrix and at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic % with respect to said silicon; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.
Claim 2
Dependent Claim
118 words
A photoelectric transducing element comprising: (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon as a matrix and at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic % with respect to said silicon; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.
Claim 3
Dependent Claim
63 words
The photoelectric transducing element according to claim 1, wherein said first contact layer is composed of an amorphous material containing silicon as a matrix; at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic %; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 4
Dependent Claim
64 words
The photoelectric transducing element according to claim 1, wherein said second contact layer is composed of an amorphous material consisting of silicon as a matrix; at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic %; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 5
Dependent Claim
25 words
The photoelectric transducing element according to claim 2, wherein the content of said impurity ranges from 100 to 5,000 ppm with respect to said silicon.
Claim 6
Dependent Claim
25 words
The photoelectric transducing element according to claim 3, wherein the content of said impurity ranges from 100 to 5,000 ppm with respect to said silicon.
Claim 7
Dependent Claim
37 words
The photoelectric transducing element according to claim 1, wherein one of said contact layers constitutes a layer at a side of the element where light information is received, said one layer having a thickness of 500 angstroms.
Claim 8
Dependent Claim
30 words
The photoelectric transducing element according to claim 1, wherein one of said first and second electrodes includes a plurality of image element electrodes which are isolated to define image elements.
Claim 9
Dependent Claim
29 words
The photoelectric transducing element according to claim 7, wherein the contact layer associated with said image element electrodes is electrically disconnected at least between mutually adjacent image element electrodes.
Claim 10
Dependent Claim
19 words
The photoelectric transducing element according to claim 7, wherein an insulative film is interposed between said image element electrodes.
Claim 11
Dependent Claim
116 words
A photoelectric transducer comprising: (a) a common electrode; (b) a plurality of image element electrodes disposed in confrontation to said common electrode; (c) a photoconductive layer provided between said common and image electrodes, and composed of an amorphous material containing silicon as a matrix, and at least one member selected from the group of hydrogen and halogen at a ratio 1 to 30 atomic % with respect to said silicon; and (d) a contact layer provided between said image element electrodes and said photoconductive layer said contact layer forming an ohmic contact with said image element electrodes with respect to electric charge in at least one polarity, and being non-continuously formed between mutually adjacent image elements.
Claim 12
Dependent Claim
116 words
A photoelectric transducer comprising: (a) a common electrode; (b) a plurality of image element electrodes disposed in confrontation to said common electrode; (c) a photoconductive layer provided between said common and image electrodes, and composed of an amorphous material containing silicon as a matrix, and at least one member selected from the group of hydrogen and halogen at a ratio 1 to 30 atomic % with respect to said silicon; and (d) a contact layer provided between said image element electrodes and said photoconductive layer said contact layer forming an ohmic contact with said image element electrodes with respect to electric charge in at least one polarity, and being non-continuously formed between mutually adjacent image elements.
Claim 13
Dependent Claim
59 words
The photoelectric transducer according to claim 10, wherein said contact layer is composed of an amorphous material containing silicon as a matrix; at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic %; and at least one member selected from the group of phosphorus and arsenic as an impurity.
Claim 14
Dependent Claim
24 words
The photoelectric transducer according to claim 11, wherein the content of said impurity ranges from 100 to 5,000 ppm with respect to said silicon.
Claim 15
Dependent Claim
25 words
The photoelectric transducing element according to claim 1 or 10, wherein a region other than the light receiving section is covered with an insulative coating.
Claim 16
Dependent Claim
134 words
A photoelectric transducing element comprising: (a) a photoconductive layer composed of an amorphous material containing silicon as a matrix, and at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic % with respect to said silicon; (b) first and second contact layers, each being provided independently of the other in contact with said photoconductive layer; (c) first electrode in contact with said first contact layer and forming an ohmic contact with said layer with respect to electric charge in at least one polarity; (d) second electrode in contact with said second contact layer and forming an ohmic contact with said layer with respect to said electric charge in at least one polarity; and (e) a substrate for holding thereon said contact layers and electrodes.
Claim 17
Dependent Claim
134 words
A photoelectric transducing element comprising: (a) a photoconductive layer composed of an amorphous material containing silicon as a matrix, and at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic % with respect to said silicon; (b) first and second contact layers, each being provided independently of the other in contact with said photoconductive layer; (c) first electrode in contact with said first contact layer and forming an ohmic contact with said layer with respect to electric charge in at least one polarity; (d) second electrode in contact with said second contact layer and forming an ohmic contact with said layer with respect to said electric charge in at least one polarity; and (e) a substrate for holding thereon said contact layers and electrodes.
Claim 18
Dependent Claim
65 words
The photoelectric transducing element according to claim 14, wherein said first and second contact layers are composed of an amorphous material containing silicon as a matrix; at least one member selected from the group of hydrogen and halogen at a ratio of 1 to 30 atomic %; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 19
Dependent Claim
24 words
The photoelectric transducing element according to claim 15, wherein content of said impurity ranges from 100 to 5,000 ppm with respect to said silicon.
Claim 20
Dependent Claim
34 words
The photoelectric transducing element according to claim 14, wherein one of said contact layers constitutes a layer at a side where light information is received, said one layer having a thickness of 500 angstroms.
Claim 21
Dependent Claim
30 words
The photoelectric transducing element according to claim 14, wherein one of said first and second electrodes includes a plurality of image element electrodes which are isolated to define image elements.
Claim 22
Dependent Claim
29 words
The photoelectric transducing element according to claim 18, wherein the contact layer associated with said image element electrodes is electrically disconnected at least between mutually adjacent image element electrodes.
Claim 23
Dependent Claim
20 words
The photoelectroc transducing element according to claim 18, wherein an insulative film is interposed between the adjacent image element electrodes.
Claim 24
Dependent Claim
54 words
The photoelectric transducing element according to claim 1, wherein said first contact layer is composed of an amorphous material containing silicon as a matrix; at least one member selected from the group of hydrogen and halogen; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 25
Dependent Claim
53 words
The photoelectric transducing element according to claim 1, wherein said second contact layer is composed of an amorphous material consisting of silicon as a matrix; at least one member selected from the hydrogen and halogen; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 26
Dependent Claim
25 words
The photoelectric transducing element according to claim 1, wherein one of said contact layers constitutes a layer at a side where light information is received.
Claim 27
Dependent Claim
56 words
The photoelectric transducing element according to claim 14, wherein said first and second contact layers are composed of an amorphous material containing silicon as a matrix; at least one member selected from the group of hydrogen and halogen; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 28
Dependent Claim
25 words
The photoelectric transducing element according to claim 14, wherein one of said contact layers constitutes a layer at a side where light information is received.
Claim 29
Dependent Claim
129 words
A photoelectric transducer comprising: (a) a light transmissive substrate; (b) a light transmissive electrode provided on said substrate; (c) a light transmissive contact layer to form an ohmic contact with said light transmissive electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said light transmissive contact layer and comprising an amorphous material containing silicon as a matrix and at least one member selected from the group of hydrogen and halogen; (e) second contact layer provided in contact with said photoconductive layer; (f) a second electrode to form an ohmic contact with said second contact layer with respect to said charge; (g) non-light transmissive layer provided in contact with said light transmissive electrode except where light is to be received.
Claim 30
Dependent Claim
129 words
A photoelectric transducer comprising: (a) a light transmissive substrate; (b) a light transmissive electrode provided on said substrate; (c) a light transmissive contact layer to form an ohmic contact with said light transmissive electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said light transmissive contact layer and comprising an amorphous material containing silicon as a matrix and at least one member selected from the group of hydrogen and halogen; (e) second contact layer provided in contact with said photoconductive layer; (f) a second electrode to form an ohmic contact with said second contact layer with respect to said charge; (g) non-light transmissive layer provided in contact with said light transmissive electrode except where light is to be received.
Claim 31
Dependent Claim
51 words
The photoelectric transducer according to claim 26, wherein said first contact layer comprises an amorphous material containing silicon as a matrix; at least one member selected from the group of hydrogen and halogen; and at least one member selected from the group of phosphorous (P) and arsenic (As), as an impurity.
Claim 32
Dependent Claim
52 words
The photoelectric transducer according to claim 26, wherein said second contact layer comprises an amorphous material consisting of silicon as a matrix; at least one member selected from the group of hydrogen and halogen; and at least one member selected from the group of phosphorous (P) and arsenic (As) as an impurity.
Claim 33
Dependent Claim
24 words
The photoelectric transducer according to claim 27, wherein the content of said impurity ranges from 100 to 5,000 ppm with respect to said silicon.
Claim 34
Dependent Claim
25 words
The photoelectric transducing element according to claim 28, wherein the content of said impurity ranges from 100 to 5,000 ppm with respect to said silicon.
Claim 35
Dependent Claim
24 words
The photoelectric transducer according to claim 26, wherein one of said contact layers constitutes a layer at a side where light information is received.
Claim 36
Dependent Claim
29 words
The photoelectric transducer according to claim 26, wherein one of said first and second electrodes includes a plurality of image element electrodes which are isolated to define image elements.
Claim 37
Dependent Claim
29 words
The photoelectric transducing element according to claim 32, wherein the contact layer associated with said image element electrodes is electrically disconnected at least between mutually adjacent image element electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-09-19 | 1987-03-21 | 1987-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-09-19 | 1991-03-21 | 1991-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-09-19 | 1995-03-21 | 1995-09-20 | $7700.00 | Window Closed / Lapsed |